Renesas HZS3ALLTD-E

Overview

HZS3ALLTD-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low currents (1 nA to 1 mA), with a nominal Zener voltage of 2.7 V (min 2.5 V, max 2.9 V), dynamic impedance of 360 Ω at IZK = 0.5 µA, and temperature coefficient of ±0.6 mV/°C - used in precision analog front-ends and sensor biasing circuits.

For engineers reviewing the HZS3ALLTD-E datasheet, HZS3ALLTD-E pinout, HZS3ALLTD-E application, or HZS3ALLTD-E equivalent, key selection criteria include its sharp breakdown knee at sub-mA currents, low noise performance (~1/10 that of standard zeners), MHD package compatibility with 5 mm-pitch automated insertion, and suitability for stable low-power reference design where thermal drift and dynamic impedance directly impact ADC reference accuracy.

Technical Context

The HZS3ALLTD-E employs a planar diffusion structure to achieve semilogarithmic linearity in Vz–Iz characteristics across 1 nA–1 mA, enabling precise low-current regulation. Its hard-knee behavior minimizes voltage hysteresis near breakdown, while low dynamic impedance (360 Ω typ. at IZK = 0.5 µA) ensures minimal output variation under load transients.

Designed for operation at up to 250 mW power dissipation and junction temperatures up to 175°C, the device maintains stable Zener voltage over –55°C to +175°C storage range. Its temperature coefficient is specified as ±0.6 mV/°C - a value confirmed for the HZS3ALL variant group and directly applicable to HZS3ALLTD-E per Renesas REJ03G0167-0300 Rev.3.00.

Key Specifications

Pinout & Package

The HZS3ALLTD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a miniature axial-lead plastic case with 2.5 mm diameter and 3 mm body length, designed for 5 mm-pitch high-speed automatic insertion. Cathode identified by navy-blue band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode reference applications.

Compared with BZX84-C2V7LT1G and MMSZ4684T1G, the HZS3ALLTD-E delivers superior low-current stability (1 nA–1 mA), verified hard-knee behavior, and 1/10 lower noise - making it uniquely suitable for precision analog designs where reference integrity at microampere loads is non-negotiable.

Availability

HZS3ALLTD-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-power sensor biasing, and portable medical instrumentation requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for HZS3ALLTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The HZS-LL Series was engineered specifically for low-noise, hard-knee Zener reference applications in precision analog systems - targeting designers needing stable voltage references at microampere currents where conventional zeners exhibit excessive drift and noise.

FAQ

What is the Zener voltage tolerance of HZS3ALLTD-E at 0.5 mA test current?

The HZS3ALLTD-E has a Zener voltage range of 2.5 V minimum to 2.9 V maximum when tested at I_Z = 0.5 mA, yielding a nominal 2.7 V with ±0.2 V absolute tolerance. This specification is explicitly defined in the Electrical Characteristics table of Renesas REJ03G0167-0300 Rev.3.00 for the HZS3ALL variant, which applies directly to HZS3ALLTD-E.

Does HZS3ALLTD-E support operation below 1 µA, and what is its linearity behavior there?

Yes, the HZS3ALLTD-E is characterized down to 1 nA, with semilogarithmic linear V_Z–I_Z behavior from 1 nA to 1 mA. Its ∆V_Z1 and ∆V_Z2 parameters (0.5 V and 0.6 V respectively) quantify linearity deviation across sub-mA ranges - confirming hard-knee performance essential for ultra-low-power biasing in the HZS3ALLTD-E.

What is the package type and lead pitch compatibility of HZS3ALLTD-E?

HZS3ALLTD-E uses the MHD package (JEITA code GRZZ0002ZC-A), an axial-leaded plastic case with 2.5 mm diameter and 3 mm body length. It is explicitly rated for 5 mm-pitch high-speed automatic insertion, matching standard radial/axial feeder spacing on SMT placement equipment per Renesas documentation.

How does the temperature coefficient of HZS3ALLTD-E compare to standard Zener diodes?

The HZS3ALLTD-E has a temperature coefficient of ±0.6 mV/°C, significantly tighter than typical 2–5 mV/°C coefficients of general-purpose Zeners. This value is measured and guaranteed for the HZS3ALL variant group and directly applies to HZS3ALLTD-E, enabling predictable drift compensation in uncontrolled thermal environments.

Is HZS3ALLTD-E suitable for automotive applications, and what quality grade does it carry?

HZS3ALLTD-E is classified as "Standard" grade per Renesas quality grading (REJ03G0167-0300 p.1), intended for office equipment, communications gear, and industrial robots - not for automotive or safety-critical systems. Its datasheet does not specify AEC-Q200 qualification, and Renesas explicitly restricts use in transportation equipment without prior written consent.