Renesas HZS36-2LRX-E

Overview

HZS36-2LRX-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 35.3–36.8 V at 2 mA test current, 140 Ω dynamic resistance, 27.0 mW/°C temperature coefficient, and 400 mW maximum power dissipation in DO-35 package.

For engineers reviewing the HZS36-2LRX-E datasheet, HZS36-2LRX-E pinout, HZS36-2LRX-E application, or HZS36-2LRX-E equivalent, key selection criteria include zener voltage tolerance (±1.5 V), low leakage (<1 µA at VR = 28.2 V), thermal stability across –55°C to +175°C storage range, and suitability for high-speed 5 mm-pitch automatic insertion.

Technical Context

This Zener diode operates in reverse breakdown mode with DC-tested characteristics, delivering stable reference voltage under regulated current conditions. Its epitaxial planar construction ensures low noise, tight voltage distribution, and reproducible dynamic impedance (rd ≤ 140 Ω at IZ = 2 mA).

The device exhibits a positive temperature coefficient of +27.0 mV/°C - typical for zeners above ~6 V - enabling predictable drift compensation in temperature-sensitive analog circuits. It is rated for junction temperatures up to 200°C and supports operation across industrial ambient ranges without derating below 70°C.

Key Specifications

Pinout & Package

Package: DO-35 glass axial leaded package (2.5 mm diameter × 4.5 mm length), cathode identified by band marking; leads tinned for solderability and compatible with 5 mm pitch automated insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with HZS36-2LRX-E, 1N4749A offers higher power and lower impedance but targets 27 V systems and requires PCB layout changes; BZX55-C36 matches the DO-35 form factor and nominal voltage but lacks the tight 35.3–36.8 V binning and temperature coefficient specification critical for metrology-grade references.

Availability

HZS36-2LRX-E is available at Aetrix Electronics and suitable for industrial power supply regulation, automotive ECU reference voltage generation, and test equipment voltage calibration requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZS36-2LRX-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer applications.

HZS Series Zener diodes are part of ROHM's precision discrete portfolio, engineered for stable voltage reference in high-reliability power management systems where low leakage, graded voltage bins, and thermal predictability are essential.

FAQ

What is the exact zener voltage range specified for HZS36-2LRX-E?

HZS36-2LRX-E is binned to a zener voltage range of 35.3 V to 36.8 V at a test current of 2 mA, as confirmed in the HZS Series datasheet (ADE-208-120A(Z), Rev 1, page 5). This grade corresponds to "2" in the suffix and reflects tighter tolerance than generic 36 V Zeners, supporting precision regulation without external trimming.

Does HZS36-2LRX-E have a specified temperature coefficient, and how is it used in design?

Yes, HZS36-2LRX-E has a temperature coefficient of +27.0 mV/°C, documented in the "Main Characteristic" section (Figure 2) of the datasheet. Designers use this value to model voltage drift over temperature - for example, predicting a +135 mV increase from 25°C to 75°C - enabling accurate compensation in feedback loops or reference buffers.

Is HZS36-2LRX-E suitable for automated PCB assembly, and what is its lead pitch compatibility?

Yes, HZS36-2LRX-E is explicitly qualified for high-speed automatic insertion with 5 mm pitch, as stated in the "Features" section of the datasheet. Its DO-35 axial package meets IPC standards for lead spacing and tinning, enabling direct integration into pick-and-place and wave soldering lines without adapter tooling.

What is the maximum reverse leakage current for HZS36-2LRX-E, and under what condition is it measured?

HZS36-2LRX-E specifies a maximum reverse leakage current of less than 1 µA at VR = 28.2 V, per the Electrical Characteristics table on page 5 of the datasheet. This low IR ensures minimal quiescent current draw in bias networks and enhances accuracy in high-impedance reference nodes.

How does the power dissipation rating of HZS36-2LRX-E change with ambient temperature?

HZS36-2LRX-E maintains 400 mW dissipation up to 70°C ambient, then linearly derates to zero at 180°C, as shown in Figure 3 ("Power Dissipation Vs. Ambient Temperature"). At 100°C ambient, its usable power drops to approximately 200 mW - a critical consideration for enclosed or thermally constrained power supply designs.