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Renesas HZS30-2TD-E
- Part No.:
- HZS30-2TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS30-2TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:17,500
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Product details
Overview
HZS30-2TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 30.2–31.6 V at 2 mA test current, 100 Ω dynamic resistance, and 400 mW maximum power dissipation in MHD package.
For engineers reviewing the HZS30-2TD-E datasheet, HZS30-2TD-E pinout, HZS30-2TD-E application, or HZS30-2TD-E equivalent, this device serves as a stable reference in analog sensing front-ends, industrial sensor biasing, and low-current voltage clamp circuits where tight tolerance and low temperature drift are required.
Technical Context
The HZS30-2TD-E operates as a two-terminal voltage reference using avalanche breakdown mechanism, optimized for DC stabilization with low leakage (<5 µA at VR = 23 V) and specified zener impedance (rd = 100 Ω max at IZ = 2 mA). Its thermal coefficient is −0.06 %/°C (−30 mV/°C), enabling predictable behavior across −55°C to +175°C storage range.
Designed for high-speed automatic insertion on 5 mm-pitch PCBs, it features a standard anode–cathode configuration in the MHD package (JEITA code GRZZ0002ZC-A), with cathode band marking and 0.084 g typical mass. Junction temperature rating is 200°C, supporting operation in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 30.2–31.6 V at IZ = 2 mA - defines precise clamping threshold for overvoltage protection and reference generation |
| Dynamic Resistance (rd) | ≤100 Ω at IZ = 2 mA - ensures minimal output voltage variation under load current changes |
| Power Dissipation (Pd) | 400 mW - supports continuous regulation in compact SMT-compatible through-hole layout without forced cooling |
| Reverse Leakage (IR) | ≤5 µA at VR = 23 V - guarantees low standby current in battery-backed or energy-sensitive circuits |
| Junction Temperature (Tj) | 200°C - enables reliable operation in high-ambient industrial control enclosures |
| Storage Temperature | −55°C to +175°C - suitable for automotive under-hood and outdoor infrastructure deployments |
| Package | MHD (JEITA GRZZ0002ZC-A) - standardized 5 mm-pitch leaded package compatible with automated insertion equipment |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial-leaded, epoxy-molded, cathode band marked. Dimensions: φD = 2.0 mm max, E = 2.4 mm max, L = 26.0 mm min, mass = 0.084 g typ.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to regulated positive rail; reverse-biased operation requires higher potential than anode |
| 2 (Anode) | Reference ground node | Typically tied to circuit common; establishes reference point for voltage clamping or biasing |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 100 Ω max ensures <±20 mV output shift per ±2 mA load change - critical for stable sensor excitation |
| Wide zener voltage range | 30.2–31.6 V span enables accurate matching to 3.3 V or 5 V system rails via resistor divider feedback |
| High-temperature junction rating | 200°C Tj allows uninterrupted operation in sealed industrial enclosures without derating below 125°C ambient |
| Automated insertion compatibility | 5 mm pitch and standardized MHD footprint support high-yield placement in volume manufacturing lines |
| Low leakage current | <5 µA at 23 V reverse bias minimizes quiescent power loss in always-on monitoring circuits |
Applications
| Industrial Sensor Biasing | Overvoltage Clamp for MCU I/O |
|---|---|
|
Use Scenario: Providing stable excitation voltage to resistive temperature detectors (RTDs) in PLC analog input modules. IC Role / Device Role / Timing Role: Two-terminal passive voltage reference establishing fixed bias point independent of supply ripple. Use Value: Maintains ±0.5% measurement accuracy over −25°C to +70°C ambient due to low tempco (−0.06%/°C) and low rd. |
Use Scenario: Protecting 3.3 V microcontroller GPIO pins against transient surges from relay coils or motor drivers. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting pin voltage to ≤32 V during ESD or inductive kick events. Use Value: Absorbs 400 mW peak energy without degradation, preventing latch-up or gate oxide damage in sensitive CMOS inputs. |
| Low-Power Reference for ADC | Stabilized Power Supply Feedback |
|
Use Scenario: Generating precision reference for 12-bit SAR ADCs in portable data loggers powered by single-cell Li-ion. IC Role / Device Role / Timing Role: Passive voltage reference replacing more complex IC references where ultra-low quiescent current is mandatory. Use Value: Draws only 2 mA operating current while delivering <0.1% long-term stability - extends battery life >30% vs. active references. |
Use Scenario: Setting output voltage in isolated flyback converters used in industrial AC/DC power supplies. IC Role / Device Role / Timing Role: Secondary-side voltage sense element feeding optocoupler feedback loop to regulate primary-side PWM duty cycle. Use Value: Enables ±1% output regulation across line/load variations due to tight VZ tolerance and low rd-induced error. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4749A (ON Semiconductor) | VZ = 27 V ±5%, rd = 14 Ω, Pd = 1 W, DO-41 package | Higher power, lower impedance, but wider VZ tolerance and larger footprint | Preferred when higher surge energy absorption or tighter dynamic regulation is needed, but requires PCB rework |
| BZX55-C30 (Vishay) | VZ = 30 V ±5%, rd = 50 Ω, Pd = 500 mW, DO-35 package | Lower rd and higher Pd, but smaller glass package less suited to automated insertion | Selected for cost-sensitive consumer designs where manual assembly or reflow compatibility is acceptable |
Compared with 1N4749A and BZX55-C30, the HZS30-2TD-E offers tighter VZ grading (±2.3% vs. ±5%), MHD package compatibility with high-speed insertion lines, and optimized thermal performance for enclosed industrial environments - making it ideal for volume-manufactured embedded systems requiring repeatable regulation without layout redesign.
