Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZS13NB1TD-E

Part No.:
HZS13NB1TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS13NB1TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:60,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZS13NB1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 13.03–13.62 V at 5 mA, with dynamic resistance of 10 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C - enabling use in compact industrial power rails and reference circuits.

For engineers reviewing the HZS13NB1TD-E datasheet, HZS13NB1TD-E pinout, HZS13NB1TD-E application, or HZS13NB1TD-E equivalent, key selection criteria include its B1-grade zener voltage tolerance (±2.3% typical), low leakage current (≤0.2 μA at VR = 10 V), MHD package compatibility with 5 mm-pitch automated insertion, and suitability for non-safety-critical industrial and office equipment per Renesas Standard quality grade.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its zener voltage exhibits a positive temperature coefficient of +0.045 %/°C near 13 V, requiring thermal compensation only in high-precision applications. The diode is rated for continuous operation up to 200°C junction temperature and supports pulse testing per PW = 40 ms.

The HZS13NB1TD-E is optimized for stable DC biasing and overvoltage clamping in linear regulators and sensor excitation circuits. Its 10 Ω dynamic resistance ensures minimal output voltage variation under load changes up to ±1 mA, while the 400 mW power rating allows operation at ambient temperatures up to 85°C on standard FR-1 PCBs (100 × 180 × 1.6 mm).

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 13.03–13.62 V at IZ = 5 mA - defines precise regulation point for feedback networks and reference generation.
Dynamic Resistance (rd) 10 Ω max at IZ = 5 mA - ensures <13 mV output shift per 1 mA load change, critical for stable biasing.
Power Dissipation (Pd) 400 mW max - enables use in space-constrained designs without forced cooling on standard PCBs.
Junction Temperature (Tj) –55 to +200°C - supports operation in extended industrial environments including motor control enclosures.
Reverse Leakage (IR) ≤0.2 μA at VR = 10 V - minimizes quiescent current in battery-backed or ultra-low-power monitoring circuits.
Zener Voltage Tempco (γZ) +0.045 %/°C - predictable drift enables simple first-order compensation in temperature-sensitive references.

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), molded plastic case with axial leads, 2.0 mm diameter, 26.0 mm body length, 0.4 mm lead diameter, 2.4 mm lead spacing - compatible with 5 mm-pitch high-speed automatic insertion equipment.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) High-side terminal Connected to regulated positive rail; reverse-biased during normal operation to maintain fixed VZ.
2 (Anode) Low-side terminal Typically grounded or tied to lower potential; completes bias path for zener conduction.

Key Features

Feature Design Value
Low zener impedance 10 Ω max ensures tight regulation under varying load conditions in feedback loops.
B1-grade voltage tolerance ±2.3% (13.03–13.62 V) enables direct replacement in legacy 13 V reference designs without recalibration.
400 mW power rating Supports >100 mA current limiting in series-pass configurations without external heatsinking.
MHD axial package Standardized 5 mm pitch and 26 mm length allow drop-in use in existing through-hole PCB layouts.
200°C junction rating Permits operation in thermally demanding locations such as near power MOSFETs or transformers.

Applications

Industrial Power Monitoring Office Equipment Voltage Reference

Use Scenario: Monitoring 12–15 V DC bus in PLC I/O modules with analog input conditioning.

IC Role / Device Role / Timing Role: Zener diode providing stable 13.3 V reference for ADC bias and op-amp level-shifting.

Use Value: 10 Ω dynamic resistance limits reference error to <13 mV across 1 mA sensor signal swing.

Use Scenario: Regulating auxiliary 13 V rail in multifunction printer logic boards.

IC Role / Device Role / Timing Role: Shunt regulator maintaining clean supply for microcontroller reset circuitry and EEPROM interface.

Use Value: ≤0.2 μA leakage preserves standby current budget below 5 μA in sleep mode.

Test Equipment Calibration Audio Amplifier Biasing

Use Scenario: Precision voltage source in handheld multimeter front-end attenuators.

IC Role / Device Role / Timing Role: Fixed reference for autoranging DAC calibration against known 13.3 V standard.

Use Value: +0.045 %/°C tempco allows ±0.1% accuracy over 0–50°C without active compensation.

Use Scenario: Setting quiescent current in Class AB audio amplifier output stage.

IC Role / Device Role / Timing Role: Bias voltage generator for complementary transistor pair VBE multiplier network.

