Renesas HZS12A3LTD-E
- Part No.:
- HZS12A3LTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS12A3LTD-E.pdf
- Description:
- DIODE ZENER
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Inventory:20,000
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Product details
Overview
HZS12A3LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog circuits, featuring a nominal zener voltage of 12.2–12.7 V at 0.5 mA, 400 mW power dissipation, and dynamic impedance of 80 Ω - enabling stable reference performance in low-current biasing applications such as sensor signal conditioning and instrumentation amplifiers.
For engineers reviewing the HZS12A3LTD-E datasheet, HZS12A3LTD-E pinout, HZS12A3LTD-E application, or HZS12A3LTD-E equivalent, this device is selected for noise-sensitive DC reference design where leakage current ≤1 μA at VR = 2.0 V and temperature coefficient stability across 12 V range are critical selection criteria.
Technical Context
This Zener diode operates in reverse breakdown mode with tightly controlled VZ tolerance (±0.5 V), specified under DC test conditions at IZ = 0.5 mA. Its low noise level - approximately 1/3–1/10 that of the legacy HZ series - stems from optimized silicon planar junction fabrication and low-leakage design.
The device exhibits a zener voltage temperature coefficient of approximately −0.02 %/°C near 12 V (per Fig.2), supporting stable operation over −55 to +175 °C storage range and up to 200 °C junction temperature. It is rated for 400 mW power dissipation on standard FR-phenolic PCB (100 × 180 × 1.6 mm).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 12.2–12.7 V at IZ = 0.5 mA - defines precise DC reference point for low-power analog stages |
| Dynamic Impedance (rd) | 80 Ω max at IZ = 0.5 mA - ensures minimal output voltage variation under small-signal load shifts |
| Reverse Leakage (IR) | ≤1 μA at VR = 2.0 V - preserves high-impedance node integrity in battery-powered or ultra-low-current circuits |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact through-hole layouts without forced cooling |
| Junction Temperature (Tj) | 200°C maximum - enables reliable use in thermally demanding industrial environments |
| Package | MHD (JEITA GRZZ0002ZC-A) - 5 mm pitch, axial-lead, 2.0 mm diameter body compatible with high-speed automatic insertion |
Pinout & Package
Package: MHD (axial-lead, glass-passivated silicon planar diode), 2.0 mm diameter × 26.0 mm length, cathode band marked in black, mass ≈ 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference terminal | Connected to regulated positive rail; polarity must be observed to maintain reverse-bias operation |
| 2 (Anode) | Reference ground return path | Typically tied to system ground or negative supply; completes current path during zener conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise Zener operation | Diode noise level ~1/3–1/10 lower than HZ series - directly improves SNR in precision ADC references and op-amp bias networks |
| Tight VZ tolerance | ±0.5 V window at 12.2–12.7 V - reduces calibration burden in factory-trimmed analog modules |
| Low zener impedance | 80 Ω max at 0.5 mA - maintains regulation accuracy even with modest load transients in low-power designs |
| High thermal robustness | 200°C max junction temperature - allows deployment in engine control units and industrial motor drives |
| Automated assembly compatibility | 5 mm pitch, MHD package - supports high-yield placement on legacy and modern SMT-compatible through-hole lines |
Applications
| Industrial Sensor Signal Conditioning | Portable Instrumentation Power Reference |
|---|---|
Use Scenario: Stabilizing excitation voltage for bridge-based pressure/strain sensors in PLC I/O modules. IC Role / Device Role / Timing Role: Low-noise voltage reference source for ratiometric measurement front-ends. Use Value: 80 Ω dynamic impedance and ≤1 μA leakage minimize offset drift and enable <12-bit effective resolution. |
Use Scenario: Providing stable 12.5 V reference for handheld multimeter analog-to-digital conversion. IC Role / Device Role / Timing Role: Precision DC reference in battery-powered portable test equipment. Use Value: Low noise and tight VZ tolerance eliminate need for post-calibration trimming in production. |
| Medical Diagnostic Equipment Biasing | Automotive Cabin Control Module Regulation |
Use Scenario: Generating clean bias for photodiode transimpedance amplifiers in pulse oximetry front-ends. IC Role / Device Role / Timing Role: Low-noise zener reference in analog signal chain preceding ADC sampling. Use Value: 1/10 noise vs. HZ series directly improves detection sensitivity for weak optical signals. |
Use Scenario: Regulating 12 V supply rail for microcontroller and CAN transceiver in HVAC control units. IC Role / Device Role / Timing Role: Secondary voltage clamp and stabilization element in non-isolated DC-DC post-regulation stage. Use Value: 400 mW rating and −55 to +175 °C storage range support under-hood thermal cycling compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A (ON Semiconductor) | VZ = 12 V ±5%, rd = 9 Ω typical (at 21 mA), Pd = 1 W, higher test current | Higher power, higher noise, requires ≥21 mA bias - unsuitable for ultra-low-current or low-noise designs | Select only when higher current drive and thermal margin outweigh noise and leakage requirements |
| BZX84-C12 (Diodes Inc.) | VZ = 12 V ±5%, rd = 25 Ω (at 5 mA), SOT-23 surface-mount, 350 mW rating | SMT-only, higher dynamic impedance, no low-noise characterization - limited for precision analog use | Prefer for space-constrained PCBs where noise performance is secondary to footprint reduction |
Compared with 1N4742A and BZX84-C12, HZS12A3LTD-E delivers superior low-noise behavior and tighter VZ tolerance at microampere-level bias currents, making it uniquely suited for battery-powered instrumentation and sensor interfaces where signal integrity dominates layout constraints.
