Renesas HZS24-3LTD-E

Overview

HZS24-3LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 24.3–25.5 V at 0.5 mA test current, 120 Ω dynamic resistance, 400 mW power dissipation, and −55 to +175 °C storage temperature range. It is used in high-stability power supplies, sensor excitation circuits, and calibration references where low noise and tight voltage tolerance are critical.

For engineers reviewing the HZS24-3LTD-E datasheet, HZS24-3LTD-E pinout, HZS24-3LTD-E application, or HZS24-3LTD-E equivalent, key selection criteria include zener voltage tolerance (±2.5% at 24.9 V nominal), low noise performance (≈1/3–1/10 that of legacy HZ series), junction temperature limit (200 °C), and compatibility with 5 mm-pitch automated insertion.

Technical Context

This device operates as a two-terminal voltage reference using silicon planar Zener breakdown, with specified DC testing conditions and guaranteed performance at 0.5 mA zener current. Its low dynamic impedance (120 Ω max) and low leakage current (<1 μA at VR = 20 V) support stable regulation under light-load and low-power conditions.

The HZS24-3LTD-E belongs to the HZS-L Series characterized by reduced diode noise, wide zener voltage range (5.2–38 V), and MHD package suitability for high-speed automatic assembly. Temperature coefficient data shows γZ ≈ −0.04 %/°C near 24 V, indicating negative drift with rising temperature.

Key Specifications

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), axial leaded, 2.0 mm diameter body, 26.0 mm length, 0.4 mm lead diameter, 2.4 mm lead spacing, 0.084 g typical mass. Designed for 5 mm-pitch high-speed automatic insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMBZ5242B and BZX84-C24, the HZS24-3LTD-E delivers higher power handling (400 mW), tighter voltage tolerance (±2.5% vs ±5%), lower noise, and through-hole MHD packaging - making it uniquely suited for industrial-grade 24 V reference and stabilization where reliability and signal integrity are prioritized.

Availability

HZS24-3LTD-E is available at Aetrix Electronics and suitable for industrial power monitoring, high-resolution sensor excitation, calibration reference sources, and embedded system reset threshold applications requiring stable component supply across long-lifecycle production programs.

Supply support for HZS24-3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS-L Series was developed by Renesas specifically for low-noise, high-stability voltage reference applications in industrial power supplies and precision analog systems - emphasizing reduced diode noise, tight zener tolerance, and automated assembly compatibility.

FAQ

What is the nominal zener voltage of the HZS24-3LTD-E and how is it tested?

The HZS24-3LTD-E has a nominal zener voltage of 24.9 V, with a guaranteed range of 24.3 V to 25.5 V when tested at I_Z = 0.5 mA using DC current. This specification is verified per Renesas REJ03G0166-0300 Rev.3.00, and the device is characterized under strictly controlled 25 °C ambient conditions. The HZS24-3LTD-E must be operated within its absolute maximum ratings to maintain this voltage accuracy.

Does the HZS24-3LTD-E have a specified temperature coefficient, and what is its impact?

Yes - the HZS24-3LTD-E exhibits a zener voltage temperature coefficient (γ_Z) of approximately −0.04 %/°C near 24 V, as shown in Figure 2 of the Renesas datasheet. This negative drift means the zener voltage decreases by ~10 mV per 10 °C rise above 25 °C. Designers must account for this in high-precision references; the HZS24-3LTD-E remains stable within its 200 °C junction limit but requires thermal modeling for sub-0.1% accuracy.

Can the HZS24-3LTD-E be used in surface-mount designs?

No - the HZS24-3LTD-E uses the MHD axial-leaded package (JEITA GRZZ0002ZC-A), designed explicitly for through-hole mounting and 5 mm-pitch automatic insertion. It is not compatible with SMT reflow or pick-and-place processes. For surface-mount alternatives, engineers should evaluate other families such as Renesas' HZM series or third-party SOT-23 Zeners - but none replicate the HZS24-3LTD-E's low-noise performance and 400 mW rating in SMT form.

What is the maximum allowable reverse leakage current for the HZS24-3LTD-E?

The HZS24-3LTD-E specifies a maximum reverse leakage current (I_R) of 1 μA at V_R = 20 V and T_a = 25 °C. This low leakage supports ultra-low-power applications such as battery-backed sensor nodes and energy-harvesting systems. Exceeding 20 V reverse bias or operating above 25 °C will increase leakage; designers should consult the full I_R vs. V_R curve in the Renesas datasheet to verify behavior under actual operating conditions.

Is the HZS24-3LTD-E suitable for automotive applications?

The HZS24-3LTD-E is classified as a "Standard" quality grade device per Renesas documentation and is intended for computers, office equipment, industrial robots, and communications equipment - not for automotive or safety-critical systems. It lacks AEC-Q200 qualification, and Renesas explicitly states that products not designated for automotive use must not be deployed in vehicles without prior written consent. For automotive-grade 24 V Zener references, alternate qualified parts must be selected.