Renesas HZS30NB4TD-E

Overview

HZS30NB4TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 30.51 V (max), 400 mW power dissipation, and low dynamic resistance of 23 Ω at 5 mA test current - deployed in industrial instrumentation and embedded power rail conditioning.

For engineers reviewing the HZS30NB4TD-E datasheet, HZS30NB4TD-E pinout, HZS30NB4TD-E application, or HZS30NB4TD-E equivalent, this page delivers verified electrical specs, package mapping to MHD (JEITA GRZZ0002ZC-A), thermal derating behavior, and direct alternative options for voltage reference design continuity.

Technical Context

This device operates as a two-terminal voltage reference using silicon planar junction technology, optimized for stable reverse-biased breakdown with tight zener voltage tolerance (B4 grade: 29.02–30.51 V) and low temperature coefficient near zero crossing (~0 mV/°C at ~30 V per Fig.2). It exhibits graded leakage control with IR ≤ 0.2 μA at VR = 23 V.

Thermal performance follows JEDEC-standard PCB mounting on 100 × 180 × 1.6 mm paper-phenol board (Fig.3), delivering full 400 mW dissipation only at Ta ≤ 50°C and derating linearly to zero at Ta = 150°C - confirming suitability for convection-cooled industrial environments without forced airflow.

Key Specifications

Pinout & Package

MHD package: axial-leaded, cylindrical glass-body diode with cathode band marking; lead spacing 5 mm, body diameter 2.0 mm, length 26.0 mm, mass 0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N5257BRLG and BZX79-C30, the HZS30NB4TD-E provides superior voltage accuracy (±2.5% vs. ±5%), lower dynamic resistance (23 Ω vs. ≥30 Ω), and guaranteed low-leakage performance - making it preferred for precision reference and industrial monitoring where regulation stability directly impacts measurement integrity.

Availability

HZS30NB4TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, embedded microcontroller reference, and DC-DC converter feedback requiring stable component supply with long-term manufacturability assurance.

Supply support for HZS30NB4TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZS-N Series was developed as a family of silicon planar Zener diodes targeting cost-effective, high-reliability voltage stabilization in industrial power supplies and instrumentation - emphasizing low leakage, tight tolerance grades, and automated assembly compatibility.

FAQ

What is the exact zener voltage range for HZS30NB4TD-E?

The HZS30NB4TD-E has a guaranteed zener voltage range of 29.02 V to 30.51 V at I_Z = 5 mA, corresponding to its B4 grade designation per Renesas REJ03G0185-0300 Rev.3.00. This 1.49 V span reflects ±2.5% tolerance around the nominal 30 V point and is validated under pulse-test conditions (PW = 40 ms).

Does HZS30NB4TD-E support high-temperature operation?

Yes, HZS30NB4TD-E supports junction temperatures up to 200°C and storage temperatures from –55°C to +175°C. Its thermal derating curve (Fig.3) confirms usable power dissipation down to 0 mW at 150°C ambient on standard PCB - enabling deployment in sealed industrial enclosures without active cooling when mounted per JEDEC guidelines.

What package type does HZS30NB4TD-E use, and is it RoHS-compliant?

HZS30NB4TD-E uses the MHD package (JEITA code GRZZ0002ZC-A), an axial-leaded, glass-bodied diode with 5 mm lead pitch and 2.0 mm body diameter. While the datasheet does not explicitly state RoHS status, Renesas confirms environmental compliance per EU RoHS Directive in its general policy (Note 10), and the part is classified as "Standard" grade for industrial applications.

How does the dynamic resistance of HZS30NB4TD-E affect load regulation?

The dynamic resistance of HZS30NB4TD-E is specified at ≤23 Ω at I_Z = 5 mA. In practice, this means a 1 mA change in load current induces ≤23 mV output variation - critical for maintaining <0.1% regulation in precision analog circuits such as ADC references or sensor excitation supplies where HZS30NB4TD-E serves as the primary voltage anchor.

Can HZS30NB4TD-E replace TL431 in feedback circuits?

HZS30NB4TD-E can serve as a fixed-voltage shunt replacement for TL431 in non-adjustable 30 V feedback paths, offering lower cost and simpler implementation. However, unlike TL431, it lacks adjustable reference, current sink capability, and built-in error amplifier - so HZS30NB4TD-E is appropriate only where a passive, fixed 30 V clamp or reference is sufficient and no regulation loop compensation is required.