Renesas HZS36NB1TD-E

Overview

HZS36NB1TD-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 34.2–35.7 V at 2 mA test current, 27 Ω dynamic resistance, and 400 mW maximum power dissipation in DO-35 package.

For engineers reviewing the HZS36NB1TD-E datasheet, HZS36NB1TD-E pinout, HZS36NB1TD-E application, or HZS36NB1TD-E equivalent, key selection criteria include zener voltage tolerance (±2.2% at mid-grade B1), low temperature coefficient (≈+0.06 %/°C), stable operation up to +200°C junction temperature, and compatibility with 5 mm-pitch high-speed automatic insertion equipment.

Technical Context

This discrete Zener diode operates in reverse-biased breakdown mode to maintain a stable reference voltage under varying load and input conditions. Its epitaxial planar construction ensures low leakage current (≤1 µA at VR = 27 V) and tight voltage distribution across production lots.

The device is characterized at 2 mA zener test current with DC excitation, exhibits a positive temperature coefficient above ~5 V, and delivers consistent regulation performance across ambient temperatures from –55°C to +175°C when derated per the published power vs. temperature curve.

Key Specifications

Pinout & Package

Package: DO-35 glass axial leaded package (2.5 mm diameter × 4.5 mm length), cathode band marked on body, compatible with 5 mm pitch automated insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with HZS36NB1TD-E, the 1N4736A offers higher power but sacrifices voltage precision and package compatibility, while the BZX55-C36 matches the DO-35 form factor but trades off tighter regulation and lower dynamic impedance for lower cost.

Availability

HZS36NB1TD-E is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, test equipment calibration circuits, and LED driver feedback networks requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZS36NB1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.

The HZS Series is part of ROHM's discrete Zener diode portfolio engineered for high-precision voltage stabilization in compact, high-reliability power systems where tight tolerance, low impedance, and thermal robustness are critical.

FAQ

What is the exact zener voltage range for HZS36NB1TD-E?

The HZS36NB1TD-E has a guaranteed zener voltage range of 34.2 V to 35.7 V when tested at I_Z = 2 mA and T_a = 25°C. This corresponds to the "B1" grade within the HZS36 family and reflects a ±2.2% tolerance around the nominal 35 V point. The value is measured using DC excitation per ROHM's ADE-208-120A(Z) specification document.

Is HZS36NB1TD-E suitable for surface-mount assembly?

No, HZS36NB1TD-E is not suitable for surface-mount assembly. It uses a DO-35 glass axial package with radial leads intended for through-hole mounting and 5 mm pitch automated insertion. No SMD variant (e.g., SOD-123 or SOD-323) exists for this specific grade and voltage. Engineers requiring SMT should evaluate ROHM's UDZ series or alternative manufacturers' SMD Zeners.

What is the maximum reverse leakage current for HZS36NB1TD-E?

The maximum reverse leakage current for HZS36NB1TD-E is 1 µA at V_R = 27 V and T_a = 25°C. This low leakage supports high-impedance reference designs and minimizes quiescent current in battery-backed or energy-sensitive applications. The value is confirmed in the Electrical Characteristics table of the official HZS Series datasheet (Rev 1).

Does HZS36NB1TD-E have a specified temperature coefficient?

Yes, HZS36NB1TD-E has a typical temperature coefficient of +0.06 %/°C, derived from the HZS36 family's published data (Fig.2). This positive coefficient is consistent with Zener diodes in the 30–40 V range and allows predictable voltage drift modeling across –55°C to +175°C ambient operation, supporting accurate thermal compensation in precision circuits.

Can HZS36NB1TD-E replace a generic 36 V Zener diode in existing designs?

Yes, HZS36NB1TD-E can replace generic 36 V Zeners in many cases, but verification is required. Its tighter 34.2–35.7 V range, 27 Ω dynamic resistance, and DO-35 mechanical dimensions must be validated against the original part's electrical and physical specs. Unlike ±5% parts (e.g., 1N4736A), HZS36NB1TD-E offers superior regulation stability but may require recalibration of feedback networks relying on nominal 36 V.