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Renesas HZS30NB3TA-E
- Part No.:
- HZS30NB3TA-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS30NB3TA-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:20,000
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Product details
Overview
HZS30NB3TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies. It delivers a nominal zener voltage of 30.51 V (max) at 5 mA test current, with dynamic resistance of 23 Ω and maximum power dissipation of 400 mW. Its low leakage and tight voltage tolerance make it suitable for reference and clamp applications in industrial power management circuits.
For engineers reviewing the HZS30NB3TA-E datasheet, HZS30NB3TA-E pinout, HZS30NB3TA-E application, or HZS30NB3TA-E equivalent, this page provides verified electrical specifications, package dimensions, thermal derating behavior, zener temperature coefficient data, and validated alternative parts for voltage reference design and supply rail stabilization.
Technical Context
The HZS30NB3TA-E operates as a two-terminal voltage reference device using silicon planar junction technology. It exhibits a zener voltage range of 29.02 V to 30.51 V at IZ = 5 mA, with reverse current limited to 0.2 μA at VR = 23 V and dynamic impedance of 23 Ω under specified test conditions.
Its thermal performance is characterized by a junction temperature limit of 200°C and storage temperature range from –55°C to +175°C. The device's zener voltage temperature coefficient is approximately +0.055 %/°C near 30 V, consistent with mid-voltage Zener diodes in the HZS-N series.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 29.02 V (min) to 30.51 V (max) at IZ = 5 mA - defines stable regulation window for 30 V rail clamping or reference generation |
| Dynamic Resistance (rd) | 23 Ω at IZ = 5 mA - determines output impedance and load regulation sensitivity in shunt regulator topologies |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating applies |
| Reverse Current (IR) | ≤ 0.2 μA at VR = 23 V - ensures minimal quiescent current in standby or high-impedance bias networks |
| Junction Temperature (Tj) | 200°C maximum - enables operation in high-ambient industrial environments when properly heatsinked or PCB-trace cooled |
| Package Type | MHD (JEITA GRZZ0002ZC-A) - 5 mm-pitch axial leaded package optimized for high-speed automatic insertion |
Pinout & Package
The HZS30NB3TA-E uses the MHD axial-leaded package (JEITA code GRZZ0002ZC-A), with cathode identified by a black band. Total mass is 0.084 g; body diameter φD = 2.0 mm (nom), length L = 26.0 mm (min), and lead spacing E = 2.4 mm (max). Designed for through-hole mounting on standard 5 mm pitch PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated voltage node; carries reverse-biased current during zener conduction |
| 2 (Non-banded End) | Anode | Connected to circuit ground or lower potential; completes current path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | 23 Ω at 5 mA - improves regulation accuracy under varying load currents in shunt configurations |
| Wide zener voltage range | 29.02–30.51 V - supports precise 30 V reference selection without external trimming |
| High power rating | 400 mW - allows higher current capability than standard 250 mW Zeners for robust transient suppression |
| Low leakage current | ≤ 0.2 μA at 23 V - minimizes error in high-impedance feedback or sensing paths |
| Automated assembly compatibility | 5 mm pitch axial leads - enables direct use in high-speed insertion equipment without rework |
Applications
| Industrial Power Supply Regulation | Overvoltage Protection Clamp |
|---|---|
|
Use Scenario: Stabilizing 30 V auxiliary rails in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Shunt voltage reference and regulation element in discrete linear regulator stage. Use Value: Maintains ±2.5% output tolerance across –40°C to +105°C ambient via low tempco and stable rd. |
Use Scenario: Clamping surge-induced transients on 24 V DC control bus in factory automation systems. IC Role / Device Role / Timing Role: Fast-acting overvoltage limiter protecting downstream analog front-ends and microcontroller I/O. Use Value: Absorbs up to 400 mW peak energy without degradation, limiting excursion to ≤30.5 V. |
| Reference Voltage Source | Current Source Biasing |
|
Use Scenario: Providing stable 30 V reference for 16-bit DAC calibration circuitry in test instrumentation. IC Role / Device Role / Timing Role: Precision voltage node generator for ratio-metric ADC/DAC bias networks. Use Value: Enables <1 LSB gain error contribution due to <0.055 %/°C tempco and 23 Ω rd. |
Use Scenario: Setting constant current in LED driver bias stages requiring fixed 30 V headroom. IC Role / Device Role / Timing Role: Voltage-controlled current source element in discrete op-amp-based current mirror. Use Value: Delivers stable 30 V compliance voltage enabling ±0.5% current accuracy over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5257BRLG | Zener voltage 30 V ±5%, Pd = 500 mW, rd = 35 Ω, DO-35 package | Higher power but looser voltage tolerance and higher impedance - less accurate for precision references | Preferred where higher surge energy absorption is required and ±5% VZ tolerance is acceptable |
| BZX55-C30 | Zener voltage 30 V ±5%, Pd = 500 mW, rd = 30 Ω, DO-35 package | Same tolerance and higher power, but no B-grade (tighter) variant available - lacks HZS30NB3TA-E's 29.02–30.51 V binning | Selected for cost-sensitive industrial designs where tighter initial VZ spread is not required |
Compared with 1N5257BRLG and BZX55-C30, the HZS30NB3TA-E offers superior voltage accuracy (±2.5% vs. ±5%), lower dynamic impedance (23 Ω vs. ≥30 Ω), and graded B3 tolerance - making it optimal for high-stability reference and regulation where initial VZ precision matters more than absolute max power.
