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Renesas HZS33-2TD-E
- Part No.:
- HZS33-2TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS33-2TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
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Inventory:22,500
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Product details
Overview
HZS33-2TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, featuring a nominal zener voltage of 33 V (33.2–34.6 V), 400 mW maximum power dissipation, 25 Ω dynamic resistance at 2 mA test current, and operation up to 200°C junction temperature. It serves as a compact, low-leakage reference element in industrial power rails and analog signal conditioning circuits.
For engineers reviewing the HZS33-2TD-E datasheet, HZS33-2TD-E pinout, HZS33-2TD-E application, or HZS33-2TD-E equivalent, this page delivers verified electrical specs, package mapping to MHD (JEITA GRZZ0002ZC-A), cathode/anode terminal roles, real-world use cases in feedback loops and overvoltage clamping, and two validated alternative Zener diodes with documented parameter differences.
Technical Context
The HZS33-2TD-E operates as a two-terminal voltage reference device using silicon planar Zener breakdown, optimized for DC-stabilized supply regulation. Its 33 V nominal zener voltage falls within the high-voltage segment of the HZS series (33–38 V), where temperature coefficient is positive and minimized via process tuning.
It exhibits 25 Ω dynamic resistance at IZ = 2 mA, reverse leakage ≤1 µA at VR = 25 V, and thermal derating per Fig.3 - power dissipation drops linearly from 400 mW at 25°C to zero at 175°C ambient. The device is rated for junction temperatures up to 200°C and storage from −55°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 33.2–34.6 V at IZ = 2 mA - defines stable regulation point for mid-to-high-voltage reference applications |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal shutdown or degradation |
| Dynamic Resistance (rd) | 25 Ω at IZ = 2 mA - determines output impedance and load regulation sensitivity in shunt regulator designs |
| Reverse Leakage Current (IR) | ≤1 µA at VR = 25 V - ensures minimal quiescent current draw in standby or low-power monitoring circuits |
| Junction Temperature (Tj) | 200°C maximum - enables reliable operation in high-ambient industrial environments without forced cooling |
| Package Type | MHD (JEITA GRZZ0002ZC-A) - 5 mm-pitch leaded package compatible with high-speed automatic insertion equipment |
Pinout & Package
Package: MHD (JEITA GRZZ0002ZC-A), axial-lead, epoxy-molded, 2.0 mm diameter body, 26 mm lead length, 5 mm pitch. Cathode identified by lake-blue band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated output node in shunt configuration; accepts reverse bias to initiate Zener conduction |
| 2 (Non-banded End) | Anode | Connected to ground or common reference; completes current path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low Zener impedance | 25 Ω at 2 mA - improves regulation accuracy under varying load currents in feedback networks |
| Wide zener voltage range | 33.2–34.6 V tolerance - accommodates production spread while maintaining system-level voltage margin |
| High thermal robustness | 200°C max junction temperature - supports deployment in enclosed industrial enclosures without heatsinking |
| Automated assembly compatibility | 5 mm pitch, MHD package - enables direct integration into high-volume PCB assembly lines without manual rework |
Applications
| Industrial Power Supply Feedback | Overvoltage Clamp Circuit |
|---|---|
Use Scenario: Used in the error amplifier feedback loop of an isolated DC-DC converter to maintain ±1% output voltage stability across line/load/temperature. IC Role / Device Role / Timing Role: Zener reference diode providing precise 33 V threshold for TL431-type shunt regulator control. Use Value: Enables tight output regulation without external trimming, leveraging 25 Ω rd to minimize loop gain variation. |
Use Scenario: Placed across a 24 V rail input to protect downstream logic from transient surges exceeding 36 V. IC Role / Device Role / Timing Role: Passive overvoltage clamp absorbing energy during ESD or inductive kick events. Use Value: Limits peak voltage to ≤34.6 V with <1 µA leakage at 25 V, minimizing standby power loss. |
| Temperature-Stable Reference Source | Current-Limited Bias Generator |
Use Scenario: Supplies bias current to a precision op-amp input stage in a sensor signal conditioner operating from −40°C to +85°C ambient. IC Role / Device Role / Timing Role: Zener-based current source delivering stable 2 mA through series resistor to establish VREF. Use Value: Maintains current stability due to low tempco (≈+0.05%/°C near 33 V) and 200°C Tj rating. |
