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Renesas HZS3.3NB2TA-E
- Part No.:
- HZS3.3NB2TA-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS3.3NB2TA-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:19,250
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Product details
Overview
HZS3.3NB2TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 3.32 V to 3.53 V at 5 mA test current, with dynamic resistance of 20 Ω max and reverse leakage current ≤1.0 μA at 1.0 V, housed in a standard MHD (JEITA GRZZ0002ZC-A) axial lead package.
For engineers reviewing the HZS3.3NB2TA-E datasheet, HZS3.3NB2TA-E pinout, HZS3.3NB2TA-E application, or HZS3.3NB2TA-E equivalent, this device is selected for low-noise reference generation, overvoltage clamping in sensor interfaces, and voltage threshold detection in battery-powered instrumentation where tight VZ tolerance and low rd are critical.
Technical Context
The HZS3.3NB2TA-E operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting excess current to ground when input exceeds its zener breakdown threshold. Its planar construction ensures consistent junction characteristics and low temperature coefficient drift.
It is rated for 400 mW maximum power dissipation at 25°C ambient, with junction temperature limited to 200°C and storage range spanning –55°C to +175°C. The device exhibits graded zener voltage tolerance (B2 grade), enabling selective binning for applications requiring tighter regulation than standard B1 parts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.32 V to 3.53 V at IZ = 5 mA - defines precise regulation point for low-voltage reference circuits |
| Dynamic Resistance (rd) | ≤20 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Reverse Leakage Current (IR) | ≤1.0 μA at VR = 1.0 V - guarantees negligible standby current in high-impedance bias networks |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact PCB layouts without forced cooling |
| Junction Temperature (Tj) | 200°C maximum - enables reliable operation in thermally constrained industrial environments |
| Zener Voltage Grade | B2 - provides tighter VZ tolerance vs. B1, improving system-level accuracy without trimming |
| Package | MHD (GRZZ0002ZC-A) - standardized 5 mm-pitch axial lead package compatible with high-speed automatic insertion |
Pinout & Package
MHD package: axial-leaded, cylindrical glass body with cathode band marking; leads spaced 5 mm apart, diameter 2.0 mm, length 26.0 mm; mass ≈0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to regulated voltage node; conducts current when anode-to-cathode voltage exceeds VZ |
| 2 (Anode) | Reference/ground terminal | Typically tied to circuit ground or lowest potential; completes shunt regulation path |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | 20 Ω max at 5 mA - maintains regulation stability under dynamic load conditions |
| Graded zener voltage (B2) | 3.32–3.53 V tolerance band - reduces need for post-assembly calibration in precision references |
| High power rating | 400 mW - supports higher current sinking capability than typical 250 mW Zeners |
| Wide operating temperature range | –55°C to +175°C storage; 200°C max junction - suitable for under-hood or industrial control environments |
| Automated assembly compatibility | 5 mm pitch, standardized MHD footprint - enables direct integration into high-volume SMT-compatible through-hole lines |
Applications
| Industrial Sensor Signal Conditioning | USB-C Port Overvoltage Protection |
|---|---|
|
Use Scenario: Stabilizing excitation voltage for bridge-based pressure sensors in factory automation systems. IC Role / Device Role / Timing Role: Shunt voltage reference providing fixed 3.3 V bias to Wheatstone bridge, rejecting supply ripple. Use Value: Low rd (20 Ω) minimizes output shift during sensor current draw changes, preserving measurement linearity. |
Use Scenario: Clamping transient surges on VBUS lines in portable USB-C accessories. IC Role / Device Role / Timing Role: Fast-response overvoltage clamp limiting VBUS to 3.53 V during ESD or hot-swap events. Use Value: B2-grade VZ tolerance ensures predictable clamping threshold without margin stacking in safety-critical paths. |
| Low-Power IoT Node Voltage Reference | Programmable Logic Controller Input Thresholding |
|
Use Scenario: Generating stable reference for 12-bit ADCs in battery-operated environmental monitors. IC Role / Device Role / Timing Role: Precision DC reference source for analog front-end, replacing higher-cost bandgap ICs. Use Value: 1.0 μA max IR at 1.0 V enables microamp-level sleep current budgets without reference leakage penalty. |
Use Scenario: Defining logic-high threshold for 24 V DC digital inputs in PLC backplanes. IC Role / Device Role / Timing Role: Zener-based level translator converting 24 V field signals to 3.3 V logic-compatible levels. Use Value: 400 mW Pd rating allows sustained 24 V clamping with >10 mA sink capability, preventing input stage damage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MM3Z3V3T1G (onsemi) | 3.3 V nominal, ±5% tolerance (3.135–3.465 V), 300 mW Pd, SOD-323 package | SMD-only; lacks axial MHD form factor and B2-grade tight tolerance | Select for space-constrained PCBs where surface-mount is mandatory and ±5% VZ suffices |
| BZX55C3V3 (Nexperia) | 3.3 V nominal, ±5% tolerance, 500 mW Pd, DO-35 package (5.2 mm length, 2.0 mm dia) | Higher power but looser tolerance; DO-35 lead spacing differs (not 5 mm pitch) | Choose when higher surge energy handling is required and automated 5 mm insertion is not needed |
Compared with HZS3.3NB2TA-E, MM3Z3V3T1G offers SMD convenience but sacrifices B2-grade precision and axial lead compatibility, while BZX55C3V3 trades tighter VZ control for greater power headroom and non-standard lead pitch-making HZS3.3NB2TA-E optimal for high-accuracy through-hole power rail stabilization.