Use Value: 400 mW rating accommodates transient power surges during clipping without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4742A Zener voltage 12 V (±5%), rd = 9 Ω, Pd = 1 W, DO-41 package. Higher power but looser tolerance; requires PCB layout change due to longer DO-41 body (29 mm vs. 26 mm). Select when higher surge energy handling is needed and 12 V is acceptable; not suitable for B1-grade 13 V precision.
BZX79-C13 Zener voltage 13 V (±5%), rd = 30 Ω, Pd = 400 mW, DO-35 package. Same power rating but wider voltage tolerance and higher impedance; smaller DO-35 package incompatible with MHD insertion tooling. Acceptable for cost-sensitive non-precision uses; avoid where <13 mV regulation stability or MHD automation is required.

Compared with 1N4742A and BZX79-C13, the HZS13NB1TD-E provides tighter B1-grade voltage control and lower dynamic resistance in an MHD package optimized for automated assembly - making it preferable for industrial power monitoring and calibrated test equipment where 13.3 V stability and production repeatability are essential.

Availability

HZS13NB1TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, office equipment voltage reference, test equipment calibration, and audio amplifier biasing requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for HZS13NB1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and enterprise applications.

The HZS-N Series was developed as a family of precision silicon planar Zener diodes targeting stable, low-drift voltage references in cost-sensitive industrial and office electronics - emphasizing manufacturability, thermal robustness, and compatibility with high-speed automated assembly.

FAQ

What is the exact zener voltage range for HZS13NB1TD-E at 5 mA?

The HZS13NB1TD-E has a guaranteed zener voltage range of 13.03 V to 13.62 V when tested at IZ = 5 mA and Ta = 25°C. This B1-grade specification reflects ±2.3% tolerance around the nominal 13.3 V point, confirmed in Renesas document REJ03G0185-0300 Rev.3.00.

Is HZS13NB1TD-E RoHS compliant?

Yes, HZS13NB1TD-E complies with the EU RoHS Directive as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits.

What is the maximum allowable ambient temperature for continuous operation of HZS13NB1TD-E?

HZS13NB1TD-E supports continuous operation up to +85°C ambient temperature when mounted on a standard 100 × 180 × 1.6 mm paper-phenol PCB, based on the derating curve in Figure 3 of REJ03G0185-0300. At 85°C, its usable power dissipation remains at approximately 250 mW before reaching the 400 mW absolute maximum at 25°C.

Does HZS13NB1TD-E have a specified zener voltage temperature coefficient?

Yes, the HZS13NB1TD-E exhibits a zener voltage temperature coefficient of +0.045 %/°C at 13 V, as shown in Figure 2 of the official datasheet. This positive, low-drift characteristic is typical for mid-voltage Zener diodes and enables predictable behavior in temperature-varying environments.

Can HZS13NB1TD-E be used in safety-critical medical or aerospace systems?

No, HZS13NB1TD-E is classified as a Standard quality grade device per Renesas documentation and is intended only for applications such as office equipment, industrial robots, and communications gear. It is explicitly excluded from use in life-support, surgical, aerospace, or nuclear systems without prior written consent from Renesas Electronics.

HZS13NB1TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS13NB1TD-E FAQ

1.How can I place an order for HZS13NB1TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS13NB1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS13NB1TD-E reliable?

The price and inventory of HZS13NB1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS13NB1TD-E is usually 5 days.

3.What payment methods are accepted for HZS13NB1TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS13NB1TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS13NB1TD-E?

HZS13NB1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS13NB1TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS13NB1TD-E?

For technical support, including HZS13NB1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS13NB1TD-E requirements.

6.How does Aetrix verify that HZS13NB1TD-E is sourced from the original manufacturer or authorized distributors?

All HZS13NB1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS13NB1TD-E meets industry standards.

7.What is the process for return or replacement of HZS13NB1TD-E?

All HZS13NB1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS13NB1TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS13NB1TD-E part is unused and in its original packaging.

Return procedure for HZS13NB1TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZS13NB1TD-E Tags

  • HZS13NB1TD-E
  • HZS13NB1TD-E PDF
  • HZS13NB1TD-E Datasheet
  • HZS13NB1TD-E Specifications
  • HZS13NB1TD-E Images
  • Renesas
  • Renesas HZS13NB1TD-E
  • Buy HZS13NB1TD-E
  • HZS13NB1TD-E Price
  • HZS13NB1TD-E Distributor
  • HZS13NB1TD-E Supplier
  • HZS13NB1TD-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER