Renesas HZS30-2LTA-E

Overview

HZS30-2LTA-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 29.2–30.6 V, 400 mW power dissipation, and dynamic resistance of 200 Ω at 0.5 mA test current. It is used in high-stability power supplies, sensor excitation circuits, and instrumentation front-ends where low noise and tight voltage tolerance are critical.

For engineers reviewing the HZS30-2LTA-E datasheet, HZS30-2LTA-E pinout, HZS30-2LTA-E application, or HZS30-2LTA-E equivalent, key selection criteria include zener voltage tolerance (±0.7 V), temperature coefficient (−0.04 %/°C at ~30 V), low leakage (<1 μA at VR = 22.3 V), and MHD package compatibility with 5 mm-pitch automated insertion.

Technical Context

This device operates as a two-terminal voltage reference using silicon planar junction technology, with zener breakdown dominant in its 30 V range. Its low-noise design reduces RMS noise to approximately 1/3–1/10 that of the legacy HZ series, achieved via optimized doping and junction geometry.

The HZS30-2LTA-E exhibits a negative temperature coefficient of −0.04 %/°C (≈ −12 mV/°C) near 30 V, enabling predictable drift compensation in temperature-sensitive references. It is rated for junction temperatures up to 200°C and storage from −55°C to +175°C, supporting industrial and automotive under-hood applications within Standard quality grade.

Key Specifications

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), molded plastic, axial lead, 2.0 mm diameter × 26.0 mm length, 5 mm pitch compatible. Mass: 0.084 g (typ).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4749A and BZX85C30, the HZS30-2LTA-E trades higher dynamic resistance for significantly lower broadband noise and guaranteed low-leakage performance, making it uniquely suitable for precision, low-power, and high-reliability analog references where signal integrity dominates over raw current capability.

Availability

HZS30-2LTA-E is available at Aetrix Electronics and suitable for high-stability power supply reference, precision sensor excitation, and instrumentation front-end calibration requiring stable component supply across long-lifecycle industrial programs.

Supply support for HZS30-2LTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and enterprise applications.

The HZS-L Series was developed specifically for low-noise, high-stability voltage reference applications in industrial instrumentation and precision analog systems, emphasizing zener noise reduction and thermal stability over generic regulation.

FAQ

What is the exact zener voltage range for HZS30-2LTA-E at 0.5 mA?

The HZS30-2LTA-E has a guaranteed zener voltage range of 29.2 V to 30.6 V when tested at I_Z = 0.5 mA and T_a = 25°C. This ±0.7 V tolerance reflects the device's binning for precision reference use, and the value is confirmed in Renesas datasheet REJ03G0166-0300 Rev.3.00. The HZS30-2LTA-E maintains this specification across its qualified operating temperature range.

Does HZS30-2LTA-E support automated PCB assembly?

Yes, the HZS30-2LTA-E uses the MHD package (JEITA code GRZZ0002ZC-A), explicitly designed for 5 mm-pitch high-speed automatic insertion. Its axial lead configuration, 2.0 mm body diameter, and standardized lead spacing comply with industry-standard pick-and-place and wave soldering processes. The HZS30-2LTA-E is referenced in Renesas documentation as "suitable for 5mm-pitch high speed automatic insertion."

How does the noise performance of HZS30-2LTA-E compare to standard Zener diodes?

The HZS30-2LTA-E delivers approximately 1/3 to 1/10 the noise level of the legacy HZ series Zener diodes, per Renesas' characterization in REJ03G0166-0300. This improvement stems from proprietary silicon planar processing and junction optimization - not merely filtering or external circuitry. For designers implementing low-noise references in 24-bit data acquisition systems, the HZS30-2LTA-E provides measurable SNR advantage over generic 30 V Zeners.

What is the maximum allowable reverse leakage current for HZS30-2LTA-E?

The HZS30-2LTA-E specifies a maximum reverse leakage current (I_R) of less than 1 μA when tested at V_R = 22.3 V and T_a = 25°C. This low leakage is critical for maintaining accuracy in high-impedance voltage divider networks and battery-operated precision references. The value is measured and guaranteed per Renesas' electrical characteristics table in REJ03G0166-0300, and applies to every unit shipped as HZS30-2LTA-E.

Is HZS30-2LTA-E rated for automotive applications?

The HZS30-2LTA-E is classified as a "Standard" quality grade device per Renesas' product grading system, intended for office equipment, industrial robots, and test/measurement gear - not for automotive safety-critical systems. While its junction temperature rating (200°C) and storage range (−55°C to +175°C) exceed typical under-hood requirements, Renesas does not qualify or warrant the HZS30-2LTA-E for automotive use without explicit written consent. For automotive applications, consult Renesas' dedicated AEC-Q101 qualified Zener portfolio instead of relying on HZS30-2LTA-E.