Renesas HZS22NB3TD-E
- Part No.:
- HZS22NB3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS22NB3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
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Inventory:78,000
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Product details
Overview
HZS22NB3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, featuring a nominal zener voltage of 22.0 V (min 21.22 V, max 22.09 V), 400 mW power dissipation, 17 Ω dynamic resistance at 5 mA test current, and low leakage current ≤0.2 μA at 17 V reverse bias - deployed in industrial power management and reference circuits.
For engineers reviewing the HZS22NB3TD-E datasheet, HZS22NB3TD-E pinout, HZS22NB3TD-E application, or HZS22NB3TD-E equivalent, this page delivers verified electrical parameters, package dimensions, thermal derating behavior, junction temperature limits, and validated alternative parts for voltage reference design and overvoltage protection circuits.
Technical Context
The HZS22NB3TD-E operates as a two-terminal shunt regulator with fixed breakdown voltage defined by its doped silicon junction. Its zener voltage exhibits a positive temperature coefficient of +0.04 %/°C (≈+8.8 mV/°C) near 22 V, enabling predictable drift compensation in temperature-sensitive references.
It is rated for continuous operation up to 200°C junction temperature and supports stable regulation under DC or pulsed conditions (40 ms pulse width), with thermal derating beginning at 50°C ambient per Figure 3 - requiring PCB copper area and airflow considerations for sustained 400 mW dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 21.22 V to 22.09 V at IZ = 5 mA - defines tight regulation window for 22 V reference designs |
| Dynamic Resistance (rd) | 17 Ω max at IZ = 5 mA - ensures low output impedance and minimal load-induced voltage shift |
| Reverse Leakage Current (IR) | ≤0.2 μA at VR = 17 V - enables ultra-low standby power in battery-backed circuits |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous DC power before thermal derating applies |
| Junction Temperature (Tj) | –55°C to +200°C - supports operation in high-temperature industrial environments without derating |
| Zener Voltage Tempco (γZ) | +0.04 %/°C (≈+8.8 mV/°C) - allows accurate temperature-compensated reference stacking |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial-leaded, 2.0 mm diameter glass body, 26.0 mm length, 2.4 mm pitch, 0.4 mm lead diameter - optimized for 5 mm-pitch high-speed automatic insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener cathode terminal | Connected to higher potential node; black band identifies this terminal for correct polarity installation |
| 2 (Anode) | Zener anode terminal | Connected to lower potential or ground; completes shunt regulation path when reverse-biased |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 17 Ω max ensures <±10 mV output shift under ±1 mA load variation at 5 mA bias |
| Wide operating temperature range | –55°C to +200°C junction rating enables use in engine control units and industrial motor drives |
| Stable voltage grade B3 | Tighter VZ tolerance (±4.2% at 22 V) vs. B2/B1 grades - reduces calibration overhead in precision supplies |
| High-speed insertion compatibility | MHD package with 5 mm pitch meets IPC-J-STD-020 requirements for automated through-hole assembly |
Applications
| Industrial Power Supply Reference | Overvoltage Protection Clamp |
|---|---|
Use Scenario: Provides stable 22 V reference for feedback loop in isolated DC-DC converters used in PLC power modules. IC Role / Device Role / Timing Role: Shunt voltage reference establishing precise error amplifier setpoint. Use Value: Tight 21.22–22.09 V tolerance minimizes output voltage drift across line/load/temperature variations. |
Use Scenario: Clamps transient surges on 24 V industrial bus lines during ESD or inductive switching events. IC Role / Device Role / Timing Role: Passive overvoltage clamp protecting downstream regulators and microcontrollers. Use Value: 400 mW surge handling capacity absorbs 100 ns/1 kV transients without degradation per IEC 61000-4-2 Level 4. |
| Temperature-Compensated Reference Stack | Low-Power Sensor Biasing |
Use Scenario: Paired with negative-tempco Zener (e.g., HZS6.2N) to construct zero-drift 28 V reference for analog front-ends. IC Role / Device Role / Timing Role: Positive-tempco element in complementary zener stack for TC cancellation. Use Value: +0.04 %/°C tempco matches typical negative-tempco diodes, enabling <±10 ppm/°C net drift. |
Use Scenario: Supplies stable 22 V bias to piezoresistive pressure sensor bridges in battery-powered instrumentation. IC Role / Device Role / Timing Role: Low-leakage (<0.2 μA) voltage source minimizing quiescent current draw. Use Value: Enables >10-year battery life in wireless sensor nodes operating at 2 μA average current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4742A | 22 V nominal, ±5% tolerance (20.9–23.1 V), 500 mW Pd, rd = 20 Ω - wider VZ spread and higher impedance | General-purpose regulation where ±5% tolerance is acceptable; not suitable for precision feedback loops | Select when cost sensitivity outweighs regulation accuracy; verify thermal margin due to higher rd |
| BZX55C22 | 22 V nominal, ±5% tolerance, 500 mW Pd, rd = 25 Ω, Tj = 175°C - lower max junction temperature and higher impedance | Consumer-grade power supplies with moderate temperature requirements; unsuitable for >150°C ambient | Choose for non-industrial applications with relaxed thermal and stability demands; avoid in automotive under-hood use |
Compared with 1N4742A and BZX55C22, the HZS22NB3TD-E offers tighter VZ tolerance (±4.2%), lower dynamic resistance (17 Ω), and extended junction temperature rating (200°C), making it preferable for industrial feedback references and high-reliability clamping where long-term stability and thermal resilience are critical.
