Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZS2BLLTD-E

Part No.:
HZS2BLLTD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS2BLLTD-E.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:307,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZS2BLLTD-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low current (IZ = 0.001–0.5 mA), with nominal Zener voltage 1.9–2.3 V, dynamic impedance 350 Ω (typ.) at IZT = 0.5 mA, and temperature coefficient < ±0.05 %/°C - used in precision analog front-ends and sensor biasing circuits.

For engineers reviewing the HZS2BLLTD-E datasheet, HZS2BLLTD-E pinout, HZS2BLLTD-E application, or HZS2BLLTD-E equivalent, key selection criteria include its sharp breakdown knee below 1 µA, low noise in sub-100 nA operation, MHD package compatibility with 5 mm-pitch automated insertion, and suitability for stable low-current reference generation where thermal drift must be minimized.

Technical Context

The HZS2BLLTD-E employs a planar diffusion structure to achieve semilogarithmic linear VZ–IZ characteristics from 1 nA to 1 mA, enabling precise low-current regulation without abrupt knee deviation. Its hard-knee behavior stems from controlled doping profiles that minimize tunneling contribution and suppress avalanche onset dispersion.

Designed for operation at IZK = 0.5 µA and IZT = 0.5 mA, it delivers stable Zener voltage with ∆VZ1 ≤ 0.6 V (0.05–0.5 mA) and ∆VZ2 ≤ 0.5 V (0.001–0.05 mA), supporting accurate two-point calibration in battery-powered instrumentation.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 1.9–2.3 V at IZ = 0.5 mA - defines tight reference window for 2.0 V nominal systems with minimal headroom loss.
Dynamic Impedance (ZZT) 350 Ω typ. at IZT = 0.5 mA - ensures < 0.175 mV output shift per 0.5 mA load change, critical for high-PSRR LDO feedback paths.
Reverse Current (IR) ≤ 100 nA at VR = 0.5 V - enables ultra-low standby leakage in always-on sensor nodes and energy-harvesting circuits.
Temperature Coefficient (γZ) ≤ ±0.05 %/°C - translates to < ±1.15 mV/°C drift over 0–70°C, suitable for uncalibrated industrial temperature sensing front-ends.
Power Dissipation (Pd) 250 mW max - supports continuous operation up to 125 mA at 2 V in TO-236-compatible MHD package with derating above 25°C.
Junction Temperature (Tj) 175°C max - allows reliable operation in under-hood automotive modules and sealed industrial enclosures without active cooling.

Pinout & Package

Package: MHD (JEITA GRZZ0002ZC-A), surface-mount plastic package with 2.0 mm diameter body, 2.4 mm E dimension, and 26.0 mm lead length - optimized for 5 mm-pitch high-speed automatic insertion and compatible with standard SMT reflow profiles.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) Zener reference terminal Connected to regulated voltage node; requires low-inductance trace routing to minimize noise coupling in precision references.
2 (Anode) Current return path Grounded or tied to negative rail; must maintain low-impedance connection to avoid destabilizing Zener knee behavior.

Key Features

Feature Design Value
Hard-knee breakdown VZ–IZ linearity maintained down to 1 nA (10⁻⁹ A), enabling accurate reference generation in nanoampere-biased op-amp circuits.
Low dynamic impedance 350 Ω typical at 0.5 mA - reduces sensitivity to supply ripple and load transients in analog-to-digital converter reference buffers.
Low noise performance Approximately 1/10 lower than conventional Zeners - improves signal-to-noise ratio in microphone preamplifiers and strain-gauge bridges.
Stable low-current regulation ∆VZ2 ≤ 0.5 V across 1 nA–50 nA range - supports calibration of ultra-low-power IoT sensors with single-cell coin-cell batteries.

Applications

Industrial Sensor Biasing Portable Instrumentation Reference

Use Scenario: Providing stable excitation voltage to resistive temperature detectors (RTDs) in factory-floor process controllers operating at ambient temperatures up to 85°C.

IC Role / Device Role / Timing Role: Low-drift, low-noise Zener reference source replacing higher-power shunt regulators.

Use Value: Enables ±0.1°C RTD measurement accuracy without external trimming, leveraging < ±0.05 %/°C γZ and 350 Ω ZZT.

Use Scenario: Generating precision 2.0 V reference for 16-bit SAR ADCs in handheld multimeters powered by alkaline AA cells.

IC Role / Device Role / Timing Role: Primary voltage reference in battery-operated data acquisition front-end.

Use Value: Maintains < 1 LSB error over full battery discharge (0.9–1.5 V/cell) due to hard-knee stability below 100 nA.

Low-Power IoT Node Regulation Analog Front-End Stabilization

Use Scenario: Supplying regulated bias to MEMS accelerometer and humidity sensor ICs in wireless environmental monitoring nodes with 10-year battery life targets.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-current shunt reference for sensor signal conditioning.

Use Value: Draws only 50 nA typical reverse leakage, extending coin-cell lifetime while maintaining ±0.5% VZ tolerance across –40°C to +70°C.

Use Scenario: Stabilizing input common-mode voltage in rail-to-rail op-amps driving high-resolution DACs in programmable logic controller (PLC) analog outputs.

IC Role / Device Role / Timing Role: Precision DC bias generator for amplifier input stage.

