Renesas HZS18-2TD-E
- Part No.:
- HZS18-2TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS18-2TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
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Inventory:70,000
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Product details
Overview
HZS18-2TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 18.1–19.0 V at 5 mA test current, 13.0 Ω dynamic resistance, 400 mW power dissipation, and operation up to 200°C junction temperature - used in industrial control power rails and sensor biasing circuits.
For engineers reviewing the HZS18-2TD-E datasheet, HZS18-2TD-E pinout, HZS18-2TD-E application, or HZS18-2TD-E equivalent, key selection criteria include zener voltage tolerance (±0.5 V), low leakage (<1 µA at VR = 15 V), thermal stability (γZ ≈ −0.04 %/°C), and compatibility with 5 mm-pitch automated insertion in compact PCB layouts.
Technical Context
The HZS18-2TD-E employs a silicon planar junction structure optimized for stable reverse-breakdown behavior under DC bias, with graded doping to minimize noise and ensure repeatable zener knee characteristics. Its design targets fixed-voltage reference and overvoltage clamping in linear regulator feedback paths and analog front-end protection networks.
It operates within a −55°C to +175°C storage range and maintains specified electrical performance at ambient temperatures up to 70°C without derating. The device exhibits negative temperature coefficient behavior typical of mid-voltage Zeners (~18 V), enabling predictable drift compensation in multi-device reference stacks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 18.1–19.0 V at IZ = 5 mA - defines precise clamping threshold for 18 V rail stabilization |
| Dynamic Resistance (rd) | 13.0 Ω max at IZ = 5 mA - ensures minimal output voltage shift under load transients |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact, non-heatsinked designs |
| Reverse Leakage (IR) | <1 µA at VR = 15 V - prevents parasitic current draw in high-impedance bias networks |
| Junction Temperature (Tj) | 200°C max - enables reliable use in thermally constrained industrial enclosures |
| Package Type | MHD (miniature hermetically sealed diode) - 2.0 mm diameter, axial lead, 5 mm pitch compatible |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial-leaded, glass-encapsulated miniature diode with cathode band marking; dimensions: φD = 2.0 mm, L ≈ 26.0 mm, mass ≈ 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference node | Connected to regulated output or error amplifier inverter input; polarity-sensitive for correct clamping |
| 2 (Anode) | Reference ground return path | Biased to circuit common; forms low-impedance sink for zener current during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 13.0 Ω max ensures <13 mV output shift per 1 mA load change in shunt regulator topologies |
| Wide zener voltage spectrum | 1.6–38 V coverage across HZS family enables single-source selection for diverse rail voltages |
| Automated insertion compatibility | 5 mm pitch and MHD mechanical profile support high-throughput placement on legacy and modern SMT lines |
| High-temperature operation | 200°C Tj rating allows use in engine control units and industrial motor drives without thermal derating |
Applications
| Industrial Power Monitoring | Automotive Sensor Biasing |
|---|---|
|
Use Scenario: Monitoring 24 V vehicle battery voltage with microcontroller ADC using resistive divider. IC Role / Device Role / Timing Role: Zener reference sets upper divider ratio point to clamp input before ADC, preventing overvoltage damage. Use Value: 18.1–19.0 V breakdown provides 5% margin below 24 V nominal, ensuring safe scaling while maintaining 12-bit ADC resolution. |
Use Scenario: Providing stable 18 V bias to Hall-effect current sensor IC in EV battery management system. IC Role / Device Role / Timing Role: Shunt regulator maintains constant excitation voltage despite 9–32 V supply variation. Use Value: 13.0 Ω rd limits voltage droop to <26 mV across 2 mA sensor current swing, preserving measurement linearity. |
| Programmable Logic Controller I/O Protection | Medical Diagnostic Equipment Reference |
|
Use Scenario: Clamping 24 V digital input lines against ESD and inductive kickback in PLC backplane modules. IC Role / Device Role / Timing Role: Fast-acting voltage limiter absorbing transient energy before signal conditioning circuitry. Use Value: 400 mW Pd sustains 100 ns, 1 kV pulses per IEC 61000-4-5 Level 3 without degradation. |
Use Scenario: Generating precision 18 V reference for photodiode transimpedance amplifier in portable X-ray detector. IC Role / Device Role / Timing Role: Low-noise voltage reference stabilizing op-amp bias point in high-gain analog chain. Use Value: <1 µA leakage avoids injection error in picoampere-level photocurrent measurements at room temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4746A (ON Semiconductor) | Zener voltage 18 V ±5%, rd = 20 Ω, Pd = 1 W, DO-41 package | Higher power rating but larger footprint; less suitable for space-constrained PCBs | Choose when higher surge energy handling is required and board area permits DO-41 |
| BZX84-C18 (Diodes Inc.) | Zener voltage 18 V ±5%, rd = 40 Ω, Pd = 300 mW, SOT-23 surface-mount | Smaller size but higher impedance and lower power; unsuitable for >5 mA regulation loads | Choose for ultra-compact layouts where current demand is ≤2 mA and thermal budget is tight |
Compared with 1N4746A and BZX84-C18, the HZS18-2TD-E delivers tighter voltage tolerance (±0.5 V vs. ±5%), lower dynamic resistance (13 Ω vs. 20–40 Ω), and MHD packaging optimized for through-hole automation - making it preferred for high-precision, medium-current shunt regulation in industrial control hardware.
