Renesas HZS30-1LTA-E

Overview

HZS30-1LTA-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 28.2–29.6 V at 0.5 mA, dynamic resistance of 27.0 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C. It is used in high-stability power supplies, sensor excitation circuits, and calibration references where low noise and tight voltage tolerance are critical.

For engineers reviewing the HZS30-1LTA-E datasheet, HZS30-1LTA-E pinout, HZS30-1LTA-E application, or HZS30-1LTA-E equivalent, key selection considerations include its 27.0 Ω zener impedance at 0.5 mA, −55 to +175°C storage temperature range, 5 mm-pitch compatibility for high-speed automatic insertion, and low-noise performance verified per HZS-L Series characterization.

Technical Context

The HZS30-1LTA-E employs a silicon planar junction structure with controlled doping and geometry to achieve low noise-approximately 1/3–1/10 that of the legacy HZ series-and stable zener breakdown characteristics. Its low leakage current (<1 μA at VR = 2.0 V) and tightly specified zener voltage tolerance (±0.7 V at 25°C) support high-accuracy regulation in low-current bias networks.

Thermal design is enabled by its 200°C maximum junction temperature and defined power derating curve (Fig.3), allowing operation up to ~125°C ambient at full 400 mW dissipation on standard FR-phenolic PCBs. The device operates exclusively in reverse-bias zener mode and is not rated for forward conduction or surge handling.

Key Specifications

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), axial-leaded, silicon planar Zener diode in epoxy-coated cylindrical package with cathode band marking. Dimensions: φD = 2.0 mm (nom), L ≈ 26.0 mm, mass ≈ 0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMBZ5255BLT1G and BZX84-C27LT1G, the HZS30-1LTA-E delivers superior low-noise performance, tighter V_Z tolerance at low test current, and higher thermal endurance-making it uniquely suited for precision analog reference designs where stability and spectral purity are prioritized over footprint size.

Availability

HZS30-1LTA-E is available at Aetrix Electronics and suitable for industrial power supplies, precision sensor interfaces, calibration equipment, and test instrumentation requiring stable component supply with guaranteed long-term continuity.

Supply support for HZS30-1LTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for industrial, automotive, and infrastructure markets.

The HZS-L Series was developed specifically for low-noise, high-stability voltage reference applications in industrial instrumentation and precision analog systems-emphasizing zener impedance control, thermal resilience, and manufacturing consistency.

FAQ

What is the zener voltage tolerance of HZS30-1LTA-E at 25°C?

The HZS30-1LTA-E has a zener voltage range of 28.2 V to 29.6 V at I_Z = 0.5 mA and T_a = 25°C, corresponding to a ±0.7 V absolute tolerance. This tight specification supports accurate voltage setting in untrimmed analog circuits without external adjustment. The HZS30-1LTA-E maintains this tolerance across its qualified operating temperature range when used within derated power limits.

Does HZS30-1LTA-E support high-frequency noise suppression?

The HZS30-1LTA-E is characterized for ultra-low broadband noise-approximately 1/3–1/10 that of the legacy HZ series-making it effective for suppressing low-frequency (10 Hz–10 kHz) noise in reference and bias networks. It is not designed for RF filtering or transient suppression; its noise advantage applies specifically to zener-generated voltage noise in DC-coupled analog paths. The HZS30-1LTA-E achieves this via optimized planar junction geometry and process control.

What is the maximum allowable ambient temperature for full-power operation of HZS30-1LTA-E?

At ambient temperatures up to 125°C, the HZS30-1LTA-E can operate at its full 400 mW power rating when mounted on a standard 100 × 180 × 1.6 mm paper-phenolic PCB (per Fig.3). Above 125°C, linear derating applies down to zero dissipation at 175°C storage limit. The HZS30-1LTA-E's 200°C junction rating allows brief transient overloads, but sustained operation requires adherence to the published derating curve.

Is HZS30-1LTA-E compatible with lead-free reflow soldering processes?

Yes, the HZS30-1LTA-E's MHD package and epoxy encapsulation are qualified for lead-free wave and reflow soldering per JEDEC J-STD-020. Peak reflow temperature must not exceed 260°C for ≤10 seconds, and board-level thermal profiles must avoid exceeding 200°C junction temperature during soldering. The HZS30-1LTA-E's 200°C T_j rating provides margin for typical lead-free processes when thermal mass and dwell time are properly managed.

How does the dynamic resistance of HZS30-1LTA-E affect load regulation in shunt regulator designs?

The HZS30-1LTA-E's dynamic resistance of 27.0 Ω at 0.5 mA directly determines output voltage variation versus load current changes: ΔV_OUT ≈ r_d × ΔI_LOAD. For example, a 1 mA load step induces ~27 mV shift-enabling predictable regulation analysis without iterative simulation. This value is measured under DC conditions and remains stable across the device's qualified temperature range, making the HZS30-1LTA-E suitable for fixed-output shunt regulators in industrial controls.