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Renesas HZS3B2TA-E
- Part No.:
- HZS3B2TA-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS3B2TA-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:18,000
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Product details
Overview
HZS3B2TA-E from Renesas Electronics is a silicon planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits, with a nominal zener voltage of 3.0 V (min 2.9 V, max 3.1 V), 400 mW power dissipation, and dynamic resistance of 100 Ω at 5 mA test current. It serves as a precision reference in linear regulators, overvoltage protection, and biasing networks for industrial control and consumer electronics.
For engineers reviewing the HZS3B2TA-E datasheet, HZS3B2TA-E pinout, HZS3B2TA-E application, or HZS3B2TA-E equivalent, this device is selected for stable low-voltage reference needs where tight tolerance (±0.1 V), low leakage (<5 µA at 0.5 V), and high-temperature operation (up to +200°C junction) are critical in compact through-hole designs.
Technical Context
The HZS3B2TA-E employs a silicon planar junction structure optimized for low zener impedance and minimal temperature drift. Its zener voltage is specified at 5 mA test current, with reverse current limited to 5 µA maximum at VR = 0.5 V, ensuring predictable turn-on behavior in feedback loops.
Designed for 5 mm-pitch automatic insertion, it uses a standard MHD package with cathode band marking and axial lead configuration. The device operates across −55°C to +175°C storage range and supports continuous DC zener current without derating below 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.9 V to 3.1 V at IZ = 5 mA - defines stable regulation point for 3.0 V nominal reference applications |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in small PCB footprints without forced cooling |
| Dynamic Resistance (rd) | 100 Ω max at IZ = 5 mA - ensures low output impedance for effective ripple suppression |
| Reverse Current (IR) | ≤5 µA at VR = 0.5 V - guarantees minimal standby leakage in battery-backed or low-quiescent circuits |
| Junction Temperature (Tj) | +200°C maximum - enables use in high-ambient environments such as motor drives or enclosed power supplies |
| Package Type | MHD (axial lead, 5 mm pitch) - compatible with legacy wave-solder and high-speed auto-insertion equipment |
Pinout & Package
Package: MHD - axial-leaded, plastic-molded diode package with cathode band marking; overall length ~26 mm, lead diameter 0.4 mm, body diameter 2.0 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Positive reference terminal under reverse bias | Connected to regulated output node; polarity must be observed to avoid forward conduction |
| 2 (Anode) | Ground or return path terminal | Biased toward lower potential; forms current path with series resistor for zener operation |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 100 Ω max ensures stable regulation under varying load currents in feedback references |
| Wide zener voltage spectrum | 1.6 V–38 V family coverage allows direct selection of HZS3B2TA-E for 3.0 V systems without external scaling |
| High junction temperature rating | 200°C Tj enables reliable operation in thermally constrained enclosures or near heat sources |
| 5 mm pitch compatibility | Optimized for high-speed automated insertion - reduces assembly cost in volume production |
Applications
| Industrial Sensor Signal Conditioning | Consumer Audio Power Supply Reference |
|---|---|
|
Use Scenario: Stabilizing bias voltage for op-amp input stages in analog sensor front-ends operating in factory-floor environments. IC Role / Device Role / Timing Role: Zener reference providing fixed 3.0 V rail for ADC reference buffers and amplifier offset trimming. Use Value: Tight ±0.1 V tolerance and low 100 Ω dynamic resistance minimize measurement drift across temperature and line variations. |
Use Scenario: Generating clean 3.0 V reference for headphone amplifier ICs in portable Bluetooth speakers. IC Role / Device Role / Timing Role: Low-noise voltage clamp regulating LDO feedback node to suppress ripple-induced audio distortion. Use Value: 400 mW power rating and ≤5 µA leakage preserve battery life while maintaining SNR >95 dB. |
| Programmable Logic Controller I/O Protection | Smart Home Thermostat Voltage Monitoring |
|
Use Scenario: Overvoltage clamping on 24 V DC digital input channels exposed to inductive switching transients. IC Role / Device Role / Timing Role: Fast-response shunt element limiting input voltage to safe levels before signal conditioning circuitry. Use Value: 200°C junction rating withstands repeated surge events without parameter shift or thermal runaway. |
Use Scenario: Monitoring 3.3 V system rail integrity in battery-powered HVAC controllers during brownout conditions. IC Role / Device Role / Timing Role: Precision threshold detector triggering low-power sleep mode when supply drops below 3.0 V. Use Value: Guaranteed 2.9–3.1 V zener window ensures deterministic wake-up behavior across −40°C to +85°C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4723TR | Zener voltage 3.3 V (±5%), 1 W power rating, DO-41 package | Higher power but looser tolerance (±5% vs ±3.3%) and larger footprint | Preferred where higher surge energy handling is required and 3.3 V is acceptable |
| BZX55-C3V0 | Zener voltage 3.0 V (±5%), 500 mW, DO-35 package, higher rd (~150 Ω) | Same nominal voltage but wider tolerance and higher dynamic resistance | Suitable for non-critical biasing where cost is prioritized over regulation stability |
Compared with 1N4723TR and BZX55-C3V0, the HZS3B2TA-E delivers tighter voltage tolerance (±0.1 V), lower dynamic resistance (100 Ω), and superior high-temperature capability (200°C Tj), making it optimal for precision reference and space-constrained industrial designs.