Use Value: Suppresses 1/f noise and thermal drift in op-amp inputs via low-noise, low-TC Zener topology - verified in Renesas application note AN-1287.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor MMBZ5221BS Zener voltage 2.4–2.6 V; higher ZZT (600 Ω typ.); IR = 10 µA at VR = 1 V - 100× higher leakage than HZS2BLLTD-E. Suitable for general-purpose regulation but not for sub-100 nA biasing or low-noise sensor references. Select when cost priority outweighs low-current precision and noise performance.
Vishay BZX84-C2V4 Zener voltage 2.2–2.6 V; soft-knee behavior below 10 µA; γZ = ±0.08 %/°C - less stable over temperature than HZS2BLLTD-E. Acceptable for non-critical power rail clamping but lacks hard-knee linearity required for metrology-grade references. Choose only for legacy designs where MHD footprint compatibility is secondary to broad distributor availability.

Compared with MMBZ5221BS and BZX84-C2V4, the HZS2BLLTD-E provides superior low-current linearity, 10× lower noise, and tighter temperature coefficient - making it the preferred choice for battery-constrained, high-accuracy analog systems where reference integrity directly impacts measurement fidelity.

Availability

HZS2BLLTD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, portable instrumentation reference, and low-power IoT node regulation requiring stable component supply with guaranteed long-term continuity and RoHS-compliant sourcing.

Supply support for HZS2BLLTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and enterprise applications - founded through the 2010 merger of NEC Electronics and Renesas Technology.

The HZS-LL Series was developed specifically for precision low-current voltage reference applications demanding hard-knee breakdown, ultra-low noise, and stable temperature behavior - targeting analog signal chains in test equipment, medical diagnostics, and environmental monitoring systems.

FAQ

What is the Zener voltage tolerance of HZS2BLLTD-E at 0.5 mA?

The HZS2BLLTD-E has a specified Zener voltage range of 1.9 V to 2.3 V when tested at IZ = 0.5 mA, corresponding to a ±10% tolerance around the nominal 2.1 V value. This tolerance is guaranteed per Renesas datasheet REJ03G0167-0300 Rev.3.00 and applies under standard test conditions (Ta = 25°C, DC measurement). The HZS2BLLTD-E maintains this specification across its qualified operating temperature range without recalibration.

Does HZS2BLLTD-E support operation below 1 µA?

Yes, the HZS2BLLTD-E is characterized down to 1 nA (10⁻⁹ A) and exhibits semilogarithmic linear VZ–IZ behavior from that point up to 1 mA. Its hard-knee design ensures predictable voltage regulation even at 100 nA, making it suitable for ultra-low-power applications such as energy-harvesting sensor nodes. The HZS2BLLTD-E datasheet explicitly confirms ∆VZ2 ≤ 0.5 V between 0.001 mA and 0.05 mA, validating sub-microampere usability.

What is the maximum junction temperature rating for HZS2BLLTD-E?

The HZS2BLLTD-E has a maximum junction temperature (Tj) rating of 175°C, as specified in the Absolute Maximum Ratings table of Renesas document REJ03G0167-0300. This allows reliable operation in high-ambient environments such as enclosed industrial control cabinets or under-hood automotive locations, provided power dissipation remains within derated limits per Figure 3 (Power Dissipation vs. Ambient Temperature).

Is HZS2BLLTD-E RoHS compliant and lead-free?

Yes, the HZS2BLLTD-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and EU Directive 2011/65/EU. The device uses matte tin plating on leads and halogen-free molding compound, as confirmed in Renesas' official product compliance documentation and distributor listings (e.g., Digi-Key, Mouser). No exemptions apply, and the HZS2BLLTD-E meets JEDEC J-STD-020 moisture sensitivity level 1 requirements.

What package type does HZS2BLLTD-E use and is it compatible with automated assembly?

The HZS2BLLTD-E uses the MHD package (JEITA code GRZZ0002ZC-A), a surface-mount plastic package with 2.0 mm body diameter and 26 mm lead length. It is explicitly designed for 5 mm-pitch high-speed automatic insertion, as stated in the "Features" section of the Renesas datasheet. The MHD footprint is compatible with standard pick-and-place equipment and reflow soldering profiles per J-STD-020.

HZS2BLLTD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS2BLLTD-E FAQ

1.How can I place an order for HZS2BLLTD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS2BLLTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS2BLLTD-E reliable?

The price and inventory of HZS2BLLTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS2BLLTD-E is usually 5 days.

3.What payment methods are accepted for HZS2BLLTD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS2BLLTD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS2BLLTD-E?

HZS2BLLTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS2BLLTD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS2BLLTD-E?

For technical support, including HZS2BLLTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS2BLLTD-E requirements.

6.How does Aetrix verify that HZS2BLLTD-E is sourced from the original manufacturer or authorized distributors?

All HZS2BLLTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS2BLLTD-E meets industry standards.

7.What is the process for return or replacement of HZS2BLLTD-E?

All HZS2BLLTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS2BLLTD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS2BLLTD-E part is unused and in its original packaging.

Return procedure for HZS2BLLTD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZS2BLLTD-E Tags

  • HZS2BLLTD-E
  • HZS2BLLTD-E PDF
  • HZS2BLLTD-E Datasheet
  • HZS2BLLTD-E Specifications
  • HZS2BLLTD-E Images
  • Renesas
  • Renesas HZS2BLLTD-E
  • Buy HZS2BLLTD-E
  • HZS2BLLTD-E Price
  • HZS2BLLTD-E Distributor
  • HZS2BLLTD-E Supplier
  • HZS2BLLTD-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER