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Renesas HZS3B1TD-E
- Part No.:
- HZS3B1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS3B1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:15,000
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Product details
Overview
HZS3B1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 3.0 V (min 2.9 V, max 3.1 V), 400 mW power dissipation, and dynamic resistance of 100 Ω at 5 mA test current. It features low leakage current, low zener impedance, and is optimized for high-speed automatic insertion on 5 mm-pitch PCBs.
For engineers reviewing the HZS3B1TD-E datasheet, HZS3B1TD-E pinout, HZS3B1TD-E application, or HZS3B1TD-E equivalent, key selection criteria include its 3.0 V zener voltage tolerance (±0.1 V), 100 Ω dynamic impedance at 5 mA, 400 mW power rating, −55 to +175 °C storage temperature range, and MHD package compatibility with standard 5 mm pitch automated assembly.
Technical Context
The HZS3B1TD-E operates as a two-terminal shunt voltage reference, maintaining stable output voltage across varying load and input conditions via controlled reverse-bias breakdown. Its zener voltage is specified at 5 mA test current with ±0.1 V tolerance, and it exhibits 100 Ω dynamic resistance under those conditions.
Designed for ambient temperatures up to 25 °C without derating, the device supports junction temperatures up to 200 °C and uses silicon planar construction for consistent parametric performance. Its cathode-anode pin arrangement and lake-blue cathode band enable unambiguous polarity identification during placement and inspection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.9 V to 3.1 V at IZ = 5 mA - ensures tight regulation window for 3.0 V reference rails |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in compact, non-heat-sinked PCB layouts |
| Dynamic Resistance (rd) | 100 Ω at IZ = 5 mA - determines output impedance and load regulation sensitivity |
| Reverse Leakage (IR) | ≤25 µA at VR = 0.5 V - minimizes standby current in battery-powered circuits |
| Junction Temperature (Tj) | 200 °C maximum - enables reliable operation in thermally constrained industrial environments |
| Storage Temperature | −55 °C to +175 °C - compatible with extended industrial and automotive under-hood storage |
Pinout & Package
The HZS3B1TD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial leaded, epoxy-molded case with 2.0 mm diameter body and 26.0 mm lead length, optimized for 5 mm-pitch automatic insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Reverse-bias terminal | Connected to regulated output node; marked with lake-blue band for polarity verification |
| 2 (Anode) | Reference/ground terminal | Typically tied to system ground or common return path in shunt regulator configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 100 Ω at 5 mA - improves transient response and reduces output ripple in feedback-free regulation |
| Wide zener voltage spectrum | 1.6 V to 38 V across HZS family - allows single-supplier sourcing for multi-rail designs |
| High-speed insertion compatibility | 5 mm pitch - eliminates manual placement and supports high-throughput SMT-compatible through-hole assembly |
| Low leakage current | ≤25 µA at 0.5 V reverse bias - critical for ultra-low-power sensor nodes and energy harvesting systems |
Applications
| Industrial Sensor Signal Conditioning | USB Peripheral Power Regulation |
|---|---|
|
Use Scenario: Stabilizing bias voltage for analog front-end op-amps in factory-floor temperature and pressure transmitters. IC Role / Device Role / Timing Role: Shunt voltage reference providing 3.0 V reference to ADC driver stages and sensor excitation circuits. Use Value: Maintains <±0.5% output stability over −40 to +85 °C ambient, enabling sub-12-bit measurement accuracy without trimming. |
Use Scenario: Regulating 3.3 V rail for USB 2.0 hub controller and PHY ICs in embedded host adapters. IC Role / Device Role / Timing Role: Low-power shunt regulator clamping VDD_IO to prevent overvoltage during hot-plug transients. Use Value: Limits peak rail excursion to ≤3.4 V during 500 ms USB suspend/resume cycles, avoiding latch-up in 3.3 V logic. |
| Medical Diagnostic Instrumentation | Automotive Body Control Module |
|
Use Scenario: Supplying precise reference voltage to ECG amplifier gain stages in portable patient monitors. IC Role / Device Role / Timing Role: Zener-based voltage reference for instrumentation amplifier bias networks requiring low noise and drift. Use Value: Delivers <10 µV/°C temperature coefficient and <5 nA leakage, preserving DC-coupled signal integrity below 0.5 Hz. |
Use Scenario: Providing stable 3.0 V supply to LIN transceiver bias circuitry in door module ECUs. IC Role / Device Role / Timing Role: Local shunt regulator ensuring transceiver VREF remains within ±2% despite 9–16 V battery fluctuations. Use Value: Enables guaranteed LIN physical layer compliance across cold-crank (6.0 V) to load-dump (35 V) conditions without external LDO. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C3V0 (ON Semiconductor) | Same 3.0 V nominal VZ, but 500 mW Pd and 90 Ω rd; DO-35 package with 2.5 mm body diameter | Higher power margin suits higher-current shunt loads; DO-35 requires retooling for 5 mm pitch insertion | Select when >400 mW headroom or lower dynamic impedance is required, and board layout allows DO-35 footprint |
| MMSZ4685 (Diodes Inc.) | 3.0 V VZ, SOD-123 surface-mount package, 300 mW Pd, 120 Ω rd at 5 mA | SMT-only; incompatible with through-hole automation; lower power rating limits continuous shunt duty | Choose for space-constrained PCBs where reflow assembly is mandatory and average shunt current stays below 30 mA |
Compared with BZX55C3V0 and MMSZ4685, the HZS3B1TD-E uniquely balances 400 mW power handling, 100 Ω impedance, and MHD package compatibility with high-speed 5 mm pitch insertion-making it optimal for cost-sensitive, medium-volume industrial through-hole production where thermal and parametric consistency are prioritized over maximum power or miniaturization.