Availability
HZS3.3NB2TA-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB-C overvoltage protection, and low-power IoT voltage reference applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for HZS3.3NB2TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise systems.
HZS3.3NB2TA-E belongs to the HZS-N Series silicon planar Zener diodes, engineered for high-stability voltage regulation in cost-sensitive, high-reliability power supply and protection circuits.
FAQ
What is the exact zener voltage range specified for HZS3.3NB2TA-E?
The HZS3.3NB2TA-E has a guaranteed zener voltage range of 3.32 V to 3.53 V when tested at IZ = 5 mA and Ta = 25°C. This B2-grade tolerance reflects tighter binning than the broader B1 variant (3.16–3.38 V), supporting applications demanding higher reference accuracy without external trimming.
Does HZS3.3NB2TA-E support automated PCB assembly?
Yes, HZS3.3NB2TA-E uses the MHD package (JEITA GRZZ0002ZC-A) with standardized 5 mm lead pitch, explicitly designed for compatibility with high-speed automatic insertion equipment. Its cylindrical glass body and axial lead configuration meet industry requirements for throughput-oriented through-hole manufacturing.
What is the maximum power dissipation rating for HZS3.3NB2TA-E?
HZS3.3NB2TA-E is rated for 400 mW maximum power dissipation at an ambient temperature of 25°C. Derating applies above 25°C per the published curve in Figure 3 of the datasheet, reaching zero dissipation at approximately 150°C ambient on a standard 100 × 180 × 1.6 mm phenolic PCB.
How does the dynamic resistance of HZS3.3NB2TA-E affect regulation performance?
The HZS3.3NB2TA-E specifies dynamic resistance ≤20 Ω at IZ = 5 mA. This low rd value directly limits output voltage deviation under changing load current-e.g., a 1 mA load step induces <20 mV shift-making it suitable for precision analog circuits where supply ripple rejection is critical.
Is HZS3.3NB2TA-E suitable for automotive applications?
HZS3.3NB2TA-E is classified as a Standard-grade Renesas product, qualified for computers, office equipment, communications gear, and industrial robots-not for automotive or safety-critical systems. Its datasheet does not specify AEC-Q200 qualification, and Renesas explicitly restricts use in transportation equipment without prior written consent.
HZS3.3NB2TA-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS3.3NB2TA-E FAQ
1.How can I place an order for HZS3.3NB2TA-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS3.3NB2TA-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS3.3NB2TA-E reliable?
The price and inventory of HZS3.3NB2TA-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS3.3NB2TA-E is usually 5 days.
3.What payment methods are accepted for HZS3.3NB2TA-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS3.3NB2TA-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS3.3NB2TA-E?
HZS3.3NB2TA-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS3.3NB2TA-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS3.3NB2TA-E?
For technical support, including HZS3.3NB2TA-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS3.3NB2TA-E requirements.
6.How does Aetrix verify that HZS3.3NB2TA-E is sourced from the original manufacturer or authorized distributors?
All HZS3.3NB2TA-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS3.3NB2TA-E meets industry standards.
7.What is the process for return or replacement of HZS3.3NB2TA-E?
All HZS3.3NB2TA-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS3.3NB2TA-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS3.3NB2TA-E part is unused and in its original packaging.
Return procedure for HZS3.3NB2TA-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS3.3NB2TA-E Tags
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