Renesas HZS30-1LTD-E

Overview

HZS30-1LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 28.2–29.6 V at 0.5 mA, 400 mW power dissipation, and dynamic resistance of 27 Ω - enabling stable regulation in low-drift power supplies and sensor biasing applications.

For engineers reviewing the HZS30-1LTD-E datasheet, HZS30-1LTD-E pinout, HZS30-1LTD-E application, or HZS30-1LTD-E equivalent, this device is selected for noise-sensitive reference designs where zener impedance, temperature coefficient stability, and leakage current (<1 μA at VR = 20 V) are critical selection criteria.

Technical Context

This Zener diode employs a silicon planar junction structure with controlled doping and geometry to achieve low intrinsic noise - approximately 1/3–1/10 that of the legacy HZ series - while maintaining tight zener voltage tolerance (±0.7 V at 25°C) and low reverse leakage (≤1 μA at VR = 20 V). Its design targets DC-stabilized references rather than transient suppression.

The device operates within a junction temperature range of −55°C to +200°C and exhibits a zener voltage temperature coefficient of approximately +0.06 %/°C (or +17 mV/°C) near 30 V, confirmed by Fig.2 in REJ03G0166-0300 Rev.3.00. It is rated for continuous DC operation only - not AC or pulse testing per Note 1.

Key Specifications

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), axial lead, glass-passivated silicon planar construction, mass ≈ 0.084 g. Cathode identified by black band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with 1N5256B and BZX84-C30, HZS30-1LTD-E provides superior noise performance and tighter V_Z tolerance at the cost of axial-leaded packaging - making it optimal for laboratory, test equipment, and industrial analog signal chains where reference integrity dominates layout constraints.

Availability

HZS30-1LTD-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, high-voltage data acquisition, and low-drift linear power supply applications requiring stable component supply with traceable sourcing and lifecycle continuity.

Supply support for HZS30-1LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

HZS30-1LTD-E belongs to the HZS-L Series of low-noise silicon planar Zener diodes, designed specifically for precision voltage reference and stabilization in analog signal chains where noise, impedance, and thermal stability are critical.

FAQ

What is the zener voltage tolerance of HZS30-1LTD-E at 25°C?

HZS30-1LTD-E has a zener voltage range of 28.2 V to 29.6 V at I_Z = 0.5 mA and T_a = 25°C, corresponding to a ±0.7 V absolute tolerance or approximately ±2.4% of nominal 29 V. This is tighter than standard 5% Zener diodes and supports reduced calibration overhead in precision systems. The HZS30-1LTD-E datasheet (REJ03G0166-0300 Rev.3.00) confirms this on Page 3.

Does HZS30-1LTD-E support AC or pulsed zener operation?

No - the HZS30-1LTD-E is characterized and rated for DC operation only, as explicitly noted in the datasheet ("Tested with DC" in Notes 1 on Pages 2–3). Its dynamic resistance and noise specifications apply under steady-state DC bias. For AC or transient clamping, Renesas does not specify safe operating area, surge ratings, or frequency response; alternative TVS or transient suppressors should be used instead of HZS30-1LTD-E.

What is the maximum allowable ambient temperature for HZS30-1LTD-E at full 400 mW dissipation?

HZS30-1LTD-E achieves its full 400 mW power rating only at T_a = 25°C. According to Fig.3 on Page 4 of REJ03G0166-0300 Rev.3.00, derating begins linearly above 25°C, reaching 0 mW at ~120°C on a standard 100 × 180 × 1.6 mm phenolic PCB. At 70°C ambient, the usable power drops to ~270 mW. This thermal profile must be verified in-system using the HZS30-1LTD-E's actual board layout and airflow conditions.

How does the noise performance of HZS30-1LTD-E compare to generic Zener diodes?

HZS30-1LTD-E delivers approximately 1/3–1/10 the broadband voltage noise of the legacy HZ-series Zeners, as stated in the "Features" section on Page 1 of REJ03G0166-0300 Rev.3.00. This reduction stems from its optimized silicon planar junction process and low-leakage design - directly improving signal-to-noise ratio in applications like microphone preamplifiers, precision DAC references, and low-level sensor interfaces where HZS30-1LTD-E replaces noisier alternatives.

Is HZS30-1LTD-E suitable for automotive under-hood applications?

HZS30-1LTD-E is rated for junction temperatures up to +200°C and storage from −55°C to +175°C, meeting under-hood thermal requirements. However, Renesas classifies it as "Standard" grade (per Notice #7), meaning it is not qualified to AEC-Q101 or designated for automotive safety-critical systems. It may be used in non-safety automotive subsystems - e.g., infotainment power rails - provided full system-level validation, including lifetime reliability testing, is performed by the end customer. The HZS30-1LTD-E datasheet does not include automotive qualification data.