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Renesas HZS12B1TD-E

Part No.:
HZS12B1TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS12B1TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:42,500

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Product details

Overview

HZS12B1TD-E from Renesas Electronics is a silicon planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits, with a nominal zener voltage of 12.4 V (min) to 12.9 V (max) at 1 mA test current, 9.5 Ω dynamic resistance, 400 mW power dissipation, and operation up to 200°C junction temperature - used in precision reference and overvoltage protection circuits for industrial control modules.

For engineers reviewing the HZS12B1TD-E datasheet, HZS12B1TD-E pinout, HZS12B1TD-E application, or HZS12B1TD-E equivalent, this page delivers verified electrical specs, package mapping to MHD (JEITA GRZZ0002ZC-A), cathode/anode terminal roles, thermal derating behavior, and two validated alternative Zener diodes for supply rail stabilization and voltage clamping.

Technical Context

The HZS12B1TD-E operates as a two-terminal voltage reference device using silicon planar Zener breakdown, optimized for stable DC regulation under low-current conditions (IZ = 1 mA). Its design targets minimal temperature coefficient drift and low dynamic impedance to maintain tight output voltage tolerance across ambient variations.

It features a maximum reverse leakage current of 1 µA at VR = 10.2 V, junction-to-ambient thermal resistance derived from its MHD package geometry, and compliance with Renesas' Standard quality grade for industrial and office equipment applications per document REJ03G0184-0500 Rev.5.00.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 12.4 V min to 12.9 V max at IZ = 1 mA - defines regulated output range for feedback references.
Dynamic Resistance (rd) 9.5 Ω max at IZ = 1 mA - ensures low sensitivity to load current changes in shunt regulator designs.
Power Dissipation (Pd) 400 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating applies.
Junction Temperature (Tj) 200°C max - enables reliable operation in high-temperature industrial environments without forced cooling.
Reverse Leakage (IR) 1 µA max at VR = 10.2 V - guarantees minimal quiescent current draw in standby or battery-backed circuits.
Storage Temperature −55°C to +175°C - supports wide-range logistics and long-term storage without parametric shift.

Pinout & Package

The HZS12B1TD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial leaded, epoxy-molded, 2-pin through-hole device with cathode band marking. Dimensions: φD = 2.0 mm max, E = 2.4 mm max, L = 26.0 mm min, mass ≈ 0.084 g. Suitable for 5 mm-pitch automatic insertion.

Pin/Terminal Circuit Role Design Meaning
1 Cathode Connected to higher potential side in reverse-biased configuration; marked with lake-blue band.
2 Anode Connected to lower potential (ground or return path); establishes forward voltage drop < 1.2 V if biased forward.

Key Features

Feature Design Value
Low dynamic impedance 9.5 Ω max ensures stable regulation under ±10% load current variation in shunt configurations.
Wide zener voltage spectrum Part of HZS Series covering 1.6–38 V - allows direct selection of HZS12B1TD-E for 12 V rail stabilization without external scaling.
High-temperature capability 200°C max junction temperature supports use in enclosed enclosures or near heat-generating components.
Low leakage performance ≤1 µA at 10.2 V enables microamp-level standby current budgets in always-on monitoring circuits.

Applications

Industrial Power Monitoring Microcontroller Reset Circuit

Use Scenario: Monitoring 12 V DC bus in PLC I/O modules for undervoltage detection.

IC Role / Device Role / Timing Role: Zener reference in comparator input stage to trigger reset when VIN drops below 11.5 V.

Use Value: Tight 12.4–12.9 V tolerance and 9.5 Ω rd minimize hysteresis error and improve trip-point repeatability across temperature.

Use Scenario: Generating clean 12 V reference for brown-out detector in embedded motor controllers.

IC Role / Device Role / Timing Role: Shunt regulator providing stable bias to reset IC's voltage-sense input.

Use Value: 1 µA max reverse leakage prevents loading of weak bias sources; 400 mW rating accommodates transient surges without failure.

DC-DC Converter Feedback Overvoltage Clamp Protection

Use Scenario: Secondary-side voltage sensing in isolated 12 V flyback converters.

IC Role / Device Role / Timing Role: Precision reference for optocoupler-driven feedback loop.

Use Value: Low temperature coefficient (≈−0.04 %/°C at 12 V) reduces output drift over −40°C to +85°C operating range.

Use Scenario: Clamping induced transients on 12 V sensor supply lines in automotive body control units.

IC Role / Device Role / Timing Role: Transient voltage suppressor placed parallel to load.

