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Renesas HZS12B2LTA-E
- Part No.:
- HZS12B2LTA-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS12B2LTA-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:15,000
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Product details
Overview
HZS12B2LTA-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 12.6 V to 13.1 V, dynamic resistance of 80 Ω at 10.5 mA, and maximum power dissipation of 400 mW. It is used in stabilized power supplies, sensor excitation circuits, and instrumentation references where low noise and tight voltage tolerance are critical.
For engineers reviewing the HZS12B2LTA-E datasheet, HZS12B2LTA-E pinout, HZS12B2LTA-E application, or HZS12B2LTA-E equivalent, this device is selected for its verified low-noise performance (≈1/3–1/10 lower than HZ series), stable temperature coefficient near zero crossing (~0.02 %/°C at 12.6–13.1 V), and compatibility with 5 mm-pitch high-speed automatic insertion in industrial PCB assembly.
Technical Context
This Zener diode operates in reverse breakdown mode with DC-tested zener voltage specification and exhibits low leakage current (≤1 μA at VR = 10.5 V) and low zener impedance-key for minimizing output ripple in shunt-regulated references. Its planar construction ensures reproducible breakdown characteristics and improved long-term stability over junction-processed alternatives.
The HZS12B2LTA-E belongs to the HZS-L Series, designed specifically for low-noise applications requiring reduced diode-generated noise floor in sensitive analog front-ends. Its zener voltage temperature coefficient crosses zero near 12.6–13.1 V, enabling minimal drift in mid-range reference designs without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 12.6 V (min) to 13.1 V (max) at IZ = 0.5 mA - defines stable reference point for ±0.25 V tolerance in precision biasing |
| Dynamic Resistance (rd) | 80 Ω max at IZ = 10.5 mA - ensures low AC impedance for effective ripple suppression in shunt regulation |
| Power Dissipation (Pd) | 400 mW max at Ta = 25°C - supports continuous operation in compact PCB layouts with adequate thermal relief |
| Reverse Leakage (IR) | ≤1 μA at VR = 10.5 V - minimizes error current in high-impedance reference nodes |
| Junction Temperature (Tj) | 200°C max - enables reliable operation in elevated ambient environments when derated per Fig.3 |
| Noise Level | ≈1/3–1/10 lower than HZ series - directly reduces broadband noise contribution in audio, measurement, and sensor signal chains |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial lead, glass-passivated silicon planar diode with cathode band marking. Dimensions: φD = 2.0 mm (nom), L = 26.0 mm (min), E = 2.4 mm (max), mass ≈ 0.084 g. Compatible with 5 mm pitch automated insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference node | Connected to regulated output or bias rail; polarity-sensitive for correct reverse-bias operation |
| 2 (Anode) | Reference ground return path | Completes shunt current path; must be tied to stable low-impedance ground for noise control |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise Zener operation | Diode noise reduced to ≈1/3–1/10 of HZ series - critical for sub-mV-level signal integrity in precision ADC references |
| Zero-crossing temperature coefficient | γZ ≈ 0.02 %/°C near 12.6–13.1 V - enables stable reference without external temp-compensation circuitry |
| Low zener impedance | rd ≤ 80 Ω at 10.5 mA - maintains regulation accuracy under varying load currents in shunt configurations |
| High reliability planar structure | Si planar junction with glass passivation - improves long-term parameter stability and moisture resistance vs. alloyed diodes |
| Automated assembly compatibility | MHD package with 5 mm pitch - supports high-throughput SMT-compatible through-hole insertion in industrial manufacturing |
Applications
| Industrial Sensor Signal Conditioning | Precision ADC Reference Source |
|---|---|
|
Use Scenario: Providing stable excitation voltage to bridge-based pressure/strain sensors in factory automation systems. IC Role / Device Role / Timing Role: Shunt voltage reference maintaining constant bias across sensor elements despite supply ripple. Use Value: Low 1/f and broadband noise from HZS12B2LTA-E prevents degradation of <16-bit ENOB in sigma-delta ADC measurements. |
Use Scenario: Generating a clean 12.8 V reference for 24-bit delta-sigma ADCs in metrology-grade data loggers. IC Role / Device Role / Timing Role: Primary voltage reference node in ratiometric or buffered reference architectures. Use Value: Dynamic resistance ≤80 Ω ensures reference stability under ADC input sampling transients, preserving linearity. |
| Low-Drift Instrumentation Amplifier Bias | Stabilized Power Supply Feedback |
|
Use Scenario: Setting precise gain and offset in medical-grade EEG/ECG front-end amplifiers operating at room temperature. IC Role / Device Role / Timing Role: Zener-based bias generator for op-amp input stage common-mode voltage control. Use Value: Near-zero temperature coefficient minimizes baseline drift over 0–50°C ambient range without calibration. |
Use Scenario: Voltage sensing node in 15 V switched-mode power supply feedback loop for telecom base station modules. IC Role / Device Role / Timing Role: Shunt reference element in optocoupler-coupled secondary-side regulation. Use Value: 400 mW power rating allows robust operation during transient overload conditions without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A (ON Semiconductor) | Zener voltage 12 V ±5%, rd = 9 Ω typical (at 21 mA), higher noise, no zero-TC specification | Better dynamic regulation but higher broadband noise; requires higher test current for spec compliance | Select when lowest possible impedance dominates over noise; verify layout filtering for noise-sensitive stages |
| BZX85C12 (Nexperia) | Zener voltage 12 V ±5%, Pd = 1.3 W, rd = 25 Ω typical (at 35 mA), higher leakage (≤5 μA) | Higher power handling enables use in higher-current shunt regulators; less suitable for ultra-low-current biasing | Prefer for >20 mA reference current designs; avoid in micro-power sensor nodes due to leakage penalty |
Compared with 1N4742A and BZX85C12, the HZS12B2LTA-E delivers superior noise performance and tighter voltage tolerance at moderate current, making it optimal for precision analog signal chains where spectral purity outweighs raw power capability.
