Renesas HZS16-1LTD-E

Overview

HZS16-1LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 15.6 V (min 15.3 V / max 15.9 V), 400 mW power dissipation, 14.0 Ω dynamic impedance at 0.5 mA test current, and −55 °C to +175 °C storage temperature range. It is used in high-stability power supplies, sensor excitation circuits, and calibration references where noise suppression and thermal stability are critical.

For engineers reviewing the HZS16-1LTD-E datasheet, HZS16-1LTD-E pinout, HZS16-1LTD-E application, or HZS16-1LTD-E equivalent, key selection criteria include zener voltage tolerance (±2%), low noise performance relative to legacy HZ series, junction temperature limit (200 °C), MHD package compatibility with 5 mm-pitch automated insertion, and suitability for industrial-grade stabilized reference designs.

Technical Context

This device operates as a two-terminal voltage reference using silicon planar Zener breakdown, with specified DC testing per JEITA standard GRZZ0002ZC-A. Its low-noise characteristic stems from optimized epitaxial layer design, achieving ~1/3–1/10 the noise level of the older HZ series.

The HZS16-1LTD-E exhibits a negative zener voltage temperature coefficient near 0.02 %/°C (≈3.1 mV/°C) at 15.6 V, confirmed by Figure 2 in REJ03G0166-0300 Rev.3.00, and maintains stable regulation under reverse bias up to 400 mW with derating above 25 °C ambient per Figure 3.

Key Specifications

Pinout & Package

The HZS16-1LTD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, epoxy-molded, 2-pin through-hole device with cathode band marking. Dimensions: φD = 2.0 mm (nom), L = 26.0 mm (nom), E = 2.4 mm (max), mass ≈ 0.084 g. Compatible with 5 mm pitch automatic insertion equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with 1N4742A and BZX84-C15, the HZS16-1LTD-E delivers superior noise performance and tighter voltage tolerance in a proven industrial through-hole package, making it the preferred choice for precision analog references where long-term stability and low drift are mandatory.

Availability

HZS16-1LTD-E is available at Aetrix Electronics and suitable for industrial power supplies, sensor excitation circuits, portable test equipment calibration, and overvoltage protection requiring stable component supply with consistent parametric performance across production lots.

Supply support for HZS16-1LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS-L Series was developed specifically for low-noise, high-stability voltage reference applications in industrial instrumentation and precision power systems-addressing limitations of earlier HZ-series diodes in noise-sensitive analog signal chains.

FAQ

What is the exact zener voltage range for HZS16-1LTD-E at 0.5 mA test current?

The HZS16-1LTD-E has a guaranteed zener voltage range of 15.3 V minimum to 15.9 V maximum when tested at I_Z = 0.5 mA, corresponding to a ±2% tolerance centered on 15.6 V. This specification is explicitly listed in the Electrical Characteristics table on page 3 of REJ03G0166-0300 Rev.3.00 and applies to every unit of HZS16-1LTD-E under standard test conditions.

Is HZS16-1LTD-E suitable for surface-mount assembly?

No, HZS16-1LTD-E uses the MHD radial-leaded through-hole package (JEITA GRZZ0002ZC-A) and is not designed for SMT reflow or pick-and-place. It requires wave soldering or hand soldering with 5 mm pitch spacing. For surface-mount alternatives, consider discrete SOD-123 or SOT-23 Zeners-but none match the HZS16-1LTD-E's low-noise specification or 15.6 V voltage grade.

Does HZS16-1LTD-E have a specified zener voltage temperature coefficient?

Yes, Figure 2 in the HZS-L Series datasheet shows the zener voltage temperature coefficient (γ_Z) for HZS16-2L (adjacent 15.7–16.5 V variant) is approximately +0.02 %/°C (≈ +3.1 mV/°C). While γ_Z is not tabulated individually for HZS16-1LTD-E, the curve confirms this value applies across the 15–16 V range, including HZS16-1LTD-E's 15.3–15.9 V band.

Can HZS16-1LTD-E replace the older HZ16B diode in existing designs?

Yes-HZS16-1LTD-E is a direct functional upgrade to HZ16B, offering identical 15–16 V zener range but with ~1/3–1/10 lower noise and improved dynamic impedance (14 Ω vs. ~25 Ω for HZ16B). No PCB changes are required as both use the MHD package and share pin 1 (cathode)/pin 2 (anode) assignment. The HZS16-1LTD-E also extends storage temperature range to +175 °C versus +150 °C for HZ16B.

What is the maximum reverse leakage current for HZS16-1LTD-E at 12 V?

The maximum reverse leakage current (I_R) for HZS16-1LTD-E is 1 μA when measured at V_R = 12.0 V, as specified in the Electrical Characteristics table on page 3 of REJ03G0166-0300 Rev.3.00. This low leakage ensures minimal current draw in high-impedance reference nodes and preserves accuracy in battery-operated or ultra-low-power systems using HZS16-1LTD-E.