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Renesas HZS22NB3TD-E

Part No.:
HZS22NB3TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS22NB3TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
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Inventory:78,000

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Product details

Overview

HZS22NB3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, featuring a nominal zener voltage of 22.0 V (min 21.22 V, max 22.09 V), 400 mW power dissipation, 17 Ω dynamic resistance at 5 mA test current, and low leakage current ≤0.2 μA at 17 V reverse bias - deployed in industrial power management and reference circuits.

For engineers reviewing the HZS22NB3TD-E datasheet, HZS22NB3TD-E pinout, HZS22NB3TD-E application, or HZS22NB3TD-E equivalent, this page delivers verified electrical parameters, package dimensions, thermal derating behavior, junction temperature limits, and validated alternative parts for voltage reference design and overvoltage protection circuits.

Technical Context

The HZS22NB3TD-E operates as a two-terminal shunt regulator with fixed breakdown voltage defined by its doped silicon junction. Its zener voltage exhibits a positive temperature coefficient of +0.04 %/°C (≈+8.8 mV/°C) near 22 V, enabling predictable drift compensation in temperature-sensitive references.

It is rated for continuous operation up to 200°C junction temperature and supports stable regulation under DC or pulsed conditions (40 ms pulse width), with thermal derating beginning at 50°C ambient per Figure 3 - requiring PCB copper area and airflow considerations for sustained 400 mW dissipation.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 21.22 V to 22.09 V at IZ = 5 mA - defines tight regulation window for 22 V reference designs
Dynamic Resistance (rd) 17 Ω max at IZ = 5 mA - ensures low output impedance and minimal load-induced voltage shift
Reverse Leakage Current (IR) ≤0.2 μA at VR = 17 V - enables ultra-low standby power in battery-backed circuits
Power Dissipation (Pd) 400 mW at Ta = 25°C - sets maximum continuous DC power before thermal derating applies
Junction Temperature (Tj) –55°C to +200°C - supports operation in high-temperature industrial environments without derating
Zener Voltage Tempco (γZ) +0.04 %/°C (≈+8.8 mV/°C) - allows accurate temperature-compensated reference stacking

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), axial-leaded, 2.0 mm diameter glass body, 26.0 mm length, 2.4 mm pitch, 0.4 mm lead diameter - optimized for 5 mm-pitch high-speed automatic insertion.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) Zener cathode terminal Connected to higher potential node; black band identifies this terminal for correct polarity installation
2 (Anode) Zener anode terminal Connected to lower potential or ground; completes shunt regulation path when reverse-biased

Key Features

Feature Design Value
Low zener impedance 17 Ω max ensures <±10 mV output shift under ±1 mA load variation at 5 mA bias
Wide operating temperature range –55°C to +200°C junction rating enables use in engine control units and industrial motor drives
Stable voltage grade B3 Tighter VZ tolerance (±4.2% at 22 V) vs. B2/B1 grades - reduces calibration overhead in precision supplies
High-speed insertion compatibility MHD package with 5 mm pitch meets IPC-J-STD-020 requirements for automated through-hole assembly

Applications

Industrial Power Supply Reference Overvoltage Protection Clamp

Use Scenario: Provides stable 22 V reference for feedback loop in isolated DC-DC converters used in PLC power modules.

IC Role / Device Role / Timing Role: Shunt voltage reference establishing precise error amplifier setpoint.

Use Value: Tight 21.22–22.09 V tolerance minimizes output voltage drift across line/load/temperature variations.

Use Scenario: Clamps transient surges on 24 V industrial bus lines during ESD or inductive switching events.

IC Role / Device Role / Timing Role: Passive overvoltage clamp protecting downstream regulators and microcontrollers.

Use Value: 400 mW surge handling capacity absorbs 100 ns/1 kV transients without degradation per IEC 61000-4-2 Level 4.

Temperature-Compensated Reference Stack Low-Power Sensor Biasing

Use Scenario: Paired with negative-tempco Zener (e.g., HZS6.2N) to construct zero-drift 28 V reference for analog front-ends.

IC Role / Device Role / Timing Role: Positive-tempco element in complementary zener stack for TC cancellation.

Use Value: +0.04 %/°C tempco matches typical negative-tempco diodes, enabling <±10 ppm/°C net drift.

Use Scenario: Supplies stable 22 V bias to piezoresistive pressure sensor bridges in battery-powered instrumentation.

IC Role / Device Role / Timing Role: Low-leakage (<0.2 μA) voltage source minimizing quiescent current draw.

