Renesas HZS36NB3TD-E
- Part No.:
- HZS36NB3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS36NB3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:

- Shipping:

Inventory:4,285
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS36NB3TD-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 36.4 V to 38.0 V at 2 mA test current, dynamic resistance ≤140 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C. It is used in industrial DC-DC converter feedback loops and low-power reference circuits.
For engineers reviewing the HZS36NB3TD-E datasheet, HZS36NB3TD-E pinout, HZS36NB3TD-E application, or HZS36NB3TD-E equivalent, key selection criteria include zener voltage tolerance (±2.8% at 36.4–38.0 V), low leakage (<1 µA at VR = 27 V), thermal coefficient behavior near 36 V, and compatibility with 5 mm-pitch automated insertion equipment.
Technical Context
This Zener diode operates in reverse-biased breakdown mode with DC-tested characteristics. Its epitaxial planar construction ensures stable zener impedance and low leakage across temperature extremes, supporting reliable regulation in unregulated input environments.
The device exhibits a positive temperature coefficient above ~5.6 V, with measured γZ ≈ +0.06 %/°C near 36 V (per Fig.2), and derates linearly from 400 mW at 25°C to zero at 180°C ambient (per Fig.3), requiring thermal-aware PCB layout on phenolic board with 5 mm lead pitch.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 36.4 V to 38.0 V at IZ = 2 mA - defines regulated output voltage range in shunt regulator designs |
| Dynamic Resistance (rd) | ≤140 Ω at IZ = 2 mA - determines load regulation sensitivity and ripple rejection capability |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous power handling before thermal shutdown |
| Reverse Leakage (IR) | <1 µA at VR = 27 V - ensures minimal quiescent current in standby or low-IOUT conditions |
| Junction Temperature (Tj) | −55°C to +200°C - enables operation in high-ambient industrial enclosures without forced cooling |
| Package Type | DO-35 glass axial - supports wave soldering and 5 mm-pitch auto-insertion per ADE-208-120A(Z) |
Pinout & Package
DO-35 glass axial package with cathode band marking; leads are tinned copper-clad steel, 0.45 mm diameter, 25 mm length, 5 mm pitch standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated voltage node; reverse-bias anode-to-cathode voltage establishes VZ |
| 2 (Non-banded End) | Anode | Connected to ground or common return; completes shunt path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | rd ≤140 Ω ensures <10 mV output shift per 1 mA load change in feedback networks |
| Stable voltage grade B3 | 36.4–38.0 V tolerance (±2.8%) enables tight-setpoint regulation without post-calibration |
| High-temperature operation | Rated to +200°C junction allows use in sealed power modules without heatsinking |
| Automated assembly support | 5 mm lead pitch and DO-35 outline comply with JIS C 5021 and JEDEC DO-35 standards |
Applications
| Industrial Power Supply Feedback | Low-Power Reference Source |
|---|---|
Use Scenario: Shunt regulation in isolated flyback auxiliary winding feedback circuit. IC Role / Device Role / Timing Role: Zener reference for TL431-like comparator biasing in secondary-side sensing. Use Value: Maintains ±1.5% output accuracy over −40°C to +105°C ambient due to predictable γZ and low rd. | Use Scenario: Precision voltage reference for microcontroller ADC calibration. IC Role / Device Role / Timing Role: Stable 36.4–38.0 V reference feeding resistive divider to generate 3.3 V or 5 V sub-reference. Use Value: Delivers <1 µA leakage at 27 V, minimizing error contribution in high-impedance divider networks. |
| DC-DC Converter Overvoltage Clamp | Legacy Equipment Voltage Stabilization |
Use Scenario: Overvoltage protection clamp on 36 V rail in telecom line card. IC Role / Device Role / Timing Role: Fast-acting shunt limiter triggered when transient exceeds 38 V. Use Value: Responds within nanoseconds to transients due to low junction capacitance (<2 pF) and 400 mW surge capability. | Use Scenario: Replacement zener in aging industrial PLC power section. IC Role / Device Role / Timing Role: Direct drop-in substitute for obsolete 36 V Zeners in analog signal conditioning stages. Use Value: Matches legacy DO-35 mechanical fit and electrical specs (VZ, rd, Pd) per ADE-208-120A(Z) Rev 1. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4749A | VZ = 24 V (nominal), rd = 14 Ω, Pd = 1 W - lower voltage, higher power, different grade tolerance | Not suitable for 36 V regulation; requires redesign of resistor network and thermal layout | Select only if system target is 24 V and higher power margin is needed |
| BZX55-C36 | VZ = 36 V (nominal), rd = 100 Ω, Pd = 500 mW - tighter nominal VZ but wider min/max (34.2–37.8 V), DO-35 compatible | Acceptable for non-critical 36 V references where ±5% tolerance is acceptable | Prefer for cost-sensitive designs where 36 V nominal suffices and 500 mW headroom is beneficial |
Compared with HZS36NB3TD-E, 1N4749A serves lower-voltage systems and lacks matching VZ range, while BZX55-C36 offers higher power but looser voltage grading - HZS36NB3TD-E uniquely delivers 36.4–38.0 V with guaranteed low rd and industrial-grade thermal margin.
