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Renesas HZS3BLLTD-E
- Part No.:
- HZS3BLLTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS3BLLTD-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:190,000
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Product details
Overview
HZS3BLLTD-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low current (IZ = 0.5 mA), with a nominal Zener voltage of 3.0 V (min 2.8 V, max 3.2 V), dynamic impedance of 360 Ω at IZT = 0.5 mA, and temperature coefficient of ±0.5 mV/°C - used in precision analog front-ends and sensor biasing circuits.
For engineers reviewing the HZS3BLLTD-E datasheet, HZS3BLLTD-E pinout, HZS3BLLTD-E application, or HZS3BLLTD-E equivalent, key selection criteria include low-current Zener knee sharpness, sub-1 µA reverse leakage (IR ≤ 100 nA at VR = 1.0 V), 250 mW power dissipation rating, MHD package compatibility with 5 mm-pitch automated insertion, and suitability for stable reference generation in battery-powered instrumentation.
Technical Context
The HZS3BLLTD-E employs a silicon planar junction structure engineered to deliver semilogarithmic linear VZ–IZ characteristics from 1 nA to 1 mA, enabling precise low-current regulation where conventional Zeners exhibit soft breakdown. Its hard-knee behavior minimizes voltage drift below 100 µA.
Designed for noise-sensitive analog systems, it achieves approximately 1/10 lower dynamic impedance and lower broadband noise than standard Zener diodes in the same voltage class, with specified linearity ∆VZ1 = 0.5 V and ∆VZ2 = 0.6 V across defined current steps.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.8 V (min) to 3.2 V (max) at IZ = 0.5 mA - defines tight tolerance band for low-voltage reference stability |
| Dynamic Impedance (ZZT) | 360 Ω (max) at IZT = 0.5 mA - ensures minimal output voltage variation under load transients |
| Reverse Current (IR) | ≤100 nA at VR = 1.0 V - enables ultra-low quiescent current operation in always-on sensor circuits |
| Power Dissipation (Pd) | 250 mW at Ta = 25°C - supports operation on standard PCBs without forced cooling |
| Junction Temperature (Tj) | –55°C to +175°C - allows deployment in industrial and automotive under-hood environments |
| Temperature Coefficient (γZ) | ±0.5 mV/°C - provides predictable, low-drift reference over temperature for calibration-critical designs |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), molded plastic with navy blue cathode band, 2.0 mm diameter body, 26.0 mm lead length, 0.4 mm lead diameter, 2.4 mm lead spacing - optimized for 5 mm-pitch high-speed automatic insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher potential node; reverse-biased terminal where Zener breakdown occurs |
| 2 | Anode | Connected to lower potential node (typically ground or common return); completes bias path |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee breakdown | VZ–IZ curve remains semilog-linear down to 1 nA - eliminates ambiguity in low-current regulation point |
| Low-noise performance | Approximately 1/10 lower noise than standard Zeners in same voltage class - critical for high-resolution ADC references |
| Low-temperature drift | γZ = ±0.5 mV/°C - enables <±5 mV total drift over –40°C to +85°C without trimming |
| Automated assembly support | MHD package with standardized 5 mm pitch - compatible with high-throughput pick-and-place and wave soldering |
Applications
| Portable Gas Sensor Biasing | Medical Pulse Oximeter Reference |
|---|---|
Use Scenario: Low-power electrochemical gas sensor requiring stable 3.0 V bias in battery-operated handheld analyzers. IC Role / Device Role / Timing Role: Precision Zener reference providing regulated excitation voltage for sensor bridge circuitry. Use Value: Sub-100 nA IR and hard-knee behavior ensure stable bias even as battery voltage drops to 2.8 V, extending usable runtime. |
Use Scenario: Analog front-end in Class II medical pulse oximeters needing low-drift, low-noise reference for photodiode signal conditioning. IC Role / Device Role / Timing Role: Primary voltage reference for transimpedance amplifier and ADC driver stages. Use Value: 360 Ω ZZT and ±0.5 mV/°C γZ minimize gain error and offset drift across clinical operating temperatures (10°C–40°C). |
| Industrial RTD Signal Conditioning | Smart Meter Voltage Reference |
Use Scenario: Two-wire RTD measurement module in programmable logic controllers requiring ratiometric accuracy over wide ambient range. IC Role / Device Role / Timing Role: Stable excitation reference for constant-current source driving platinum RTD elements. Use Value: Tight 2.8–3.2 V VZ tolerance and 175°C Tj rating allow direct PCB mounting near heat-generating power stages without derating. |
Use Scenario: Revenue-grade smart electricity meter needing long-term reference stability under varying grid conditions and thermal cycling. IC Role / Device Role / Timing Role: Secondary reference for metrology ADC calibration, backed by primary bandgap reference. Use Value: Low dynamic impedance (360 Ω max) maintains reference integrity during transient load events caused by RF communication bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBZ5226BS | Zener voltage 3.3 V (±5%), ZZT = 17 Ω at 20 mA - higher test current, softer knee below 100 µA | Higher power handling (350 mW), but less suitable for sub-100 µA biasing due to nonlinearity | Prefer when higher current drive (>1 mA) and tighter absolute VZ tolerance are required over low-current linearity |
| Diodes Incorporated BZX84-C3V0 | Zener voltage 3.0 V (±5%), ZZT = 500 Ω at 5 mA - higher impedance, higher IR (≤500 nA at VR = 1 V) | SOT-23 package - smaller footprint but incompatible with 5 mm-pitch insertion; higher thermal resistance | Choose for space-constrained PCBs where automated insertion is not required and 500 nA IR is acceptable |
Compared with MMBZ5226BS and BZX84-C3V0, the HZS3BLLTD-E delivers superior low-current regulation fidelity and lower noise, making it uniquely suited for precision analog systems operating at microampere bias levels - though its MHD through-hole package requires different assembly logistics.