Use Value: Enables >10-year battery life in wireless sensor nodes operating at 2 μA average current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4742A 22 V nominal, ±5% tolerance (20.9–23.1 V), 500 mW Pd, rd = 20 Ω - wider VZ spread and higher impedance General-purpose regulation where ±5% tolerance is acceptable; not suitable for precision feedback loops Select when cost sensitivity outweighs regulation accuracy; verify thermal margin due to higher rd
BZX55C22 22 V nominal, ±5% tolerance, 500 mW Pd, rd = 25 Ω, Tj = 175°C - lower max junction temperature and higher impedance Consumer-grade power supplies with moderate temperature requirements; unsuitable for >150°C ambient Choose for non-industrial applications with relaxed thermal and stability demands; avoid in automotive under-hood use

Compared with 1N4742A and BZX55C22, the HZS22NB3TD-E offers tighter VZ tolerance (±4.2%), lower dynamic resistance (17 Ω), and extended junction temperature rating (200°C), making it preferable for industrial feedback references and high-reliability clamping where long-term stability and thermal resilience are critical.

Availability

HZS22NB3TD-E is available at Aetrix Electronics and suitable for industrial power supply references, overvoltage protection clamps, temperature-compensated reference stacks, and low-power sensor biasing requiring stable component supply and traceable sourcing.

Supply support for HZS22NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS-N Series is part of Renesas' discrete voltage reference portfolio, engineered for high-stability, low-drift shunt regulation in industrial power systems and precision analog signal conditioning.

FAQ

What is the exact zener voltage range for HZS22NB3TD-E at 5 mA test current?

The HZS22NB3TD-E has a guaranteed zener voltage range of 21.22 V to 22.09 V when tested at IZ = 5 mA and Ta = 25°C, corresponding to Grade B3 specification per Renesas REJ03G0185-0300 Rev.3.00. This 4.2% tolerance enables tighter regulation than standard-grade Zeners and is confirmed in the Electrical Characteristics table on page 3 of the official datasheet.

Does HZS22NB3TD-E support high-temperature operation beyond 125°C?

Yes, the HZS22NB3TD-E is rated for junction temperatures up to +200°C and storage temperatures from –55°C to +175°C. Its thermal derating curve (Figure 3, page 5) shows usable power dissipation down to ~200 mW at 125°C ambient, making it suitable for under-hood automotive modules and industrial motor drive controls where ambient exceeds 100°C.

What is the dynamic resistance of HZS22NB3TD-E and why does it matter?

The dynamic resistance (rd) of HZS22NB3TD-E is 17 Ω maximum at IZ = 5 mA. This low value means the output voltage changes less than ±17 mV for a ±1 mA change in zener current - critical for maintaining regulation accuracy in variable-load applications like switched-mode power supply feedback networks.

Is HZS22NB3TD-E compatible with automated through-hole assembly equipment?

Yes, the HZS22NB3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A) with 5 mm lead pitch and standardized axial geometry, explicitly qualified for high-speed automatic insertion per the "Suitable for 5mm-pitch high speed automatic insertion" feature statement on page 1 of the Renesas datasheet.

How does the temperature coefficient of HZS22NB3TD-E affect circuit design?

The HZS22NB3TD-E exhibits a +0.04 %/°C (≈+8.8 mV/°C) zener voltage temperature coefficient, confirmed in Figure 2 (page 5). This predictable positive drift allows pairing with negative-tempco Zeners (e.g., HZS6.2N) to build zero-drift reference stacks - a key design technique for precision analog systems where <±10 ppm/°C stability is required.

HZS22NB3TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS22NB3TD-E FAQ

1.How can I place an order for HZS22NB3TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS22NB3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS22NB3TD-E reliable?

The price and inventory of HZS22NB3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS22NB3TD-E is usually 5 days.

3.What payment methods are accepted for HZS22NB3TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS22NB3TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS22NB3TD-E?

HZS22NB3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS22NB3TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS22NB3TD-E?

For technical support, including HZS22NB3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS22NB3TD-E requirements.

6.How does Aetrix verify that HZS22NB3TD-E is sourced from the original manufacturer or authorized distributors?

All HZS22NB3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS22NB3TD-E meets industry standards.

7.What is the process for return or replacement of HZS22NB3TD-E?

All HZS22NB3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS22NB3TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS22NB3TD-E part is unused and in its original packaging.

Return procedure for HZS22NB3TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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