Availability
HZS30NB3TA-E is available at Aetrix Electronics and suitable for industrial power supply regulation, overvoltage protection clamping, precision reference voltage sourcing, and current source biasing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for HZS30NB3TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HZS-N Series, including HZS30NB3TA-E, was developed as a family of silicon planar Zener diodes targeting high-reliability stabilized power supply applications with tight voltage grading, low leakage, and automated assembly compatibility.
FAQ
What is the exact zener voltage range for HZS30NB3TA-E at 5 mA?
The HZS30NB3TA-E has a guaranteed zener voltage range of 29.02 V (minimum) to 30.51 V (maximum) when tested at IZ = 5 mA and Ta = 25°C. This B3-grade specification reflects tighter binning than standard commercial Zeners and is confirmed in Renesas document REJ03G0185-0300 Rev.3.00.
Does HZS30NB3TA-E have a specified zener voltage temperature coefficient?
Yes - the HZS30NB3TA-E exhibits a positive zener voltage temperature coefficient of approximately +0.055 %/°C near 30 V, as shown in Figure 2 of the official Renesas datasheet. This value is derived from the HZS-N series' published γZ vs. VZ curve and applies directly to the 30 V grade.
What is the maximum allowable reverse current for HZS30NB3TA-E at 23 V?
The maximum reverse current (IR) for HZS30NB3TA-E is specified as ≤ 0.2 μA when VR = 23 V and Ta = 25°C. This low leakage supports high-impedance bias networks and precision reference applications where current error must be minimized.
Is HZS30NB3TA-E compatible with automated PCB assembly processes?
Yes - the HZS30NB3TA-E uses the MHD axial-leaded package (JEITA GRZZ0002ZC-A) with 5 mm lead pitch, explicitly designed for high-speed automatic insertion equipment. Its mechanical dimensions and mass (0.084 g) are optimized for reliable feeding and placement per Renesas documentation.
What is the power derating behavior of HZS30NB3TA-E above 25°C ambient?
HZS30NB3TA-E follows standard thermal derating: its 400 mW maximum power dissipation decreases linearly above 25°C ambient, reaching zero at approximately 150°C on a standard 100 × 180 × 1.6 mm paper-phenol PCB (per Figure 3 in REJ03G0185-0300). Derating slope is ~3.2 mW/°C.
HZS30NB3TA-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS30NB3TA-E FAQ
1.How can I place an order for HZS30NB3TA-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS30NB3TA-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS30NB3TA-E reliable?
The price and inventory of HZS30NB3TA-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS30NB3TA-E is usually 5 days.
3.What payment methods are accepted for HZS30NB3TA-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS30NB3TA-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS30NB3TA-E?
HZS30NB3TA-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS30NB3TA-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS30NB3TA-E?
For technical support, including HZS30NB3TA-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS30NB3TA-E requirements.
6.How does Aetrix verify that HZS30NB3TA-E is sourced from the original manufacturer or authorized distributors?
All HZS30NB3TA-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS30NB3TA-E meets industry standards.
7.What is the process for return or replacement of HZS30NB3TA-E?
All HZS30NB3TA-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS30NB3TA-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS30NB3TA-E part is unused and in its original packaging.
Return procedure for HZS30NB3TA-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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