Renesas HZS2B2TA-E

Overview

HZS2B2TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 2.0 V (min 1.9 V, max 2.1 V), 400 mW power dissipation, and dynamic resistance of ≤100 Ω at 5 mA test current. It operates within −55°C to +175°C storage range and supports high-speed automatic insertion on 5 mm-pitch PCBs.

For engineers reviewing the HZS2B2TA-E datasheet, HZS2B2TA-E pinout, HZS2B2TA-E application, or HZS2B2TA-E equivalent, this device serves as a low-leakage, low-impedance voltage reference in analog sensor biasing, microcontroller reset circuits, and low-voltage LDO feedback networks where tight tolerance and thermal stability are required.

Technical Context

The HZS2B2TA-E employs a silicon planar junction structure optimized for stable reverse breakdown behavior under DC conditions. Its zener voltage is specified at 5 mA test current with ±0.1 V tolerance (Grade B2), and it exhibits low leakage current (≤25 µA at VR = 0.5 V) and controlled temperature coefficient near zero crossing (~0 mV/°C at ~2 V).

Designed for surface-mount compatibility in MHD package (JEITA GRZZ0002ZC-A), the device features cathode-anode terminal configuration with lake-blue cathode band marking. It is rated for junction temperatures up to 200°C and conforms to Renesas' "Standard" quality grade for industrial and consumer applications.

Key Specifications

Pinout & Package

MHD package: axial-lead, 2-pin, epoxy-molded, lake-blue cathode band marking, mass ≈ 0.084 g, dimensions per JEITA GRZZ0002ZC-A (L = 26.0 mm, φD = 2.0 mm, E = 2.4 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4728A and BZX55C2V0, the HZS2B2TA-E delivers tighter voltage tolerance (±0.1 V), lower leakage (≤25 µA), and MHD package compatibility for automated insertion-making it preferable for precision low-voltage reference and high-reliability industrial PCB assembly.

Availability

HZS2B2TA-E is available at Aetrix Electronics and suitable for microcontroller reset circuits, analog sensor biasing, LDO feedback networks, USB overvoltage protection, and industrial power monitoring requiring stable component supply and long-term manufacturability.

Supply support for HZS2B2TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and consumer markets.

The HZS Series belongs to Renesas' legacy discrete diode product line, engineered specifically for high-stability voltage reference and regulation in cost-sensitive, high-volume power management applications.

FAQ

What is the exact zener voltage range for HZS2B2TA-E at 5 mA test current?

The HZS2B2TA-E has a guaranteed zener voltage range of 1.9 V to 2.1 V when tested at I_Z = 5 mA and T_a = 25°C. This Grade B2 tolerance (±0.1 V) is tighter than standard 5% Zeners and supports precision analog and reset circuit design where voltage accuracy directly impacts system reliability. The HZS2B2TA-E maintains this specification across its qualified operating temperature range.

Is HZS2B2TA-E suitable for surface-mount assembly?

No - the HZS2B2TA-E uses the MHD package (JEITA GRZZ0002ZC-A), which is an axial-lead through-hole package with 26 mm body length and 2.0 mm diameter. It is explicitly designed for high-speed automatic insertion on 5 mm-pitch PCBs, not reflow soldering. For SMT alternatives, consider Renesas' HZ3 series or other SOD-123 packaged Zeners - the HZS2B2TA-E requires wave or selective soldering processes.

What is the maximum reverse leakage current for HZS2B2TA-E, and under what condition is it measured?

The HZS2B2TA-E specifies a maximum reverse leakage current (I_R) of 25 µA, measured at V_R = 0.5 V and T_a = 25°C. This low leakage supports high-impedance applications such as precision voltage dividers and battery-monitoring circuits where parasitic current paths must be minimized. The value is confirmed in the official Renesas REJ03G0184-0500 datasheet, Page 2, Electrical Characteristics table.

Does HZS2B2TA-E have a specified temperature coefficient, and how does it affect performance?

Yes - the HZS2B2TA-E exhibits a zener voltage temperature coefficient (γ_Z) near zero (≈0 mV/°C) at its 2.0 V operating point, as shown in Figure 2 of the Renesas datasheet. This characteristic minimizes drift over temperature, enabling stable reference performance in unregulated environments. For example, over −40°C to +85°C, total V_Z shift remains within ±0.03 V - critical for applications like sensor excitation where offset error must stay below 1.5%.

Can HZS2B2TA-E replace a 2.0 V TL431-based shunt regulator in low-current applications?

The HZS2B2TA-E can serve as a passive replacement for TL431 in simple shunt reference roles where active regulation and adjustable output are unnecessary. With its 2.0 V nominal V_Z, ≤100 Ω dynamic resistance, and 400 mW rating, the HZS2B2TA-E provides adequate stability for loads drawing ≤10 mA. However, unlike TL431, it lacks internal amplification or current-sinking capability - so the HZS2B2TA-E is best applied in fixed-voltage, low-power bias or clamping functions, not closed-loop regulation.