Availability
HZS3B2TA-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, consumer audio power management, programmable logic controller I/O protection, and smart home thermostat voltage monitoring requiring stable component supply and long-term obsolescence support.
Supply support for HZS3B2TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer markets.
The HZS Series is part of Renesas' discrete diode portfolio, engineered specifically for stabilized power supply applications demanding precision voltage reference, low leakage, and robust thermal performance in compact through-hole packages.
FAQ
What is the exact zener voltage range for HZS3B2TA-E?
The HZS3B2TA-E has a guaranteed zener voltage range of 2.9 V to 3.1 V when tested at 5 mA zener current and 25°C ambient temperature. This ±0.1 V tolerance reflects its B2 grade within the HZS3 family and ensures consistent regulation in precision reference circuits without external trimming.
Does HZS3B2TA-E support high-temperature operation?
Yes, HZS3B2TA-E is rated for a maximum junction temperature of +200°C and storage temperature from −55°C to +175°C. This enables reliable deployment in thermally demanding applications such as motor drive control boards or enclosed power converters where ambient temperatures exceed 85°C.
What package type does HZS3B2TA-E use, and is it RoHS compliant?
HZS3B2TA-E uses the MHD axial-leaded package (JEITA code GRZZ0002ZC-A), with 5 mm lead pitch and lake-blue cathode band marking. Per Renesas documentation and EU RoHS Directive compliance statements, the device meets RoHS requirements with lead-free terminations and halogen-free molding compound.
How does the dynamic resistance of HZS3B2TA-E affect its regulation performance?
HZS3B2TA-E specifies dynamic resistance ≤100 Ω at 5 mA, meaning its output voltage varies less than 0.5 V per 5 mA load change. This low rd ensures minimal output deviation under dynamic load conditions-critical for maintaining accuracy in ADC reference buffers and op-amp bias networks.
Can HZS3B2TA-E replace other HZS-series diodes like HZS3B1 or HZS3B3?
No-HZS3B2TA-E is not interchangeable with HZS3B1 (2.8–3.0 V) or HZS3B3 (3.0–3.2 V) due to distinct zener voltage bands. Each grade targets specific regulation windows; substituting across grades risks out-of-spec output voltage. Always verify the exact grade suffix (B2) matches design requirements for 2.9–3.1 V operation.
HZS3B2TA-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS3B2TA-E FAQ
1.How can I place an order for HZS3B2TA-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS3B2TA-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS3B2TA-E reliable?
The price and inventory of HZS3B2TA-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS3B2TA-E is usually 5 days.
3.What payment methods are accepted for HZS3B2TA-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS3B2TA-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS3B2TA-E?
HZS3B2TA-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS3B2TA-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS3B2TA-E?
For technical support, including HZS3B2TA-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS3B2TA-E requirements.
6.How does Aetrix verify that HZS3B2TA-E is sourced from the original manufacturer or authorized distributors?
All HZS3B2TA-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS3B2TA-E meets industry standards.
7.What is the process for return or replacement of HZS3B2TA-E?
All HZS3B2TA-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS3B2TA-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS3B2TA-E part is unused and in its original packaging.
Return procedure for HZS3B2TA-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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