Renesas HZS12B3TD-E

Overview

HZS12B3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 12.9–13.4 V at 1 mA test current, with dynamic resistance of 35 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C - enabling use in compact industrial power rails and reference circuits.

For engineers reviewing the HZS12B3TD-E datasheet, HZS12B3TD-E pinout, HZS12B3TD-E application, or HZS12B3TD-E equivalent, key selection criteria include its tight zener voltage tolerance (±0.5 V), low leakage current (<5 µA at VR = 10.2 V), DC-tested characteristics, MHD package compatibility with 5 mm-pitch automated insertion, and suitability for non-safety-critical industrial and office equipment per Renesas Standard quality grade.

Technical Context

The HZS12B3TD-E operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current above its specified zener breakdown threshold. Its silicon planar construction ensures reproducible breakdown characteristics and low temperature coefficient drift in the 12–13 V range.

It is rated for DC operation only, with absolute maximum ratings defined at Ta = 25°C: 400 mW power dissipation, −55 to +175°C storage temperature, and 200°C junction temperature. Thermal derating follows the published power dissipation vs. ambient temperature curve (Fig.3), requiring design consideration above 50°C ambient.

Key Specifications

Pinout & Package

The HZS12B3TD-E is housed in the MHD package: a glass-passivated, axial-leaded silicon planar diode with cathode band marking. Dimensions conform to JEITA GRZZ0002ZC-A: φD = 2.0 mm max, E = 2.4 mm max, L = 26.0 mm min, mass ≈ 0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4742A and BZX55C12, the HZS12B3TD-E offers tighter voltage tolerance (±0.5 V vs. ±5%), MHD package optimized for 5 mm-pitch insertion, and Renesas Standard-grade qualification for industrial office equipment - making it optimal for space-constrained, high-precision low-power regulation where consistency and manufacturability matter.

Availability

HZS12B3TD-E is available at Aetrix Electronics and suitable for industrial power supplies, sensor interface modules, and microcontroller peripheral biasing requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZS12B3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The HZS Series is part of Renesas' discrete diode portfolio, engineered specifically for stable, low-leakage voltage regulation in cost-sensitive industrial and office equipment power systems.

FAQ

What is the exact zener voltage range for HZS12B3TD-E?

The HZS12B3TD-E has a guaranteed zener voltage range of 12.9 V to 13.4 V when tested at I_Z = 1 mA and T_a = 25°C. This 0.5 V span reflects its B3 grade within the HZS12 family and is confirmed in the Electrical Characteristics table on page 3 of the REJ03G0184-0500 datasheet. The HZS12B3TD-E is not rated for operation outside this specified DC test condition.

Is HZS12B3TD-E suitable for automotive applications?

No - the HZS12B3TD-E is classified as a Renesas Standard quality grade device, intended for computers, office equipment, communications gear, and industrial robots per document note 7. It is not qualified for automotive use, which requires High Quality grade parts with extended temperature, AEC-Q101 stress testing, and automotive-specific reliability reporting. For automotive Zener applications, consult Renesas' dedicated automotive diode portfolio.

What does the "TD-E" suffix indicate in HZS12B3TD-E?

The "TD-E" suffix in HZS12B3TD-E denotes tape-and-reel packaging per JEDEC standard J-STD-020, with embossed carrier tape (E-type), 2,000 units per reel, and RoHS-compliant lead finish. This packaging format is optimized for automated pick-and-place and high-volume PCB assembly - distinct from bulk or ammo-pack variants used for manual or low-volume prototyping.

Can HZS12B3TD-E replace HZS12B2 in an existing design?

Yes, but with voltage tolerance trade-offs: HZS12B2 specifies 12.4–12.9 V, while HZS12B3TD-E is 12.9–13.4 V - a 0.5 V upward shift in both min and max bounds. If the original design relies on the lower end of the HZS12B2 range, the HZS12B3TD-E may raise regulated voltage beyond acceptable limits. Verify system-level margin before substitution.

What is the maximum allowable reverse voltage before breakdown for HZS12B3TD-E?

The HZS12B3TD-E begins controlled zener conduction at its specified V_Z range (12.9–13.4 V). Its absolute maximum reverse voltage is not separately defined - operation above V_Z is intentional and normal. However, applied reverse voltage must never exceed the power dissipation limit: for example, at 15 V input, current must be limited to ≤26.7 mA to stay within 400 mW. Exceeding P_d risks thermal runaway and permanent damage to the HZS12B3TD-E.