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Renesas HZS12B3LTD-E
- Part No.:
- HZS12B3LTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS12B3LTD-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:7,500
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Product details
Overview
HZS12B3LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage regulation in precision analog and power supply circuits, with a nominal zener voltage of 12.9 V to 13.4 V, dynamic resistance of 80 Ω at 0.5 mA test current, and maximum power dissipation of 400 mW in the MHD package.
For engineers reviewing the HZS12B3LTD-E datasheet, HZS12B3LTD-E pinout, HZS12B3LTD-E application, or HZS12B3LTD-E equivalent, this device is selected for stable reference generation in instrumentation amplifiers, low-drift sensor biasing, and noise-sensitive linear regulator feedback paths where zener impedance and voltage temperature coefficient are critical.
Technical Context
This Zener diode employs a silicon planar junction structure with controlled doping and geometry to achieve low noise (≈1/3–1/10 that of the legacy HZ series), low leakage, and tight zener voltage tolerance across its 12.9–13.4 V range. Its design targets DC-stabilized references rather than transient suppression or high-current clamping.
The device operates within a junction temperature range up to 200°C and exhibits a zener voltage temperature coefficient near zero at ~12 V - confirmed by Figure 2 in REJ03G0166-0300 - making it suitable for ambient-stable voltage references in industrial-grade equipment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 12.9 V (min) to 13.4 V (max) at IZ = 0.5 mA - defines precise DC reference point for feedback networks |
| Dynamic Resistance (rd) | 80 Ω max at IZ = 0.5 mA - ensures minimal output impedance variation under load changes |
| Power Dissipation (Pd) | 400 mW max at Ta = 25°C - supports continuous operation in compact PCB layouts without forced cooling |
| Reverse Leakage Current (IR) | 1 μA max at VR = 2.0 V - guarantees negligible error current in high-impedance reference nodes |
| Junction Temperature (Tj) | 200°C max - enables reliable operation in thermally demanding environments such as enclosed industrial controllers |
| Storage Temperature | −55°C to +175°C - compatible with reflow soldering and long-term storage in uncontrolled warehouses |
Pinout & Package
The HZS12B3LTD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, epoxy-molded case with 2.0 mm diameter leads spaced 5 mm apart, optimized for high-speed automatic insertion and compatible with standard 5 mm pitch PCB footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to regulated output node; polarity must be observed to avoid forward conduction |
| 2 (Anode) | Reference ground return | Provides low-impedance path to circuit common; forms the reference voltage drop across the diode junction |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise Zener operation | Diode noise level ≈1/3–1/10 lower than HZ series - directly reduces RMS noise in precision voltage references |
| Tight zener voltage tolerance | ±0.25 V window (12.9–13.4 V) at 0.5 mA - minimizes calibration drift in factory-trimmed systems |
| Near-zero temperature coefficient | γZ ≈ 0 mV/°C near 12 V (per Fig.2) - suppresses thermal drift in ambient-varying environments |
| Low leakage performance | IR ≤ 1 μA at 2.0 V reverse bias - preserves accuracy in high-impedance divider networks |
| Robust thermal rating | Tj = 200°C max - allows use in sealed enclosures without derating below 100°C ambient |
Applications
| Instrumentation Amplifier Reference | Industrial Sensor Biasing |
|---|---|
Use Scenario: Providing stable excitation voltage to bridge-based pressure sensors in PLC analog input modules. IC Role / Device Role / Timing Role: Zener reference source for ratiometric ADC biasing, replacing higher-cost bandgap ICs where ±0.5% stability suffices. Use Value: 80 Ω dynamic resistance and low noise ensure <10 μVpp ripple on 13.1 V bias, maintaining 16-bit effective resolution. |
Use Scenario: Supplying calibrated bias current to RTD front-end transimpedance amplifiers in temperature transmitters. IC Role / Device Role / Timing Role: Low-leakage voltage reference enabling sub-1 nA error current into high-gain op-amp inputs. Use Value: 1 μA max reverse leakage prevents >0.01% gain error in 100 kΩ feedback networks at 25°C. |
| Linear Regulator Feedback Node | Calibration Voltage Standard |
Use Scenario: Setting output voltage in discrete LDO designs for FPGA core supplies requiring <50 mV line/load regulation. IC Role / Device Role / Timing Role: Precision shunt reference in adjustable regulator feedback divider, operating in active zener region. Use Value: 12.9–13.4 V range aligns with common 1.2 V LDO error amplifier reference ratios (e.g., 10:1 divider yields 13.1 V output). |
Use Scenario: On-board calibration reference in portable multimeters and handheld DMMs during self-test routines. IC Role / Device Role / Timing Role: Stable, low-drift DC voltage source traceable to factory characterization data per REJ03G0166-0300. Use Value: Near-zero γZ at 13.1 V reduces temperature-induced error to <±0.02%/°C over −20°C to +70°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor 1N4742A | Zener voltage 12 V ±5%, rd = 9 Ω @ 21 mA, Pd = 1 W, higher noise, TO-204AA package | Better suited for high-current shunt regulation; unsuitable for low-current, low-noise biasing | Select only when >20 mA bias current is available and noise floor is non-critical |
| Diodes Incorporated BZX84-C13 | Zener voltage 13 V ±5%, rd = 30 Ω @ 5 mA, Pd = 300 mW, SOT-23 package, higher leakage (≤5 μA) | Smaller footprint but higher tempco and leakage - compromises stability in precision analog stages | Prefer for space-constrained boards where 13 V nominal suffices and thermal drift <±0.1%/°C is acceptable |
Compared with 1N4742A and BZX84-C13, the HZS12B3LTD-E delivers superior low-noise performance and tighter voltage tolerance at low bias currents, making it uniquely appropriate for instrumentation-grade references where dynamic resistance and temperature coefficient dominate selection criteria.