Use Value: 200°C junction rating withstands repeated surge events without parameter shift; 400 mW Pd handles 100 ms pulses up to 400 mW average.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX55-C12 (ON Semiconductor) Zener voltage 11.4–12.6 V at 5 mA; 15 Ω rd; 500 mW Pd; DO-35 package. Higher test current (5 mA vs. 1 mA) shifts operating point; larger package requires PCB rework. Select when higher power margin is needed and layout allows DO-35 footprint.
MMSZ5242B (Diodes Inc.) Zener voltage 11.4–12.6 V at 20 mA; 9 Ω rd; SOD-123 surface-mount package; 500 mW rating. SMT-only; not pin-compatible; requires redesign for automated placement and reflow. Choose for space-constrained boards where through-hole insertion is impractical.

Compared with BZX55-C12 and MMSZ5242B, the HZS12B1TD-E offers tighter VZ tolerance at low test current, through-hole compatibility for legacy manufacturing, and guaranteed 200°C Tj - making it preferable for industrial systems requiring long-term reliability without layout change.

Availability

HZS12B1TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, microcontroller reset circuits, DC-DC converter feedback networks, and overvoltage clamp protection requiring stable component supply with traceable sourcing and lifecycle continuity.

Supply support for HZS12B1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and consumer markets.

The HZS Series was developed by Renesas as a family of general-purpose silicon planar Zener diodes targeting stabilized power supply design, offering consistent performance across 1.6–38 V with standardized MHD packaging for high-speed insertion.

FAQ

What is the exact zener voltage range for HZS12B1TD-E at 1 mA test current?

The HZS12B1TD-E has a specified zener voltage range of 12.4 V minimum to 12.9 V maximum when tested at IZ = 1 mA, per Renesas datasheet REJ03G0184-0500 Rev.5.00. This grading (B1) ensures predictable regulation in low-current shunt applications without requiring external trimming. The HZS12B1TD-E maintains this specification across its full operating temperature range.

Is HZS12B1TD-E suitable for surface-mount assembly?

No - the HZS12B1TD-E uses the MHD through-hole package (JEITA GRZZ0002ZC-A) with radial leads and is designed for wave soldering or manual insertion. It is not compatible with reflow or pick-and-place processes. For SMT alternatives, consider MMSZ5242B or BZX84-C12, but note these require PCB redesign and are not functionally identical to HZS12B1TD-E.

What is the maximum allowable reverse voltage before breakdown for HZS12B1TD-E?

The HZS12B1TD-E begins controlled Zener breakdown at its rated VZ (12.4–12.9 V), and its absolute maximum reverse voltage is not separately defined - operation above VZ is intended and safe within power and current limits. However, applied reverse voltage must remain ≤ VZ + (IZ × rd) to avoid thermal runaway; for HZS12B1TD-E, this means staying within 400 mW dissipation and respecting the 1 µA leakage ceiling at 10.2 V.

Does HZS12B1TD-E meet RoHS requirements?

Yes - the HZS12B1TD-E complies with the EU RoHS Directive, as confirmed by Renesas' environmental compliance documentation. Lead content is restricted to ≤1000 ppm, and all six RoHS substances are within allowable limits. Full material declarations and test reports are available upon request from Aetrix Electronics for HZS12B1TD-E procurement.

Can HZS12B1TD-E be used in automotive applications?

No - the HZS12B1TD-E is classified as a Standard-grade Renesas product, qualified for computers, office equipment, industrial robots, and communications gear per document REJ03G0184-0500. It is not AEC-Q200 qualified and lacks the extended temperature range, vibration resistance, and failure-rate validation required for automotive use. For automotive-grade Zeners, consult Renesas' "High Quality" portfolio or alternate manufacturers' AEC-certified parts.

HZS12B1TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS12B1TD-E FAQ

1.How can I place an order for HZS12B1TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS12B1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS12B1TD-E reliable?

The price and inventory of HZS12B1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS12B1TD-E is usually 5 days.

3.What payment methods are accepted for HZS12B1TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS12B1TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS12B1TD-E?

HZS12B1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS12B1TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS12B1TD-E?

For technical support, including HZS12B1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS12B1TD-E requirements.

6.How does Aetrix verify that HZS12B1TD-E is sourced from the original manufacturer or authorized distributors?

All HZS12B1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS12B1TD-E meets industry standards.

7.What is the process for return or replacement of HZS12B1TD-E?

All HZS12B1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS12B1TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS12B1TD-E part is unused and in its original packaging.

Return procedure for HZS12B1TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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