Availability
HZS12B2LTA-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, precision ADC reference design, and stabilized power supply feedback requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for HZS12B2LTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and IoT applications.
The HZS-L Series was developed by Renesas to address demand for low-noise, temperature-stable Zener references in high-fidelity analog systems-targeting instrumentation, test equipment, and sensor interface markets.
FAQ
What is the exact zener voltage range specified for HZS12B2LTA-E?
The HZS12B2LTA-E has a guaranteed zener voltage range of 12.6 V (minimum) to 13.1 V (maximum) when tested at IZ = 0.5 mA, per Renesas datasheet REJ03G0166-0300 Rev.3.00. This 0.5 V span reflects tight process control for precision reference applications, and the HZS12B2LTA-E must be operated within this range to meet its specified dynamic resistance and temperature coefficient.
Does HZS12B2LTA-E have a documented temperature coefficient, and what is its value?
Yes, the HZS12B2LTA-E exhibits a zener voltage temperature coefficient (γZ) of approximately +0.02 %/°C near its nominal voltage, as shown in Figure 2 of the official datasheet. This near-zero crossing makes the HZS12B2LTA-E especially suitable for applications requiring minimal drift between 0°C and 70°C without external compensation networks.
Can HZS12B2LTA-E be used in surface-mount designs?
No-HZS12B2LTA-E uses the axial-leaded MHD package (JEITA GRZZ0002ZC-A) and is intended for through-hole mounting. It is not a surface-mount device. For SMT-compatible alternatives with similar electrical specs, consult Renesas' HZS-L Series SMD variants or consider discrete replacements like the MM3Z12VT1G, but note that noise and TC performance may differ from the HZS12B2LTA-E.
What is the maximum reverse leakage current for HZS12B2LTA-E, and under what condition is it measured?
The maximum reverse leakage current for HZS12B2LTA-E is 1 μA, measured at VR = 10.5 V and Ta = 25°C. This low leakage ensures minimal error current in high-impedance reference nodes, supporting accurate biasing in micropower sensor interfaces and battery-operated instrumentation where the HZS12B2LTA-E is commonly deployed.
Is HZS12B2LTA-E compliant with RoHS and lead-free requirements?
Yes, HZS12B2LTA-E meets EU RoHS Directive requirements. Renesas confirms environmental compliance for the HZS-L Series in accordance with applicable regulations, including restriction of lead, cadmium, mercury, hexavalent chromium, PBB, and PBDE. Full material declarations and compliance documentation for HZS12B2LTA-E are available via Renesas' official product page and authorized distributor portals.
HZS12B2LTA-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS12B2LTA-E FAQ
1.How can I place an order for HZS12B2LTA-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS12B2LTA-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS12B2LTA-E reliable?
The price and inventory of HZS12B2LTA-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS12B2LTA-E is usually 5 days.
3.What payment methods are accepted for HZS12B2LTA-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS12B2LTA-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS12B2LTA-E?
HZS12B2LTA-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS12B2LTA-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS12B2LTA-E?
For technical support, including HZS12B2LTA-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS12B2LTA-E requirements.
6.How does Aetrix verify that HZS12B2LTA-E is sourced from the original manufacturer or authorized distributors?
All HZS12B2LTA-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS12B2LTA-E meets industry standards.
7.What is the process for return or replacement of HZS12B2LTA-E?
All HZS12B2LTA-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS12B2LTA-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS12B2LTA-E part is unused and in its original packaging.
Return procedure for HZS12B2LTA-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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