Renesas HZS2C3TD-E

Overview

HZS2C3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 2.4–2.6 V (typ. 2.5 V), 400 mW power dissipation, and low dynamic impedance of 100 Ω at 5 mA test current - deployed in industrial control logic rails and sensor biasing circuits.

For engineers reviewing the HZS2C3TD-E datasheet, HZS2C3TD-E pinout, HZS2C3TD-E application, or HZS2C3TD-E equivalent, this device serves as a compact, high-stability voltage reference in space-constrained analog front-ends, DC-DC feedback networks, and overvoltage protection clamps where tight tolerance and thermal stability are required.

Technical Context

The HZS2C3TD-E operates as a two-terminal voltage reference using avalanche and Zener breakdown mechanisms optimized for the 2.5 V range, delivering stable regulation under reverse-biased DC conditions with minimal temperature coefficient drift. Its design targets low-leakage operation (<5 µA at 0.5 V) and maintains consistent dynamic resistance across its rated current range.

It is fabricated using silicon planar process technology to ensure reproducible V_Z distribution and long-term reliability in ambient temperatures from −55°C to +175°C, with junction temperature capability up to 200°C - enabling use in thermally demanding environments without derating below 400 mW at 25°C.

Key Specifications

Pinout & Package

Package: MHD (Mini-High-Density) molded plastic package with 2.0 mm diameter body and 5 mm lead pitch - optimized for high-speed automatic insertion and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with BZX55C2V4 and MMSZ4685, the HZS2C3TD-E offers optimal balance of low dynamic impedance, MHD package compatibility with legacy insertion equipment, and 400 mW thermal headroom - making it preferred for industrial control modules requiring drop-in replacement and long-term supply continuity.

Availability

HZS2C3TD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, microcontroller reset circuits, and DC-DC feedback clamping requiring stable component supply with full traceability and lifecycle management.

Supply support for HZS2C3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

The HZS Series belongs to Renesas' discrete voltage reference product line, engineered specifically for high-reliability, low-drift shunt regulation in harsh-environment power management systems.

FAQ

What is the exact zener voltage range specified for HZS2C3TD-E?

The HZS2C3TD-E has a guaranteed zener voltage range of 2.4 V to 2.6 V when tested at I_Z = 5 mA and T_a = 25°C, with typical value centered at 2.5 V. This grade (C3) is part of the HZS2 family and is distinct from other grades like A1 or B2 that specify different V_Z ranges. The HZS2C3TD-E maintains this specification across its qualified operating temperature range without requiring external trimming.

Does HZS2C3TD-E support automatic insertion in high-volume manufacturing?

Yes, the HZS2C3TD-E uses the MHD package with 5 mm lead pitch and standardized dimensions, explicitly designed for compatibility with high-speed automatic insertion equipment. Its lake-blue cathode band and consistent lead geometry enable reliable vision-based orientation detection and placement - a key requirement confirmed in Renesas' ordering documentation and mechanical drawings for the HZS Series.

What is the maximum allowable reverse current before regulation degrades in HZS2C3TD-E?

The HZS2C3TD-E is characterized up to 5 mA zener test current, where dynamic resistance remains ≤100 Ω. Beyond this, regulation remains functional but r_d increases gradually; operation above 10 mA is not recommended without thermal derating, as power dissipation exceeds 400 mW at elevated ambient temperatures. The HZS2C3TD-E datasheet specifies absolute maximum ratings only up to 5 mA for parameter validation.

Is HZS2C3TD-E suitable for automotive applications?

No - the HZS2C3TD-E is classified as a Standard-grade Renesas product intended for industrial, office, and consumer equipment per quality grading guidelines in the datasheet. It is not qualified to AEC-Q101 or rated for automotive under-hood environments. For automotive use, Renesas offers separate High Quality-grade Zener diodes with extended temperature and qualification compliance - the HZS2C3TD-E must not be used in safety-critical or transportation systems without explicit written consent.

How does the temperature coefficient of HZS2C3TD-E affect its performance at 85°C ambient?

The HZS2C3TD-E exhibits a zener voltage temperature coefficient (γ_Z) of approximately −0.04 %/°C near 2.5 V, meaning V_Z decreases by ~1 mV/°C rise above 25°C. At 85°C ambient, assuming typical thermal resistance, junction temperature may reach ~110°C, resulting in ~−3.4 mV total shift from nominal 2.5 V - well within ±1% tolerance for most non-precision applications. This behavior is documented in Figure 2 of the HZS Series datasheet.