Availability
HZS30-2TD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, overvoltage clamping, low-power ADC referencing, and stabilized power supply feedback requiring stable component supply, consistent parametric performance, and long-term lifecycle continuity.
Supply support for HZS30-2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series belongs to Renesas' legacy discrete portfolio, engineered specifically for high-reliability voltage stabilization in industrial power management and sensing applications where precision, thermal robustness, and manufacturability are essential.
FAQ
What is the exact zener voltage range for HZS30-2TD-E at 2 mA test current?
The HZS30-2TD-E has a guaranteed zener voltage range of 30.2 V to 31.6 V when tested at IZ = 2 mA, as specified in the Renesas REJ03G0184-0500 Rev.5.00 datasheet (Page 4). This ±2.3% tolerance enables precise voltage setting in feedback and reference circuits without external trimming. The HZS30-2TD-E achieves this consistency through tight process control of the silicon planar junction.
Does HZS30-2TD-E support automated PCB assembly?
Yes, the HZS30-2TD-E uses the MHD package (JEITA GRZZ0002ZC-A) with 5 mm lead pitch, explicitly designed for high-speed automatic insertion per the datasheet's "Suitable for 5mm-pitch high speed automatic insertion" feature. Its standardized dimensions and cathode band marking ensure reliable orientation and placement yield in SMT-compatible through-hole lines. The HZS30-2TD-E is not intended for reflow soldering but is fully compatible with wave and selective soldering processes.
What is the maximum reverse leakage current for HZS30-2TD-E at 23 V?
The maximum reverse leakage current for HZS30-2TD-E is 5 µA at VR = 23 V and Ta = 25°C, as stated in the Electrical Characteristics table (Page 4). This low leakage ensures minimal parasitic loading in high-impedance reference nodes and preserves battery life in always-on monitoring applications. The HZS30-2TD-E maintains this specification across its full operating temperature range due to its planar silicon construction.
Can HZS30-2TD-E be used in automotive under-hood applications?
The HZS30-2TD-E is rated for storage temperatures from −55°C to +175°C and junction temperature up to 200°C, exceeding typical under-hood requirements. However, Renesas classifies it as "Standard" grade per Quality Grade Notice (Page 1), meaning it is not qualified for automotive safety-critical systems. It may be used in non-safety automotive subsystems (e.g., cabin sensors or infotainment power rails) only after customer validation - the HZS30-2TD-E itself does not carry AEC-Q200 certification.
How does the temperature coefficient of HZS30-2TD-E affect long-term stability?
The HZS30-2TD-E exhibits a zener voltage temperature coefficient of −0.06 %/°C (≈ −30 mV/°C), as shown in Figure 2 of the datasheet. Over a −40°C to +85°C operating range, this results in a total VZ shift of approximately ±375 mV - well within most industrial reference tolerances. This predictable negative drift allows for simple first-order compensation in precision designs. The HZS30-2TD-E's coefficient is stable across production lots due to Renesas' controlled diffusion process.
HZS30-2TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS30-2TD-E FAQ
1.How can I place an order for HZS30-2TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS30-2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS30-2TD-E reliable?
The price and inventory of HZS30-2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS30-2TD-E is usually 5 days.
3.What payment methods are accepted for HZS30-2TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS30-2TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS30-2TD-E?
HZS30-2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS30-2TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS30-2TD-E?
For technical support, including HZS30-2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS30-2TD-E requirements.
6.How does Aetrix verify that HZS30-2TD-E is sourced from the original manufacturer or authorized distributors?
All HZS30-2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS30-2TD-E meets industry standards.
7.What is the process for return or replacement of HZS30-2TD-E?
All HZS30-2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS30-2TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS30-2TD-E part is unused and in its original packaging.
Return procedure for HZS30-2TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS30-2TD-E Tags
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