Availability
HZS36NB3TD-E is available at Aetrix Electronics and suitable for industrial power supply feedback, low-power reference sources, DC-DC converter overvoltage clamping, and legacy equipment voltage stabilization requiring stable component supply and long-term lifecycle assurance.
Supply support for HZS36NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.
The HZS Series is part of ROHM's discrete Zener diode portfolio, engineered for high-reliability voltage stabilization in space-constrained, thermally demanding power supply applications.
FAQ
What is the exact zener voltage range for HZS36NB3TD-E?
HZS36NB3TD-E has a guaranteed zener voltage range of 36.4 V to 38.0 V when tested at IZ = 2 mA and Ta = 25°C, corresponding to Grade B3 per the HZS Series datasheet ADE-208-120A(Z) Rev 1. This 1.6 V span reflects ±2.8% tolerance around the nominal 37.2 V center point, and remains stable under DC bias conditions.
Is HZS36NB3TD-E suitable for surface-mount assembly?
No, HZS36NB3TD-E uses a DO-35 glass axial package with radial leads intended for through-hole mounting and 5 mm-pitch automatic insertion. It is not compatible with reflow or wave soldering processes designed for SMD packages like SOD-123 or SMA. For SMT alternatives, consider ROHM's UDZS series, not HZS36NB3TD-E.
What is the maximum reverse leakage current specification for HZS36NB3TD-E?
HZS36NB3TD-E specifies reverse leakage current IR < 1 µA at VR = 27 V and Ta = 25°C. This low leakage supports high-impedance reference divider designs and minimizes standby power loss in battery-backed or energy-sensitive applications using HZS36NB3TD-E.
Does HZS36NB3TD-E have a specified temperature coefficient?
Yes - per Figure 2 in the HZS Series datasheet, HZS36NB3TD-E (as part of the HZS36 family) exhibits a zener voltage temperature coefficient γZ of approximately +0.06 %/°C (or +22 mV/°C) near 36 V. This positive coefficient must be accounted for in wide-temperature-range regulation circuits using HZS36NB3TD-E.
Can HZS36NB3TD-E replace older 36 V Zener diodes in legacy designs?
Yes - HZS36NB3TD-E matches the DO-35 package, 5 mm lead pitch, and electrical performance (VZ, rd, Pd) of many legacy 36 V Zeners. Its guaranteed 36.4–38.0 V range and 200°C junction rating make it a robust upgrade for aging industrial equipment where HZS36NB3TD-E replaces obsolete parts without PCB modification.
HZS36NB3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS36NB3TD-E FAQ
1.How can I place an order for HZS36NB3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS36NB3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS36NB3TD-E reliable?
The price and inventory of HZS36NB3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS36NB3TD-E is usually 5 days.
3.What payment methods are accepted for HZS36NB3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS36NB3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS36NB3TD-E?
HZS36NB3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS36NB3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS36NB3TD-E?
For technical support, including HZS36NB3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS36NB3TD-E requirements.
6.How does Aetrix verify that HZS36NB3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS36NB3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS36NB3TD-E meets industry standards.
7.What is the process for return or replacement of HZS36NB3TD-E?
All HZS36NB3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS36NB3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS36NB3TD-E part is unused and in its original packaging.
Return procedure for HZS36NB3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS36NB3TD-E Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