Use Scenario: Generates fixed 2 mA bias for a phototransistor amplifier in an optical isolation interface. IC Role / Device Role / Timing Role: Shunt-regulated current source formed with series resistor and HZS33-2TD-E. Use Value: Delivers repeatable 2 mA across unit-to-unit variation thanks to tight 33.2–34.6 V VZ tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX85C33 (Nexperia) | VZ = 31.4–34.6 V, Pd = 1.3 W, rd = 40 Ω @ 5 mA, DO-41 package | Higher power rating but larger footprint and higher dynamic impedance - suited for higher-current clamping | Select when >400 mW dissipation or DO-41 board layout is required; not drop-in due to different package and pin pitch |
| 1N5257B (ON Semiconductor) | VZ = 32.5–35.1 V, Pd = 500 mW, rd = 35 Ω @ 20 mA, DO-35 package | Higher test current, higher rd, smaller DO-35 body - better for space-constrained low-power references | Choose for tighter board real estate; verify thermal margin since Pd derating differs and rd increases regulation error |
Compared with BZX85C33 and 1N5257B, the HZS33-2TD-E offers superior dynamic impedance (25 Ω vs. ≥35 Ω) and MHD package compatibility with automated insertion, making it optimal for cost-sensitive, high-volume industrial power supplies requiring stable 33 V reference performance at ≤400 mW.
Availability
HZS33-2TD-E is available at Aetrix Electronics and suitable for industrial power supplies, analog sensor interfaces, and overvoltage protection circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for HZS33-2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series is part of Renesas' discrete diode portfolio, engineered specifically for high-reliability voltage stabilization in industrial-grade power management and signal conditioning systems.
FAQ
What is the exact zener voltage range for HZS33-2TD-E?
The HZS33-2TD-E has a guaranteed zener voltage range of 33.2 V to 34.6 V when tested at IZ = 2 mA and Ta = 25°C, as specified in the Renesas REJ03G0184-0500 datasheet, Page 4. This tolerance reflects Grade "-3" within the HZS33 family and ensures predictable regulation behavior in production designs.
Does HZS33-2TD-E support automated PCB assembly?
Yes, the HZS33-2TD-E uses the MHD package (JEITA GRZZ0002ZC-A) with 5 mm lead pitch, explicitly designed for high-speed automatic insertion equipment. Its axial-lead form factor and lake-blue cathode band enable reliable orientation detection and placement in volume manufacturing, as confirmed in the "Ordering Information" section of the datasheet.
What is the maximum reverse leakage current for HZS33-2TD-E?
The maximum reverse leakage current for HZS33-2TD-E is 1 µA at VR = 25 V and Ta = 25°C, per the "Electrical Characteristics" table on Page 2 of the Renesas REJ03G0184-0500 datasheet. This low leakage supports energy-efficient operation in battery-backed or always-on monitoring circuits.
Can HZS33-2TD-E be used in high-temperature environments?
Yes, HZS33-2TD-E is rated for junction temperatures up to 200°C and storage from −55°C to +175°C. Its thermal derating curve (Fig.3, Page 5) shows usable power dissipation down to 0 mW at 175°C ambient, making it suitable for enclosed industrial controls, motor drives, and power converters without active cooling.
Is HZS33-2TD-E RoHS compliant?
Renesas confirms RoHS compliance for the HZS Series, including HZS33-2TD-E, per EU Directive 2011/65/EU. Environmental specifications are managed through Renesas' material declaration system; full compliance documentation is available upon request from Renesas sales offices or authorized distributors.
HZS33-2TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS33-2TD-E FAQ
1.How can I place an order for HZS33-2TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS33-2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS33-2TD-E reliable?
The price and inventory of HZS33-2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS33-2TD-E is usually 5 days.
3.What payment methods are accepted for HZS33-2TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS33-2TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS33-2TD-E?
HZS33-2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS33-2TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS33-2TD-E?
For technical support, including HZS33-2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS33-2TD-E requirements.
6.How does Aetrix verify that HZS33-2TD-E is sourced from the original manufacturer or authorized distributors?
All HZS33-2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS33-2TD-E meets industry standards.
7.What is the process for return or replacement of HZS33-2TD-E?
All HZS33-2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS33-2TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS33-2TD-E part is unused and in its original packaging.
Return procedure for HZS33-2TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS33-2TD-E Tags
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