Renesas HZS13NB1TD-E
- Part No.:
- HZS13NB1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS13NB1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:

- Shipping:

Inventory:60,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS13NB1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 13.03–13.62 V at 5 mA, with dynamic resistance of 10 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C - enabling use in compact industrial power rails and reference circuits.
For engineers reviewing the HZS13NB1TD-E datasheet, HZS13NB1TD-E pinout, HZS13NB1TD-E application, or HZS13NB1TD-E equivalent, key selection criteria include its B1-grade zener voltage tolerance (±2.3% typical), low leakage current (≤0.2 μA at VR = 10 V), MHD package compatibility with 5 mm-pitch automated insertion, and suitability for non-safety-critical industrial and office equipment per Renesas Standard quality grade.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its zener voltage exhibits a positive temperature coefficient of +0.045 %/°C near 13 V, requiring thermal compensation only in high-precision applications. The diode is rated for continuous operation up to 200°C junction temperature and supports pulse testing per PW = 40 ms.
The HZS13NB1TD-E is optimized for stable DC biasing and overvoltage clamping in linear regulators and sensor excitation circuits. Its 10 Ω dynamic resistance ensures minimal output voltage variation under load changes up to ±1 mA, while the 400 mW power rating allows operation at ambient temperatures up to 85°C on standard FR-1 PCBs (100 × 180 × 1.6 mm).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 13.03–13.62 V at IZ = 5 mA - defines precise regulation point for feedback networks and reference generation. |
| Dynamic Resistance (rd) | 10 Ω max at IZ = 5 mA - ensures <13 mV output shift per 1 mA load change, critical for stable biasing. |
| Power Dissipation (Pd) | 400 mW max - enables use in space-constrained designs without forced cooling on standard PCBs. |
| Junction Temperature (Tj) | –55 to +200°C - supports operation in extended industrial environments including motor control enclosures. |
| Reverse Leakage (IR) | ≤0.2 μA at VR = 10 V - minimizes quiescent current in battery-backed or ultra-low-power monitoring circuits. |
| Zener Voltage Tempco (γZ) | +0.045 %/°C - predictable drift enables simple first-order compensation in temperature-sensitive references. |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), molded plastic case with axial leads, 2.0 mm diameter, 26.0 mm body length, 0.4 mm lead diameter, 2.4 mm lead spacing - compatible with 5 mm-pitch high-speed automatic insertion equipment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | High-side terminal | Connected to regulated positive rail; reverse-biased during normal operation to maintain fixed VZ. |
| 2 (Anode) | Low-side terminal | Typically grounded or tied to lower potential; completes bias path for zener conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 10 Ω max ensures tight regulation under varying load conditions in feedback loops. |
| B1-grade voltage tolerance | ±2.3% (13.03–13.62 V) enables direct replacement in legacy 13 V reference designs without recalibration. |
| 400 mW power rating | Supports >100 mA current limiting in series-pass configurations without external heatsinking. |
| MHD axial package | Standardized 5 mm pitch and 26 mm length allow drop-in use in existing through-hole PCB layouts. |
| 200°C junction rating | Permits operation in thermally demanding locations such as near power MOSFETs or transformers. |
Applications
| Industrial Power Monitoring | Office Equipment Voltage Reference |
|---|---|
Use Scenario: Monitoring 12–15 V DC bus in PLC I/O modules with analog input conditioning. IC Role / Device Role / Timing Role: Zener diode providing stable 13.3 V reference for ADC bias and op-amp level-shifting. Use Value: 10 Ω dynamic resistance limits reference error to <13 mV across 1 mA sensor signal swing. |
Use Scenario: Regulating auxiliary 13 V rail in multifunction printer logic boards. IC Role / Device Role / Timing Role: Shunt regulator maintaining clean supply for microcontroller reset circuitry and EEPROM interface. Use Value: ≤0.2 μA leakage preserves standby current budget below 5 μA in sleep mode. |
| Test Equipment Calibration | Audio Amplifier Biasing |
Use Scenario: Precision voltage source in handheld multimeter front-end attenuators. IC Role / Device Role / Timing Role: Fixed reference for autoranging DAC calibration against known 13.3 V standard. Use Value: +0.045 %/°C tempco allows ±0.1% accuracy over 0–50°C without active compensation. |
