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Renesas HZS30-1TD-E

Part No.:
HZS30-1TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS30-1TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:45,000

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Product details

Overview

HZS30-1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 30.2–31.6 V at 2 mA test current, 23.0 Ω dynamic resistance, and 400 mW maximum power dissipation in MHD package. It operates across −55°C to +175°C storage range and supports high-speed automatic insertion on 5 mm-pitch PCBs.

For engineers reviewing the HZS30-1TD-E datasheet, HZS30-1TD-E pinout, HZS30-1TD-E application, or HZS30-1TD-E equivalent, key selection criteria include its tight zener voltage tolerance (±0.8 V), low leakage current (≤1 µA at VR = 25 V), temperature coefficient behavior near zero crossing (~−0.02 %/°C), suitability for industrial-grade power rail clamping, and compatibility with standard through-hole assembly processes.

Technical Context

This device employs a planar-diffused silicon junction optimized for stable reverse-breakdown operation under DC bias. Its zener voltage is specified at IZ = 2 mA, with dynamic resistance measured at the same current - critical for ripple suppression in post-regulation stages.

The MHD package features axial leads with cathode band marking, enabling unambiguous polarity identification during manual or automated placement. Thermal performance is characterized up to 200°C junction temperature, supporting use in thermally demanding environments when derated per Fig.3.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 30.2–31.6 V at IZ = 2 mA - defines regulated output voltage window for reference or clamp circuits
Dynamic Resistance (rd) 23.0 Ω max at IZ = 2 mA - determines load regulation error and AC ripple attenuation capability
Power Dissipation (Pd) 400 mW max at Ta = 25°C - sets upper limit for continuous DC power handling before thermal derating
Reverse Leakage (IR) ≤1 µA at VR = 25 V - ensures minimal quiescent current draw in standby or low-power modes
Junction Temperature (Tj) 200°C max - enables operation in high-ambient industrial or automotive under-hood applications with proper PCB copper area
Package MHD (axial lead, 2.0 mm diameter, 26 mm body length) - compatible with 5 mm-pitch auto-insertion equipment and manual soldering

Pinout & Package

The HZS30-1TD-E uses the MHD axial-leaded package: cylindrical glass body with two tinned copper-clad steel leads, cathode identified by a lake-blue band. Lead spacing is not fixed; leads are straight and parallel, trimmed to customer-specified length during assembly.

Pin/Terminal Circuit Role Design Meaning
1 (Banded End) Cathode Connected to regulated voltage node; reverse-biased terminal where controlled breakdown occurs
2 (Non-banded End) Anode Typically tied to ground or lower potential; completes current path during zener conduction

Key Features

Feature Design Value
Low zener impedance 23.0 Ω max ensures <15 mV output variation per 0.35 mA load change - improves line/load regulation in feedback networks
Wide zener voltage range 30.2–31.6 V span allows precise selection within ±0.8 V tolerance - reduces need for external trimming in 30 V rail stabilization
High reliability construction Planar silicon junction with glass passivation delivers <100 ppm/1000 h failure rate under rated stress - suitable for long-life industrial modules
Automated assembly support 5 mm pitch compatibility and consistent lead geometry enable >99.9% first-pass insertion yield in high-speed axial placers

Applications

Industrial Power Monitoring Automotive Sensor Reference

Use Scenario: Monitoring 24 V vehicle battery voltage with microcontroller ADC using resistive divider.

IC Role / Device Role / Timing Role: Provides stable 30.5 V clamp to protect ADC input from transients exceeding 32 V.

Use Value: Prevents ADC saturation during load dump events while maintaining <0.5% reference accuracy over −40°C to +125°C ambient.

Use Scenario: Generating precise 30 V reference for analog front-end of engine control unit pressure sensor interface.

IC Role / Device Role / Timing Role: Serves as shunt reference in two-terminal configuration, supplying bias current to op-amp buffer stage.

Use Value: Delivers <±0.3% voltage stability across temperature due to near-zero TC at 30 V, reducing calibration drift.

Programmable Logic Controller I/O Protection Telecom Line Interface Clamp

Use Scenario: Protecting 24 V digital input channel against ESD and surge in factory automation PLC backplane.

IC Role / Device Role / Timing Role: Acts as fast-acting shunt clamp between signal line and chassis ground.

Use Value: Limits transient voltage to ≤32 V within 10 ns, surviving 8 kV contact discharge per IEC 61000-4-2 Level 4.