Availability
HZS12A3LTD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, portable instrumentation power reference, medical diagnostic equipment biasing, and automotive cabin control module regulation requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for HZS12A3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
HZS12A3LTD-E belongs to the HZS-L Series of low-noise silicon planar Zener diodes, designed specifically for precision voltage reference applications demanding reduced noise, low leakage, and stable regulation in analog signal chains.
FAQ
What is the zener voltage range of HZS12A3LTD-E at 0.5 mA test current?
The HZS12A3LTD-E has a zener voltage range of 12.2 V to 12.7 V when tested at IZ = 0.5 mA under DC conditions. This narrow ±0.5 V window ensures consistent reference accuracy across production lots and supports minimal calibration overhead in precision analog systems using the HZS12A3LTD-E.
Is HZS12A3LTD-E suitable for low-current, low-noise applications?
Yes - the HZS12A3LTD-E is explicitly characterized for low-noise operation, with noise approximately 1/3–1/10 that of the legacy HZ series. Its ≤1 μA reverse leakage at 2.0 V and 80 Ω dynamic impedance at 0.5 mA make the HZS12A3LTD-E ideal for micropower sensor interfaces and battery-operated instrumentation where signal integrity is critical.
What package type does HZS12A3LTD-E use, and is it compatible with automated insertion?
HZS12A3LTD-E uses the MHD package (JEITA code GRZZ0002ZC-A), an axial-lead, glass-passivated silicon planar diode with 5 mm pitch and 2.0 mm body diameter. The MHD package is explicitly qualified for high-speed automatic insertion, and its standardized dimensions ensure compatibility with legacy and modern through-hole assembly lines handling the HZS12A3LTD-E.
What is the maximum power dissipation and thermal rating of HZS12A3LTD-E?
HZS12A3LTD-E has a maximum power dissipation of 400 mW at Ta = 25°C and a maximum junction temperature of 200°C. Its thermal derating follows the curve in Fig.3 of the datasheet, maintaining functionality up to 175°C ambient when mounted on a standard 100 × 180 × 1.6 mm phenolic PCB - confirming suitability for under-hood and industrial control applications using the HZS12A3LTD-E.
Does HZS12A3LTD-E have a specified zener voltage temperature coefficient?
Yes - while not listed per-part in the table, Figure 2 of the HZS-L Series datasheet shows the zener voltage temperature coefficient (γZ) for 12 V-class devices like the HZS12A3LTD-E is approximately −0.02 %/°C. This negative coefficient enables predictable compensation in multi-Zener reference designs and confirms stable performance across the −55 to +175 °C storage range for the HZS12A3LTD-E.
HZS12A3LTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS12A3LTD-E FAQ
1.How can I place an order for HZS12A3LTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS12A3LTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS12A3LTD-E reliable?
The price and inventory of HZS12A3LTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS12A3LTD-E is usually 5 days.
3.What payment methods are accepted for HZS12A3LTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS12A3LTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS12A3LTD-E?
HZS12A3LTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS12A3LTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS12A3LTD-E?
For technical support, including HZS12A3LTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS12A3LTD-E requirements.
6.How does Aetrix verify that HZS12A3LTD-E is sourced from the original manufacturer or authorized distributors?
All HZS12A3LTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS12A3LTD-E meets industry standards.
7.What is the process for return or replacement of HZS12A3LTD-E?
All HZS12A3LTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS12A3LTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS12A3LTD-E part is unused and in its original packaging.
Return procedure for HZS12A3LTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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