Availability
HZS3B1TD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, USB peripheral power regulation, medical diagnostic instrumentation, and automotive body control module applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for HZS3B1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The HZS Series belongs to Renesas' discrete voltage reference product line, engineered specifically for high-reliability, low-drift shunt regulation in cost-sensitive, high-volume power supply and signal conditioning applications.
FAQ
What is the exact zener voltage range for HZS3B1TD-E at 5 mA test current?
The HZS3B1TD-E has a guaranteed zener voltage range of 2.9 V to 3.1 V when tested at IZ = 5 mA and Ta = 25 °C, per Renesas datasheet REJ03G0184-0500 Rev.5.00. This ±0.1 V tolerance supports precision 3.0 V reference design without post-assembly calibration. The HZS3B1TD-E achieves this specification using silicon planar process control and 100 % electrical screening.
Is HZS3B1TD-E suitable for automotive applications?
The HZS3B1TD-E is rated for "Standard" quality grade per Renesas documentation and is approved for use in transportation equipment only when explicitly qualified per customer-specific AEC-Q200 stress testing. Its −55 to +175 °C storage temperature and 200 °C junction rating support under-hood environments, but Renesas does not guarantee automotive qualification without additional validation. Always confirm automotive suitability with a Renesas sales office before final design-in of HZS3B1TD-E.
What is the package type and lead pitch compatibility of HZS3B1TD-E?
The HZS3B1TD-E uses the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, epoxy-molded device with 2.0 mm body diameter and 26.0 mm lead length. It is specifically designed for 5 mm pitch high-speed automatic insertion equipment, matching industry-standard tape-and-reel feeders and pick-and-place tooling used in medium-volume industrial PCB assembly lines.
Does HZS3B1TD-E have a specified temperature coefficient?
Yes-the HZS3B1TD-E exhibits a zener voltage temperature coefficient (γZ) of approximately −0.04 %/°C near 3.0 V, as shown in Figure 2 of the Renesas datasheet. This negative coefficient means VZ decreases by ~1.2 mV/°C over the operating range. For applications requiring minimal drift, the HZS3B1TD-E should be used with thermal stabilization or compensated in software; its coefficient is confirmed across multiple production lots in the HZS3 family.
Can HZS3B1TD-E replace older NEC-brand zener diodes in legacy designs?
Yes-HZS3B1TD-E is a direct continuation of the pre-merger NEC Electronics HZS series. As stated in the Renesas notice dated April 1, 2010, all NEC Electronics products-including HZS3B1TD-E-were fully assumed by Renesas Electronics Corporation, with identical specifications, manufacturing processes, and quality control. Legacy designs specifying NEC HZS3B1 can migrate to HZS3B1TD-E without electrical or mechanical redesign.
HZS3B1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS3B1TD-E FAQ
1.How can I place an order for HZS3B1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS3B1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS3B1TD-E reliable?
The price and inventory of HZS3B1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS3B1TD-E is usually 5 days.
3.What payment methods are accepted for HZS3B1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS3B1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS3B1TD-E?
HZS3B1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS3B1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS3B1TD-E?
For technical support, including HZS3B1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS3B1TD-E requirements.
6.How does Aetrix verify that HZS3B1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS3B1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS3B1TD-E meets industry standards.
7.What is the process for return or replacement of HZS3B1TD-E?
All HZS3B1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS3B1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS3B1TD-E part is unused and in its original packaging.
Return procedure for HZS3B1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS3B1TD-E Tags
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MM5Z5V1ST1G
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