Renesas HZS2A3TD-E

Overview

HZS2A3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 1.8 V (min 1.8 V, max 2.0 V) at 5 mA test current, with low dynamic resistance of 100 Ω, 400 mW power dissipation, and operates across −55°C to +175°C storage temperature range - used in voltage reference circuits for sensor signal conditioning.

For engineers reviewing the HZS2A3TD-E datasheet, HZS2A3TD-E pinout, HZS2A3TD-E application, or HZS2A3TD-E equivalent, this part serves as a surface-mount, low-leakage, low-impedance voltage reference in space-constrained industrial control modules, analog front-end biasing networks, and embedded power monitor ICs requiring stable sub-2V regulation.

Technical Context

The HZS2A3TD-E employs a silicon planar junction structure optimized for stable DC zener operation with minimal temperature drift below 2 V. Its low leakage current (≤25 µA at VR = 0.5 V) and controlled dynamic impedance support tight regulation in low-current feedback paths.

This device belongs to the HZS Series' A3 grade variant, specified for 1.8–2.0 V nominal output at 5 mA, and shares the MHD package's standardized 5 mm pitch for high-speed automated insertion - consistent with Renesas' legacy industrial-grade discrete portfolio.

Key Specifications

Pinout & Package

Package: MHD - molded plastic case with axial leads, 5 mm lead pitch, 2.0 mm body diameter, 26 mm lead length, 0.4 mm lead diameter, mass ≈ 0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX55C1V8 and MMSZ4678, the HZS2A3TD-E offers balanced performance: tighter 1.8–2.0 V tolerance than MMSZ4678, superior 100 Ω impedance vs. BZX55C1V8's 150 Ω, and MHD packaging optimized for automated through-hole assembly - making it optimal for cost-sensitive industrial control boards requiring repeatable 1.8 V references.

Availability

HZS2A3TD-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, embedded power monitoring circuits, and low-power analog front-end biasing requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZS2A3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS Series was developed by Renesas as a family of silicon planar Zener diodes targeting cost-effective, high-reliability voltage stabilization in industrial power supplies and analog signal chains - emphasizing low leakage, tight tolerance grades, and automated assembly compatibility.

FAQ

What is the exact zener voltage range for HZS2A3TD-E at 5 mA?

The HZS2A3TD-E has a guaranteed zener voltage range of 1.8 V minimum to 2.0 V maximum when tested at I_Z = 5 mA and T_a = 25°C. This A3 grade specification ensures consistent low-voltage reference behavior across production lots and supports accurate calibration in analog circuits where sub-2V stability is required. The HZS2A3TD-E maintains this tolerance without derating up to its full 200°C junction temperature limit.

Is HZS2A3TD-E suitable for surface-mount assembly?

No - the HZS2A3TD-E uses the MHD package, which is an axial-lead through-hole configuration with 5 mm lead pitch and 26 mm lead length. It is explicitly designed for high-speed automatic insertion into plated-through holes, not reflow soldering on SMT pads. For surface-mount equivalents, consider SOD-123 or SOD-323 packaged Zeners like MMSZ4678; the HZS2A3TD-E requires wave or selective soldering processes compatible with axial components.

What is the maximum reverse leakage current for HZS2A3TD-E?

The HZS2A3TD-E specifies a maximum reverse leakage current (I_R) of 25 µA at V_R = 0.5 V and T_a = 25°C. This low leakage supports high-impedance reference node applications such as precision ADC biasing and op-amp input stages where even nanoamp-level currents could introduce measurable offset errors. The HZS2A3TD-E maintains this performance across its full operating temperature range without additional derating.

Does HZS2A3TD-E have a defined temperature coefficient?

The HZS2A3TD-E does not publish a specific temperature coefficient (γ_Z) value in its datasheet, as low-voltage Zeners (<2.4 V) exhibit negative temperature coefficients that vary significantly with current and process. However, Figure 2 in the HZS Series datasheet shows typical γ_Z for 1.6–2.4 V devices ranges from −30 to −50 mV/°C. Designers should account for this drift in applications requiring stable reference over wide temperature spans - the HZS2A3TD-E is best suited for ambient-stable or compensated circuits.

Can HZS2A3TD-E replace older NEC-brand Zener diodes?

Yes - the HZS2A3TD-E is a direct continuation of the original NEC Electronics HZS Series, maintained after the 2010 merger into Renesas Electronics. All electrical specifications, package dimensions (MHD), and marking (lake blue cathode band) remain identical to the legacy NEC part. Renesas explicitly confirms backward compatibility in its documentation, and the HZS2A3TD-E carries the same GRZZ0002ZC-A JEITA code and RENESAS Code as the prior NEC version - ensuring seamless drop-in replacement in existing designs.