Renesas HZS2BLLTA-E

Overview

HZS2BLLTA-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low current (IZ = 1 nA to 1 mA), with a nominal zener voltage of 2.1 V (min 1.9 V, max 2.3 V), dynamic impedance of 350 Ω at IZT = 0.5 mA, and temperature coefficient of –1.5 mV/°C - used in precision analog front-ends and sensor biasing circuits.

For engineers reviewing the HZS2BLLTA-E datasheet, HZS2BLLTA-E pinout, HZS2BLLTA-E application, or HZS2BLLTA-E equivalent, key selection criteria include its sharp breakdown knee at sub-mA currents, low noise performance (~1/10 that of standard zeners), MHD package compatibility with 5 mm-pitch automated insertion, and suitability for stable low-power reference design where thermal drift and dynamic impedance directly impact ADC reference accuracy.

Technical Context

The HZS2BLLTA-E employs a silicon planar junction structure engineered to deliver semilogarithmic linear Vz–Iz characteristics across an ultra-low current range (1 nA to 1 mA), enabling stable regulation even in micro-power systems. Its hard-knee behavior minimizes transition-region uncertainty during startup or standby modes.

It exhibits a negative zener voltage temperature coefficient of –1.5 mV/°C at 2.1 V, optimized for minimal drift near room temperature, and achieves low dynamic impedance (350 Ω typ. at 0.5 mA) without requiring high bias current - critical for battery-powered instrumentation and sensor signal conditioning.

Key Specifications

Pinout & Package

The HZS2BLLTA-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial leaded, epoxy-molded case with 2.0 mm diameter body and 2.4 mm pitch, designed for 5 mm-pitch high-speed automatic insertion and compatible with paper-phenol PCBs (100 × 180 × 1.6t mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with BZX84-C2V4LT1G and MMSZ4684T1G, the HZS2BLLTA-E delivers superior low-current regulation fidelity, lower noise, and tighter V_Z tolerance - making it the preferred choice for metrology-grade analog signal chains where reference integrity directly determines measurement resolution.

Availability

HZS2BLLTA-E is available at Aetrix Electronics and suitable for industrial sensor biasing, portable instrumentation reference, and medical front-end calibration requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for HZS2BLLTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for industrial, automotive, and enterprise applications, with headquarters in Tokyo and design centers worldwide.

The HZS-LL Series was developed specifically for precision low-noise voltage reference applications demanding hard-knee breakdown and stable low-current operation - targeting high-resolution data acquisition, sensor excitation, and calibration-critical analog subsystems.

FAQ

What is the exact zener voltage range for HZS2BLLTA-E at 0.5 mA test current?

The HZS2BLLTA-E has a specified zener voltage range of 1.9 V minimum to 2.3 V maximum when measured at I_Z = 0.5 mA, with a typical value of 2.1 V. This tight 0.4 V span supports high-accuracy voltage referencing in circuits where headroom is constrained, such as 3.3 V or 2.5 V rail systems. The HZS2BLLTA-E's guaranteed limits ensure consistent performance across production lots without binning.

Does HZS2BLLTA-E support operation below 1 µA, and what is its behavior in that region?

Yes, the HZS2BLLTA-E is characterized down to 1 nA and maintains semilogarithmic linear V_Z–I_Z behavior from 1 nA to 1 mA - a defining feature of the HZS-LL Series. At 100 nA, V_Z shifts less than 15 mV from its 0.5 mA value, enabling reliable use in nano-power sensor biasing and wake-up circuitry. This performance is confirmed in Figure 1 of the REJ03G0167-0300 datasheet for HZS2BLLTA-E.

What is the thermal performance of HZS2BLLTA-E, and how does its temperature coefficient affect system accuracy?

The HZS2BLLTA-E has a zener voltage temperature coefficient of –1.5 mV/°C at 25°C, resulting in approximately –0.15 %/°C drift around its 2.1 V nominal voltage. Over a –40°C to +85°C range, total V_Z shift is ≤ ±180 mV - well within tolerance for most industrial sensor interfaces. Its 175°C maximum junction temperature further ensures reliability in thermally stressed PCB locations.

Is HZS2BLLTA-E RoHS compliant and suitable for modern automated assembly processes?

Yes, HZS2BLLTA-E is RoHS compliant (lead-free terminations, compliant with EU Directive 2011/65/EU) and packaged in the MHD format - explicitly qualified for 5 mm-pitch high-speed automatic insertion per the REJ03G0167-0300 datasheet. Its 2.0 mm body diameter and 2.4 mm lead pitch meet IPC-7351B footprint standards for surface-mount-compatible through-hole placement.

How does the noise performance of HZS2BLLTA-E compare to standard zener diodes, and where is this advantage most impactful?

The HZS2BLLTA-E delivers approximately 1/10 the noise of conventional zener diodes in the 10 Hz–10 kHz band, due to its optimized planar junction and hard-knee design. This advantage is critical in high-resolution (≥16-bit) analog-to-digital conversion, low-level sensor signal amplification, and precision voltage reference buffers - where reference noise directly limits effective resolution and measurement repeatability.