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Renesas HZS12A1TD-P-E
- Part No.:
- HZS12A1TD-P-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS12A1TD-P-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:70,000
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Product details
Overview
HZS12A1TD-P-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 11.6–12.1 V at 5 mA test current, with dynamic resistance of 9.5 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C - enabling use in compact industrial power rails and reference circuits.
For engineers reviewing the HZS12A1TD-P-E datasheet, HZS12A1TD-P-E pinout, HZS12A1TD-P-E application, or HZS12A1TD-P-E equivalent, this device serves as a stable, low-leakage (≤5 µA at VR = 9.5 V), surface-mount-compatible voltage reference for analog sensing, LDO feedback networks, and overvoltage clamp protection where tight tolerance and thermal stability are required.
Technical Context
The HZS12A1TD-P-E operates as a two-terminal, reverse-biased voltage reference with fixed breakdown behavior governed by controlled doping and planar junction geometry. Its zener voltage is specified at IZ = 5 mA with ±0.5 V tolerance across grade A1, and exhibits a negative temperature coefficient of approximately −0.04 %/°C near 12 V, consistent with mid-voltage Zener devices.
It features low leakage current (IR ≤ 5 µA at VR = 9.5 V), low dynamic impedance (rd = 9.5 Ω at IZ = 5 mA), and is rated for continuous operation up to 200°C junction temperature. The device is optimized for DC-stable regulation rather than transient suppression or high-frequency applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 11.6–12.1 V at IZ = 5 mA - defines precise DC reference level for feedback or clamping |
| Dynamic Resistance (rd) | 9.5 Ω at IZ = 5 mA - ensures minimal output voltage shift under load variation |
| Maximum Power Dissipation (Pd) | 400 mW - supports operation in compact PCB layouts without forced cooling |
| Reverse Leakage Current (IR) | ≤5 µA at VR = 9.5 V - maintains low quiescent error in high-impedance reference nodes |
| Junction Temperature (Tj) | −55 to +200°C - enables deployment in extended-temperature industrial environments |
| Zener Test Current (IZ) | 5 mA - standard bias point for specification compliance and thermal design margining |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), miniature axial-lead package with 2.0 mm diameter and 26.0 mm body length; compatible with 5 mm-pitch automatic insertion equipment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | High-side terminal under reverse bias | Connected to regulated rail or reference node; polarity-sensitive for correct breakdown conduction |
| 2 (Anode) | Low-side terminal under reverse bias | Typically grounded or tied to lower potential; completes current path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 9.5 Ω ensures <12 mV output shift per 1 mA load change - critical for stable feedback loops |
| Wide zener voltage range coverage | Part of HZS Series spanning 1.6–38 V - allows single-supplier sourcing across multiple voltage rails |
| High junction temperature rating | 200°C max Tj supports use in thermally constrained enclosures without derating penalties |
| Low leakage performance | ≤5 µA IR at 9.5 V enables accurate biasing in microamp-level sensor interfaces |
Applications
| Industrial Sensor Reference | LDO Feedback Node |
|---|---|
|
Use Scenario: Providing stable 12 V reference for 4–20 mA current-loop transmitters in factory automation systems. IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to fix reference potential for op-amp-based current source circuitry. Use Value: Tight 11.6–12.1 V tolerance and 9.5 Ω impedance minimize span error and improve long-term calibration stability. |
Use Scenario: Setting output voltage of adjustable linear regulators (e.g., LM317) in embedded control modules. IC Role / Device Role / Timing Role: Precision voltage reference connected between ADJ and OUT pins to define regulated output level. Use Value: Low 5 µA leakage avoids loading error in high-resistance divider networks, preserving setpoint accuracy. |
| Overvoltage Clamp Protection | Analog Front-End Biasing |
|
Use Scenario: Protecting ADC inputs from transient overvoltage in data acquisition units exposed to ESD or inductive kick. IC Role / Device Role / Timing Role: Shunt element that conducts above 12.1 V to limit input swing and safeguard downstream circuitry. Use Value: 400 mW power rating sustains brief 100 ms surges without degradation; 200°C Tj prevents thermal runaway during fault events. |
Use Scenario: Establishing bias point for instrumentation amplifiers in medical-grade signal conditioning stages. IC Role / Device Role / Timing Role: DC reference source for gain-setting resistors and common-mode voltage translation networks. Use Value: Stable −0.04 %/°C tempco reduces drift-induced offset errors across 0–70°C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A (ON Semiconductor) | 12 V nominal, ±5% tolerance (11.4–12.6 V), 20 Ω rd, 1 W Pd, DO-41 package | Higher power, looser tolerance, larger footprint - suited for higher-current clamping but less precise for reference use | Select when >400 mW surge handling is needed and 12.1 V upper limit must not be exceeded |
| BZX84-C12 (Diodes Inc.) | 12 V nominal, ±5% tolerance, 25 Ω rd, 300 mW Pd, SOT-23 package | Surface-mount, lower power, higher impedance - fits space-constrained boards but sacrifices regulation stiffness | Choose for automated assembly on dense PCBs where 9.5 Ω rd is noncritical and thermal mass is limited |
Compared with 1N4742A and BZX84-C12, the HZS12A1TD-P-E offers tighter voltage tolerance (±0.5 V vs. ±0.6 V or ±0.6 V), lower dynamic resistance (9.5 Ω vs. 20–25 Ω), and superior thermal robustness (200°C vs. 175°C), making it optimal for precision industrial references where stability and long-term reliability outweigh raw power handling or miniaturization.
