Renesas HZS3A2TD-P-E

Overview

HZS3A2TD-P-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power DC supply rails, with a nominal zener voltage of 2.6–2.8 V at 5 mA, dynamic resistance ≤100 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C - used in voltage reference circuits for sensor signal conditioning and microcontroller reset supervision.

For engineers reviewing the HZS3A2TD-P-E datasheet, HZS3A2TD-P-E pinout, HZS3A2TD-P-E application, or HZS3A2TD-P-E equivalent, key selection criteria include verified zener voltage tolerance (±0.1 V), low leakage current (<5 µA at 0.5 V), thermal coefficient behavior below 3.0 V, and compatibility with 5 mm-pitch automated insertion in compact PCB assemblies.

Technical Context

This device operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting reverse-biased avalanche breakdown at its specified zener voltage. Its epitaxial planar structure ensures tight V_Z distribution and low dynamic impedance under DC test conditions (I_Z = 5 mA).

The HZS3A2TD-P-E exhibits a negative temperature coefficient typical of low-voltage Zeners (<5 V), with measured γ_Z ≈ −2.0 mV/°C per Fig.2 in the HZS Series datasheet, and derates linearly from 400 mW at 25°C to zero at 175°C ambient per Fig.3.

Key Specifications

Pinout & Package

Package: DO-35 glass axial package with cathode band marking; leads spaced 5 mm apart for automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4728A and BZX55C2V7, the HZS3A2TD-P-E offers tighter V_Z grade (±0.1 V vs ±5%), lower leakage, and guaranteed 5 mm pitch compatibility - making it optimal for space-constrained, low-power, high-precision stabilization where manufacturing automation is critical.

Availability

HZS3A2TD-P-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, microcontroller reset supervision, and low-power IoT node reference requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for HZS3A2TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.

The HZS Series is engineered specifically for high-accuracy, low-drift voltage stabilization in compact, automated-assembly environments - targeting cost-sensitive yet thermally demanding applications like motor control feedback and battery management references.

FAQ

What is the exact zener voltage range for HZS3A2TD-P-E?

The HZS3A2TD-P-E has a guaranteed zener voltage range of 2.6 V to 2.8 V when tested at I_Z = 5 mA and T_a = 25°C, corresponding to Grade A2 in the HZS3 family per ADE-208-120A(Z) Rev 1 datasheet. This tight ±0.1 V tolerance supports precision reference design without post-production trimming.

Does HZS3A2TD-P-E support automotive temperature requirements?

Yes, HZS3A2TD-P-E is rated for junction temperatures up to +200°C and storage temperatures from −55°C to +175°C. While not AEC-Q200 qualified out-of-box, its thermal robustness enables use in under-hood cabin control modules when mounted with appropriate thermal relief and derated per Fig.3 in the datasheet.

Is HZS3A2TD-P-E compatible with standard 5 mm pitch pick-and-place equipment?

Yes, HZS3A2TD-P-E uses the DO-35 glass axial package with precisely 5 mm lead spacing, explicitly designed for high-speed automatic insertion as stated in the "Suitable for 5mm-pitch high speed automatic insertion" feature section of the HZS Series datasheet.

What is the maximum reverse leakage current specification for HZS3A2TD-P-E?

The maximum reverse leakage current for HZS3A2TD-P-E is 5 µA at V_R = 0.5 V and T_a = 25°C, per the Electrical Characteristics table for HZS3 A2 grade. This low leakage supports ultra-low-power applications such as battery-backed real-time clocks and energy-harvesting sensor nodes.

How does the dynamic resistance of HZS3A2TD-P-E affect load regulation?

HZS3A2TD-P-E has a dynamic resistance ≤100 Ω at I_Z = 5 mA, meaning a ±2 mA change in load current causes ≤±0.2 V output deviation. This directly determines load regulation performance in shunt-regulated supplies and must be factored into series resistor selection to maintain minimum I_Z.