Availability
HZS3BLLTD-E is available at Aetrix Electronics and suitable for portable instrumentation, medical diagnostics equipment, industrial sensor modules, and smart utility metering requiring stable component supply with full traceability and lifecycle continuity.
Supply support for HZS3BLLTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.
The HZS-LL Series was developed specifically for high-fidelity, low-noise voltage reference needs in battery-powered and thermally variable analog systems - emphasizing hard-knee breakdown, ultra-low leakage, and manufacturability in high-volume assembly.
FAQ
What is the Zener voltage tolerance of HZS3BLLTD-E at 0.5 mA test current?
The HZS3BLLTD-E has a guaranteed Zener voltage range of 2.8 V (minimum) to 3.2 V (maximum) when measured at IZ = 0.5 mA and Ta = 25°C. This ±0.2 V tolerance (±6.7% of nominal 3.0 V) reflects its design for precision low-current reference applications where tight distribution matters more than ultra-narrow absolute tolerance. The HZS3BLLTD-E achieves this via process-controlled planar junction geometry.
Does HZS3BLLTD-E support operation at junction temperatures up to 175°C?
Yes, the HZS3BLLTD-E is rated for a maximum junction temperature (Tj) of +175°C and minimum of –55°C. Its silicon planar construction and MHD package enable reliable operation in high-ambient environments such as industrial motor control enclosures or automotive engine compartments. Derating curves in the datasheet confirm 250 mW power dissipation remains valid up to +100°C ambient before linear reduction begins.
How does the dynamic impedance of HZS3BLLTD-E compare to standard Zener diodes?
The HZS3BLLTD-E specifies a maximum dynamic impedance (ZZT) of 360 Ω at IZT = 0.5 mA - significantly lower than typical 1–5 kΩ values seen in general-purpose Zeners at similar currents. This low ZZT directly improves regulation against load variations and reduces noise coupling into sensitive analog nodes. The HZS3BLLTD-E achieves this via optimized doping profiles and junction geometry.
Is HZS3BLLTD-E suitable for low-noise sensor biasing applications?
Yes, the HZS3BLLTD-E is explicitly designed for low-noise applications: its datasheet states "low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners)." Measured noise performance is validated down to 1 nA, making the HZS3BLLTD-E appropriate for biasing photodiodes, RTDs, and electrochemical sensors where reference-induced noise limits system resolution.
What is the reverse leakage current specification for HZS3BLLTD-E?
The HZS3BLLTD-E guarantees reverse current (IR) ≤ 100 nA when tested at VR = 1.0 V and Ta = 25°C. This ultra-low leakage enables use in always-on, battery-powered systems where standby current must remain below 1 µA. The HZS3BLLTD-E maintains this performance due to its planar junction process and controlled surface passivation - confirmed in the REJ03G0167-0300 datasheet.
HZS3BLLTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS3BLLTD-E FAQ
1.How can I place an order for HZS3BLLTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS3BLLTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS3BLLTD-E reliable?
The price and inventory of HZS3BLLTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS3BLLTD-E is usually 5 days.
3.What payment methods are accepted for HZS3BLLTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS3BLLTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS3BLLTD-E?
HZS3BLLTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS3BLLTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS3BLLTD-E?
For technical support, including HZS3BLLTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS3BLLTD-E requirements.
6.How does Aetrix verify that HZS3BLLTD-E is sourced from the original manufacturer or authorized distributors?
All HZS3BLLTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS3BLLTD-E meets industry standards.
7.What is the process for return or replacement of HZS3BLLTD-E?
All HZS3BLLTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS3BLLTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS3BLLTD-E part is unused and in its original packaging.
Return procedure for HZS3BLLTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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