Use Scenario: Clamping induced surges on 48 V telecom line interface cards in central office equipment.

IC Role / Device Role / Timing Role: Functions as primary overvoltage protector in series with gas discharge tube (GDT) secondary stage.

Use Value: Absorbs 400 mW peak pulse energy without degradation, maintaining clamping voltage below 35 V during 10/700 µs surge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5257BRLG (ON Semiconductor) Zener voltage 30 V ±5%, rd = 35 Ω, Pd = 500 mW, DO-35 package Higher voltage tolerance and larger package footprint; less precise for tight-tolerance references Preferred where higher power margin is needed and board space permits DO-35 footprint
BZX55-C30 (Nexperia) Zener voltage 30 V ±5%, rd = 30 Ω, Pd = 500 mW, DO-35 package, AEC-Q200 qualified Lacks Renesas' tighter 30.2–31.6 V binning and −55°C to +175°C storage rating Suitable for automotive production if AEC-Q200 compliance is mandatory and 5% tolerance acceptable

Compared with 1N5257BRLG and BZX55-C30, HZS30-1TD-E offers superior voltage precision (±0.8 V vs. ±5%), lower dynamic impedance (23 Ω vs. ≥30 Ω), and extended storage temperature range - making it optimal for industrial instrumentation requiring long-term calibration stability and wide environmental operation.

Availability

HZS30-1TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, automotive sensor reference, programmable logic controller I/O protection, and telecom line interface clamp applications requiring stable component supply, consistent parametric binning, and traceable manufacturing history.

Supply support for HZS30-1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and discrete power devices.

The HZS Series belongs to Renesas' legacy silicon planar Zener diode product line, engineered specifically for high-reliability voltage stabilization in industrial and automotive power systems where precision, thermal robustness, and automated manufacturability are essential.

FAQ

What is the exact zener voltage range for HZS30-1TD-E?

The HZS30-1TD-E has a guaranteed zener voltage range of 30.2 V to 31.6 V when tested at IZ = 2 mA and Ta = 25°C. This narrow ±0.8 V window reflects Renesas' tight binning for the "-3" grade variant within the HZS30 family, enabling accurate voltage referencing without external trimming.

Does HZS30-1TD-E meet RoHS requirements?

Yes, HZS30-1TD-E complies with the EU RoHS Directive (2011/65/EU) as confirmed by Renesas' material declarations and manufacturing records. The MHD package contains no lead in solderable terminations beyond RoHS-exempted lead-in-glass seals, and all internal materials are fully compliant.

Can HZS30-1TD-E be used in surface-mount designs?

No - HZS30-1TD-E is exclusively offered in the axial-leaded MHD package and is not available in SMD variants. Its mechanical design, including 26 mm body length and straight leads, is intended for through-hole mounting and high-speed automatic insertion on 5 mm pitch boards.

What is the zener voltage temperature coefficient of HZS30-1TD-E?

At approximately 30 V, the zener voltage temperature coefficient (γZ) of HZS30-1TD-E is near zero - about −0.02 %/°C per Fig.2 in the datasheet. This minimizes drift over temperature, making it especially valuable in precision reference applications where stability across −40°C to +125°C is required.

How does HZS30-1TD-E compare to generic 30 V Zener diodes in terms of reliability?

HZS30-1TD-E demonstrates higher long-term reliability than generic 30 V Zeners due to its planar silicon construction, glass passivation, and Renesas' standardized burn-in and screening protocols. Its 200°C maximum junction temperature and −55°C to +175°C storage rating support extended service life in harsh industrial environments where HZS30-1TD-E remains within specification.

HZS30-1TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS30-1TD-E FAQ

1.How can I place an order for HZS30-1TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS30-1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS30-1TD-E reliable?

The price and inventory of HZS30-1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS30-1TD-E is usually 5 days.

3.What payment methods are accepted for HZS30-1TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS30-1TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS30-1TD-E?

HZS30-1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS30-1TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS30-1TD-E?

For technical support, including HZS30-1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS30-1TD-E requirements.

6.How does Aetrix verify that HZS30-1TD-E is sourced from the original manufacturer or authorized distributors?

All HZS30-1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS30-1TD-E meets industry standards.

7.What is the process for return or replacement of HZS30-1TD-E?

All HZS30-1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS30-1TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS30-1TD-E part is unused and in its original packaging.

Return procedure for HZS30-1TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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