Availability
HZS12A1TD-P-E is available at Aetrix Electronics and suitable for industrial sensor reference, LDO feedback node, and overvoltage clamp protection requiring stable component supply, consistent parametric performance, and traceable manufacturing origin.
Supply support for HZS12A1TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HZS Series was developed as a family of precision silicon planar Zener diodes targeting stable, low-drift voltage references for industrial power management and analog signal conditioning applications.
FAQ
What is the exact zener voltage range specified for HZS12A1TD-P-E?
The HZS12A1TD-P-E has a guaranteed zener voltage range of 11.6 V to 12.1 V when tested at IZ = 5 mA and Ta = 25°C. This A1 grade tolerance (±0.5 V) reflects tighter control than standard ±5% Zeners, supporting applications demanding high initial accuracy without post-manufacturing trimming. The HZS12A1TD-P-E achieves this via process-controlled doping and planar junction design.
Does HZS12A1TD-P-E support surface-mount assembly?
No, the HZS12A1TD-P-E uses the MHD axial-lead package (JEITA code GRZZ0002ZC-A) with 2.0 mm diameter and 26.0 mm body length, designed for through-hole or 5 mm-pitch automatic insertion - not reflow-compatible surface-mount assembly. For SMT alternatives, consider BZX84-C12 or MMBZ5242B, but note differences in rd, Pd, and tempco versus the HZS12A1TD-P-E.
What is the maximum reverse leakage current for HZS12A1TD-P-E?
The HZS12A1TD-P-E specifies a maximum reverse leakage current (IR) of 5 µA at VR = 9.5 V and Ta = 25°C. This low leakage ensures minimal error injection into high-impedance reference nodes - critical for precision LDO feedback dividers or sensor biasing circuits. The HZS12A1TD-P-E maintains this spec across its qualified temperature range due to optimized silicon processing.
Can HZS12A1TD-P-E be used in automotive applications?
The HZS12A1TD-P-E is classified as a "Standard" quality grade device per Renesas documentation and is intended for computers, office equipment, industrial robots, and communications gear - not automotive or safety-critical systems. It lacks AEC-Q200 qualification, and Renesas explicitly excludes transportation equipment from its recommended applications for this part. Use only in non-safety-relevant industrial contexts.
What is the thermal resistance junction-to-ambient for HZS12A1TD-P-E?
The datasheet does not specify a numerical junction-to-ambient thermal resistance (RθJA) for the HZS12A1TD-P-E. Instead, it provides the derating curve in Figure 3: power dissipation drops linearly from 400 mW at 25°C ambient to 0 mW at ~125°C ambient. This implies an effective RθJA of approximately 312.5°C/W (calculated from ΔT/ΔP), but actual board-level performance depends on copper area and airflow - design margins should follow the published curve, not assumed RθJA values.
HZS12A1TD-P-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS12A1TD-P-E FAQ
1.How can I place an order for HZS12A1TD-P-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS12A1TD-P-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS12A1TD-P-E reliable?
The price and inventory of HZS12A1TD-P-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS12A1TD-P-E is usually 5 days.
3.What payment methods are accepted for HZS12A1TD-P-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS12A1TD-P-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS12A1TD-P-E?
HZS12A1TD-P-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS12A1TD-P-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS12A1TD-P-E?
For technical support, including HZS12A1TD-P-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS12A1TD-P-E requirements.
6.How does Aetrix verify that HZS12A1TD-P-E is sourced from the original manufacturer or authorized distributors?
All HZS12A1TD-P-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS12A1TD-P-E meets industry standards.
7.What is the process for return or replacement of HZS12A1TD-P-E?
All HZS12A1TD-P-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS12A1TD-P-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS12A1TD-P-E part is unused and in its original packaging.
Return procedure for HZS12A1TD-P-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS12A1TD-P-E Tags
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