Availability
HZS12B3LTD-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, precision analog front-ends, and calibration-grade power supply references requiring stable component supply across multi-year production cycles.
Supply support for HZS12B3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS-L Series was developed specifically for low-noise, high-stability Zener reference applications in measurement and control systems where conventional Zeners introduce unacceptable signal degradation.
FAQ
What is the exact zener voltage range for HZS12B3LTD-E at 0.5 mA test current?
The HZS12B3LTD-E has a guaranteed zener voltage range of 12.9 V (minimum) to 13.4 V (maximum) when tested at IZ = 0.5 mA, as specified in the Electrical Characteristics table on page 3 of REJ03G0166-0300. This narrow 0.5 V window supports accurate voltage setting without post-manufacture trimming.
Is HZS12B3LTD-E suitable for surface-mount assembly?
No - the HZS12B3LTD-E uses the through-hole MHD package with 5 mm lead pitch and radial leads, designed for wave soldering or high-speed axial insertion. It is not compatible with SMT reflow processes. For SMT alternatives, consider Renesas' HZS-L Series SMD variants like HZS12B3LTD-E's counterpart in MELF or SOD-123 packages, if available.
Does HZS12B3LTD-E meet RoHS requirements?
Yes - HZS12B3LTD-E complies with the EU RoHS Directive, as confirmed by Renesas' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and is rated for "Standard" quality grade applications per Renesas' classification system.
What is the maximum allowable reverse voltage before breakdown for HZS12B3LTD-E?
The HZS12B3LTD-E begins controlled zener breakdown at its specified VZ range (12.9–13.4 V). Its absolute maximum reverse voltage is not defined separately - operation above VZ is normal and intended. However, reverse voltage must remain within power dissipation limits: exceeding 400 mW (e.g., >31 mA at 13 V) risks thermal failure. Always limit current with a series resistor.
How does the noise performance of HZS12B3LTD-E compare to standard Zener diodes?
HZS12B3LTD-E achieves approximately 1/3 to 1/10 the noise level of legacy HZ-series Zeners, as stated in the Features section of REJ03G0166-0300. This reduction stems from optimized planar junction fabrication and low-impurity silicon processing, directly lowering broadband RMS noise in voltage reference outputs used in audio preamps and precision ADCs.
HZS12B3LTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS12B3LTD-E FAQ
1.How can I place an order for HZS12B3LTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS12B3LTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS12B3LTD-E reliable?
The price and inventory of HZS12B3LTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS12B3LTD-E is usually 5 days.
3.What payment methods are accepted for HZS12B3LTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS12B3LTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS12B3LTD-E?
HZS12B3LTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS12B3LTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS12B3LTD-E?
For technical support, including HZS12B3LTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS12B3LTD-E requirements.
6.How does Aetrix verify that HZS12B3LTD-E is sourced from the original manufacturer or authorized distributors?
All HZS12B3LTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS12B3LTD-E meets industry standards.
7.What is the process for return or replacement of HZS12B3LTD-E?
All HZS12B3LTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS12B3LTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS12B3LTD-E part is unused and in its original packaging.
Return procedure for HZS12B3LTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS12B3LTD-E Tags
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BZT52C5V6T-7
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MMSZ5231B-7-F
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BZX84C3V3LT1G
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MMSZ5245BS-7-F
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MMSZ4682T1G
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BZT52C15S-7-F
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
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SMAZ12-13-F
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