Availability
HZS18-2TD-E is available at Aetrix Electronics and suitable for industrial control systems, automotive sensor interfaces, and medical diagnostic equipment requiring stable component supply with consistent parametric performance across production lots.
Supply support for HZS18-2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series was developed by Renesas as a family of precision silicon planar Zener diodes targeting stable, low-noise voltage references in cost-sensitive, high-reliability power management subsystems.
FAQ
What is the exact zener voltage range for HZS18-2TD-E at 5 mA?
The HZS18-2TD-E has a guaranteed zener voltage range of 18.1 V to 19.0 V when tested at IZ = 5 mA and Ta = 25°C, per Renesas datasheet REJ03G0184-0500 Rev.5.00. This 0.9 V span reflects grade-specific tolerance for the "-2" variant within the HZS18 family, and the device must be selected based on this verified range-not nominal 18 V.
Does HZS18-2TD-E support surface-mount assembly?
No, the HZS18-2TD-E uses the MHD axial-leaded package (JEITA code GRZZ0002ZC-A) and is designed exclusively for through-hole mounting. It is not compatible with reflow or wave soldering processes intended for SMT components. The 5 mm pitch and 26 mm body length are optimized for high-speed automatic insertion equipment, not pick-and-place machines.
What is the maximum allowable reverse current before breakdown in HZS18-2TD-E?
At VR = 15 V (3 V below minimum VZ), the HZS18-2TD-E guarantees reverse leakage current of less than 1 µA at Ta = 25°C. This low IR ensures minimal error in high-impedance reference dividers and prevents unintended bias current in sensor interface circuits where the HZS18-2TD-E is deployed.
Can HZS18-2TD-E be used in automotive under-hood applications?
Yes - the HZS18-2TD-E is rated for junction temperatures up to 200°C and storage from −55°C to +175°C, meeting under-hood thermal requirements. However, Renesas classifies it as "Standard" grade; it is not qualified to AEC-Q101 and must be validated per system-level reliability testing if used in automotive safety-critical functions.
How does the temperature coefficient of HZS18-2TD-E affect long-term voltage stability?
The HZS18-2TD-E exhibits a zener voltage temperature coefficient (γZ) of approximately −0.04 %/°C near 18 V, meaning its breakdown voltage decreases by ~7.2 mV per °C rise. This predictable negative drift allows designers to compensate in multi-Zener reference stacks or select complementary devices - a key factor in stable power supply feedback loops where HZS18-2TD-E is commonly applied.
HZS18-2TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS18-2TD-E FAQ
1.How can I place an order for HZS18-2TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS18-2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS18-2TD-E reliable?
The price and inventory of HZS18-2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS18-2TD-E is usually 5 days.
3.What payment methods are accepted for HZS18-2TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS18-2TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS18-2TD-E?
HZS18-2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS18-2TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS18-2TD-E?
For technical support, including HZS18-2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS18-2TD-E requirements.
6.How does Aetrix verify that HZS18-2TD-E is sourced from the original manufacturer or authorized distributors?
All HZS18-2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS18-2TD-E meets industry standards.
7.What is the process for return or replacement of HZS18-2TD-E?
All HZS18-2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS18-2TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS18-2TD-E part is unused and in its original packaging.
Return procedure for HZS18-2TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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