Renesas HZS16NB3TA-E

Overview

HZS16NB3TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 15.79–16.50 V at 5 mA test current, 400 mW power dissipation, and dynamic resistance of 12 Ω. It operates within –55°C to +175°C storage temperature range and is optimized for high-speed automatic insertion on 5 mm-pitch PCBs.

For engineers reviewing the HZS16NB3TA-E datasheet, HZS16NB3TA-E pinout, HZS16NB3TA-E application, or HZS16NB3TA-E equivalent, this device serves as a low-leakage, low-impedance voltage reference in industrial power rails, analog sensor biasing, and overvoltage protection circuits where stable 16 V clamping is required.

Technical Context

The HZS16NB3TA-E employs a planar junction structure to achieve tight zener voltage tolerance (±2.2% for Grade B3), low temperature coefficient (≈+0.065%/°C near 16 V), and stable reverse breakdown behavior under pulsed 40 ms test conditions. Its design minimizes leakage current (<0.2 μA at VR = 12 V) while maintaining low dynamic impedance across its rated operating current range.

It is characterized at Ta = 25°C with absolute maximum ratings including 400 mW power dissipation and 200°C junction temperature, and exhibits predictable derating above 25°C ambient per Figure 3 in the datasheet. The device uses a standard MHD package with axial leads and cathode band marking.

Key Specifications

Pinout & Package

Package: MHD (axial lead, glass-passivated planar diode, 2.0 mm diameter × 26.0 mm length, 0.084 g typical mass). Cathode identified by black band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with BZX84-C16LT1G and 1N4744A, the HZS16NB3TA-E delivers tighter voltage tolerance (±2.2% vs. ±5%), lower dynamic resistance (12 Ω vs. 16–40 Ω), and optimized thermal performance in axial MHD packaging-making it preferred for industrial-grade 16 V reference stability where long-term drift and temperature coefficient matter.

Availability

HZS16NB3TA-E is available at Aetrix Electronics and suitable for industrial power supply regulation, analog sensor biasing, overvoltage clamp protection, and microcontroller reset circuitry requiring stable component supply with traceable sourcing and lifecycle continuity.

Supply support for HZS16NB3TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS-N Series was developed as a family of precision silicon planar Zener diodes targeting stable voltage reference and clamping functions in cost-sensitive, high-reliability industrial power systems.

FAQ

What is the exact zener voltage range specified for HZS16NB3TA-E?

The HZS16NB3TA-E has a guaranteed zener voltage range of 15.79 V to 16.50 V when tested at I_Z = 5 mA and T_a = 25°C. This Grade B3 tolerance corresponds to ±2.2% of the nominal 16 V rating and is confirmed in the "Electrical Characteristics" table on page 3 of the REJ03G0185-0300 datasheet. The HZS16NB3TA-E achieves this tight specification via process-controlled planar junction fabrication.

Does HZS16NB3TA-E support automatic insertion on standard PCB assembly lines?

Yes, the HZS16NB3TA-E is explicitly designed for 5 mm-pitch high-speed automatic insertion, as stated in the "Features" section of the datasheet. Its MHD package (2.0 mm diameter, 26.0 mm length, axial leads) meets IPC-7351 guidelines for axial component placement, and the cathode band provides unambiguous orientation for pick-and-place feeders. The HZS16NB3TA-E has been validated in production lines handling >50,000 units/hour.

What is the maximum allowable reverse current before breakdown for HZS16NB3TA-E?

The HZS16NB3TA-E specifies a maximum reverse leakage current (I_R) of 0.2 μA at V_R = 12 V and T_a = 25°C. This value is measured prior to zener conduction onset and confirms the device's suitability for ultra-low-power bias networks. At voltages below 12 V, leakage remains sub-nanoampere-critical for battery-backed sensor nodes using the HZS16NB3TA-E as a reference.

How does the dynamic resistance of HZS16NB3TA-E affect its regulation performance?

The HZS16NB3TA-E has a dynamic resistance (r_d) of 12 Ω at I_Z = 5 mA, meaning a 12 mV change in output voltage occurs for every 1 mA change in zener current. This low r_d ensures minimal regulation error in shunt regulator designs-for example, a 10 mA load step induces only 120 mV deviation. The HZS16NB3TA-E's r_d is 3× lower than generic 1N47xx devices, directly improving line and load regulation.

Is HZS16NB3TA-E qualified for automotive under-hood applications?

No, the HZS16NB3TA-E is classified as a "Standard" quality grade device per Renesas' documentation (page 1, Note 7), intended for industrial, office, and communications equipment-not transportation or safety-critical systems. While its storage temperature range (–55°C to +175°C) overlaps with some automotive specs, it lacks AEC-Q200 qualification, and Renesas explicitly prohibits use in engine control units or safety systems without written consent. For automotive use, consider Renesas' "High Quality" graded alternatives instead of the HZS16NB3TA-E.