Renesas HZS3A3TD-E

Overview

HZS3A3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 3.3 V (min 3.3 V, max 3.5 V), 400 mW power dissipation, and dynamic resistance of 5 Ω at 5 mA test current - deployed in industrial control logic rails and sensor biasing circuits.

For engineers reviewing the HZS3A3TD-E datasheet, HZS3A3TD-E pinout, HZS3A3TD-E application, or HZS3A3TD-E equivalent, this page delivers verified electrical specs, package mapping to MHD (JEITA GRZZ0002ZC-A), cathode/anode terminal roles, and two validated alternative Zener diodes for 3.3 V stabilization in space-constrained PCB designs.

Technical Context

This device operates as a two-terminal voltage reference using avalanche and Zener breakdown mechanisms optimized for stable DC regulation at low currents (5 mA typical test condition). Its 5 Ω dynamic impedance ensures minimal output voltage variation under load shifts in feedback networks.

The HZS3A3TD-E exhibits a negative temperature coefficient near 3.3 V (≈ −0.04 %/°C per Fig.2), requiring thermal-aware placement in precision analog sections. It is rated for junction temperatures up to 200°C and storage from −55°C to +175°C, supporting operation in extended-temperature industrial environments.

Key Specifications

Pinout & Package

MHD package: axial-leaded, cylindrical body (φD = 2.0 mm, L = 26.0 mm), lake-blue cathode band marking, mass ≈ 0.084 g, JEITA code GRZZ0002ZC-A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4728A and BZX55C3V3, the HZS3A3TD-E offers tighter V_Z tolerance (±0.1 V vs. ±5%), lower dynamic resistance (5 Ω vs. ≥9 Ω), and MHD packaging optimized for automated through-hole insertion - making it preferable for industrial-grade 3.3 V reference and clamp functions where precision and assembly efficiency matter.

Availability

HZS3A3TD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, microcontroller reset circuits, LED current regulation, and overvoltage protection clamps requiring stable component supply with consistent parametric performance across production batches.

Supply support for HZS3A3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS Series was developed by Renesas as a family of precision silicon planar Zener diodes targeting cost-effective, high-reliability voltage stabilization in industrial power supplies and signal conditioning circuits.

FAQ

What is the exact zener voltage range for HZS3A3TD-E?

The HZS3A3TD-E has a guaranteed zener voltage range of 3.3 V minimum to 3.5 V maximum when tested at I_Z = 5 mA and T_a = 25°C. This 0.2 V span reflects its "A3" grade designation within the HZS3 family and ensures predictable clamping behavior in 3.3 V system rails. The HZS3A3TD-E maintains this specification across its qualified operating temperature range.

Does HZS3A3TD-E support automatic insertion in manufacturing?

Yes, the HZS3A3TD-E uses the MHD package (JEITA GRZZ0002ZC-A) with 5 mm lead pitch and standardized axial geometry, explicitly designed for high-speed automatic insertion equipment. Its lake-blue cathode band provides unambiguous polarity identification during placement, and the 26.0 mm body length complies with common feeder tape specifications used in industrial assembly lines.

What is the maximum reverse leakage current for HZS3A3TD-E?

The HZS3A3TD-E specifies a maximum reverse leakage current (I_R) of 5 µA at V_R = 0.5 V and T_a = 25°C. This low leakage enables use in high-impedance analog circuits such as sensor bias networks or comparator reference inputs where parasitic current draw must remain below 10 µA to avoid measurement errors. The HZS3A3TD-E maintains this performance without requiring external filtering.

Can HZS3A3TD-E be used in place of a 3.3 V voltage reference IC?

The HZS3A3TD-E serves as a discrete, low-cost alternative to 3.3 V reference ICs in applications tolerating ±0.1 V initial accuracy and moderate temperature drift (≈−0.04 %/°C). While it lacks the ultra-low drift and buffered output of IC references, the HZS3A3TD-E delivers adequate stability for reset thresholds, LED biasing, and non-critical analog references where the HZS3A3TD-E's 5 Ω dynamic resistance meets system regulation requirements.

What is the thermal limit for continuous operation of HZS3A3TD-E?

The HZS3A3TD-E is rated for a maximum junction temperature (T_j) of 200°C and storage temperature from −55°C to +175°C. Under free-air conditions with its MHD package, it achieves full 400 mW power dissipation only at T_a ≤ 50°C; derating is required above that ambient, reaching zero dissipation at ~125°C. The HZS3A3TD-E remains functional and within spec across this full range when mounted per JEITA GRZZ0002ZC-A mechanical guidelines.