Use Scenario: Setting quiescent current in Class AB audio amplifier output stage. IC Role / Device Role / Timing Role: Bias voltage generator for complementary transistor pair VBE multiplier network. Use Value: 400 mW rating accommodates transient power surges during clipping without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A | Zener voltage 12 V (±5%), rd = 9 Ω, Pd = 1 W, DO-41 package. | Higher power but looser tolerance; requires PCB layout change due to longer DO-41 body (29 mm vs. 26 mm). | Select when higher surge energy handling is needed and 12 V is acceptable; not suitable for B1-grade 13 V precision. |
| BZX79-C13 | Zener voltage 13 V (±5%), rd = 30 Ω, Pd = 400 mW, DO-35 package. | Same power rating but wider voltage tolerance and higher impedance; smaller DO-35 package incompatible with MHD insertion tooling. | Acceptable for cost-sensitive non-precision uses; avoid where <13 mV regulation stability or MHD automation is required. |
Compared with 1N4742A and BZX79-C13, the HZS13NB1TD-E provides tighter B1-grade voltage control and lower dynamic resistance in an MHD package optimized for automated assembly - making it preferable for industrial power monitoring and calibrated test equipment where 13.3 V stability and production repeatability are essential.
Availability
HZS13NB1TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, office equipment voltage reference, test equipment calibration, and audio amplifier biasing requiring stable component supply, long-term obsolescence management, and traceable sourcing.
Supply support for HZS13NB1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and enterprise applications.
The HZS-N Series was developed as a family of precision silicon planar Zener diodes targeting stable, low-drift voltage references in cost-sensitive industrial and office electronics - emphasizing manufacturability, thermal robustness, and compatibility with high-speed automated assembly.
FAQ
What is the exact zener voltage range for HZS13NB1TD-E at 5 mA?
The HZS13NB1TD-E has a guaranteed zener voltage range of 13.03 V to 13.62 V when tested at IZ = 5 mA and Ta = 25°C. This B1-grade specification reflects ±2.3% tolerance around the nominal 13.3 V point, confirmed in Renesas document REJ03G0185-0300 Rev.3.00.
Is HZS13NB1TD-E RoHS compliant?
Yes, HZS13NB1TD-E complies with the EU RoHS Directive as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits.
What is the maximum allowable ambient temperature for continuous operation of HZS13NB1TD-E?
HZS13NB1TD-E supports continuous operation up to +85°C ambient temperature when mounted on a standard 100 × 180 × 1.6 mm paper-phenol PCB, based on the derating curve in Figure 3 of REJ03G0185-0300. At 85°C, its usable power dissipation remains at approximately 250 mW before reaching the 400 mW absolute maximum at 25°C.
Does HZS13NB1TD-E have a specified zener voltage temperature coefficient?
Yes, the HZS13NB1TD-E exhibits a zener voltage temperature coefficient of +0.045 %/°C at 13 V, as shown in Figure 2 of the official datasheet. This positive, low-drift characteristic is typical for mid-voltage Zener diodes and enables predictable behavior in temperature-varying environments.
Can HZS13NB1TD-E be used in safety-critical medical or aerospace systems?
No, HZS13NB1TD-E is classified as a Standard quality grade device per Renesas documentation and is intended only for applications such as office equipment, industrial robots, and communications gear. It is explicitly excluded from use in life-support, surgical, aerospace, or nuclear systems without prior written consent from Renesas Electronics.
HZS13NB1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS13NB1TD-E FAQ
1.How can I place an order for HZS13NB1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS13NB1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS13NB1TD-E reliable?
The price and inventory of HZS13NB1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS13NB1TD-E is usually 5 days.
3.What payment methods are accepted for HZS13NB1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS13NB1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS13NB1TD-E?
HZS13NB1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS13NB1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS13NB1TD-E?
For technical support, including HZS13NB1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS13NB1TD-E requirements.
6.How does Aetrix verify that HZS13NB1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS13NB1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS13NB1TD-E meets industry standards.
7.What is the process for return or replacement of HZS13NB1TD-E?
All HZS13NB1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS13NB1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS13NB1TD-E part is unused and in its original packaging.
Return procedure for HZS13NB1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS13NB1TD-E Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

