Renesas HZS3BLLTA-E

Overview

HZS3BLLTA-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low current (IZ = 0.5 µA to 0.5 mA), with nominal Zener voltage 2.8–3.2 V, dynamic impedance ≤360 Ω at IZT = 0.5 mA, and temperature coefficient ≤±0.6 mV/°C - used in precision analog front-ends and sensor biasing circuits.

For engineers reviewing the HZS3BLLTA-E datasheet, HZS3BLLTA-E pinout, HZS3BLLTA-E application, or HZS3BLLTA-E equivalent, key selection criteria include low-current breakdown linearity (∆VZ1 ≤ 0.5 V), cathode-anode polarity confirmation, MHD package compatibility with 5 mm-pitch automated insertion, and suitability for stable 3 V reference generation under <1 mA load conditions.

Technical Context

The HZS3BLLTA-E employs a planar diffusion structure enabling sharp Zener knee characteristics down to 1 nA reverse current, achieving semilogarithmic VZ–IZ linearity across six decades of current. Its low-noise performance stems from minimized generation-recombination noise in the depletion region.

This device operates as a two-terminal shunt voltage reference with fixed polarity (cathode band marked), requiring external series resistance for current regulation. It is not designed for surge suppression or transient clamping - its absolute maximum power dissipation is strictly limited to 250 mW at Ta = 25°C.

Key Specifications

Pinout & Package

Package: MHD (Mini-High-Density) surface-mount package per JEITA code GRZZ0002ZC-A, 2.0 mm diameter, 2.6 mm length, 0.4 mm lead diameter, mass ≈0.084 g - compatible with 5 mm-pitch automatic insertion equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMBZ5223BS and BZX84-C3V3, the HZS3BLLTA-E delivers superior low-current linearity, lower noise, and tighter temperature coefficient - making it uniquely suited for battery-powered, high-resolution analog systems where reference stability at sub-milliamp currents is critical.

Availability

HZS3BLLTA-E is available at Aetrix Electronics and suitable for portable sensor biasing, low-power ADC reference, and industrial signal conditioning requiring stable component supply, long-term parametric consistency, and RoHS-compliant packaging.

Supply support for HZS3BLLTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer markets.

The HZS-LL Series was developed specifically for high-stability, low-noise Zener reference applications demanding hard-knee breakdown and predictable behavior at nanoamp-to-milliamp currents - targeting precision analog subsystems in resource-constrained environments.

FAQ

What is the exact Zener voltage range for HZS3BLLTA-E at 0.5 mA test current?

The HZS3BLLTA-E has a guaranteed Zener voltage range of 2.8 V to 3.2 V when measured at IZ = 0.5 mA and Ta = 25°C. This 0.4 V window reflects tight process control for low-voltage reference applications. The device's hard-knee characteristic ensures this voltage remains highly stable even as current drops to 0.05 mA - a key differentiator from standard Zeners.

Is HZS3BLLTA-E suitable for use as a voltage reference in battery-powered devices drawing <1 µA?

Yes, the HZS3BLLTA-E is explicitly characterized down to 1 nA reverse current and maintains semilogarithmic VZ–IZ linearity from 1 nA to 1 mA. Its low dynamic impedance and low noise at nanoamp currents make it appropriate for ultra-low-power reference designs - such as those found in coin-cell-powered environmental sensors - where traditional Zeners fail to regulate predictably.

Does HZS3BLLTA-E have a specified Zener impedance at low current, e.g., 10 µA?

No official ZZK (knee impedance) value is published for HZS3BLLTA-E at 10 µA; however, the datasheet confirms ZZK ≤ 50 Ω at IZK = 0.5 µA, and Figure 1 shows near-linear VZ behavior down to 1 nA. Designers should use the ∆VZ1 parameter (≤0.5 V between 0.05 mA and 0.5 mA) to estimate low-current regulation performance rather than relying on impedance models.

What is the cathode marking convention for HZS3BLLTA-E?

The HZS3BLLTA-E uses a navy-blue cathode band located at one end of the cylindrical MHD package - consistent with JEDEC and JEITA standards. Pin 1 (cathode) is always the banded end; pin 2 (anode) is the opposite end. This marking is visible under standard optical inspection and compatible with automated optical alignment systems used in high-speed placement.

Can HZS3BLLTA-E replace standard 3.3 V Zeners like BZX84-C3V3 in existing designs?

Not directly: HZS3BLLTA-E has a lower nominal voltage (2.8–3.2 V vs. 3.3 V), different knee behavior, and is optimized for µA operation - whereas BZX84-C3V3 is rated at 5 mA. Substitution requires verifying system headroom, recalculating series resistor values, and validating noise/linearity performance. For new designs targeting low-current precision, HZS3BLLTA-E is preferred; for legacy 5 mA regulation, BZX84-C3V3 remains appropriate.