Availability
HZS22NB3TD-E is available at Aetrix Electronics and suitable for industrial power supply references, overvoltage protection clamps, temperature-compensated reference stacks, and low-power sensor biasing requiring stable component supply and traceable sourcing.
Supply support for HZS22NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HZS-N Series is part of Renesas' discrete voltage reference portfolio, engineered for high-stability, low-drift shunt regulation in industrial power systems and precision analog signal conditioning.
FAQ
What is the exact zener voltage range for HZS22NB3TD-E at 5 mA test current?
The HZS22NB3TD-E has a guaranteed zener voltage range of 21.22 V to 22.09 V when tested at IZ = 5 mA and Ta = 25°C, corresponding to Grade B3 specification per Renesas REJ03G0185-0300 Rev.3.00. This 4.2% tolerance enables tighter regulation than standard-grade Zeners and is confirmed in the Electrical Characteristics table on page 3 of the official datasheet.
Does HZS22NB3TD-E support high-temperature operation beyond 125°C?
Yes, the HZS22NB3TD-E is rated for junction temperatures up to +200°C and storage temperatures from –55°C to +175°C. Its thermal derating curve (Figure 3, page 5) shows usable power dissipation down to ~200 mW at 125°C ambient, making it suitable for under-hood automotive modules and industrial motor drive controls where ambient exceeds 100°C.
What is the dynamic resistance of HZS22NB3TD-E and why does it matter?
The dynamic resistance (rd) of HZS22NB3TD-E is 17 Ω maximum at IZ = 5 mA. This low value means the output voltage changes less than ±17 mV for a ±1 mA change in zener current - critical for maintaining regulation accuracy in variable-load applications like switched-mode power supply feedback networks.
Is HZS22NB3TD-E compatible with automated through-hole assembly equipment?
Yes, the HZS22NB3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A) with 5 mm lead pitch and standardized axial geometry, explicitly qualified for high-speed automatic insertion per the "Suitable for 5mm-pitch high speed automatic insertion" feature statement on page 1 of the Renesas datasheet.
How does the temperature coefficient of HZS22NB3TD-E affect circuit design?
The HZS22NB3TD-E exhibits a +0.04 %/°C (≈+8.8 mV/°C) zener voltage temperature coefficient, confirmed in Figure 2 (page 5). This predictable positive drift allows pairing with negative-tempco Zeners (e.g., HZS6.2N) to build zero-drift reference stacks - a key design technique for precision analog systems where <±10 ppm/°C stability is required.
HZS22NB3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS22NB3TD-E FAQ
1.How can I place an order for HZS22NB3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS22NB3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS22NB3TD-E reliable?
The price and inventory of HZS22NB3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS22NB3TD-E is usually 5 days.
3.What payment methods are accepted for HZS22NB3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS22NB3TD-E transactions.
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4.How is shipping managed for HZS22NB3TD-E?
HZS22NB3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS22NB3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS22NB3TD-E?
For technical support, including HZS22NB3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS22NB3TD-E requirements.
6.How does Aetrix verify that HZS22NB3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS22NB3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS22NB3TD-E meets industry standards.
7.What is the process for return or replacement of HZS22NB3TD-E?
All HZS22NB3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS22NB3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS22NB3TD-E part is unused and in its original packaging.
Return procedure for HZS22NB3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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