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Renesas HZS3C3TD-E
- Part No.:
- HZS3C3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS3C3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:17,500
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Product details
Overview
HZS3C3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 3.3 V (min 3.3 V, max 3.5 V), 400 mW power dissipation, and dynamic resistance of 5 Ω at 5 mA test current. It features low leakage current, low zener impedance, and is optimized for 5 mm-pitch high-speed automatic insertion in consumer and industrial PCB assembly.
For engineers reviewing the HZS3C3TD-E datasheet, HZS3C3TD-E pinout, HZS3C3TD-E application, or HZS3C3TD-E equivalent, this device serves as a compact, cost-effective voltage reference in linear regulators, overvoltage protection circuits, and biasing networks where ±3% voltage tolerance and thermal stability down to −55°C are required.
Technical Context
This Zener diode operates in reverse breakdown mode with DC-tested characteristics, exhibiting a zener voltage temperature coefficient near zero (≈0.02 %/°C) at 3.3 V, enabling stable reference performance across ambient temperatures from −55°C to +175°C. Its junction temperature rating of 200°C supports operation in thermally constrained environments.
The device uses a silicon planar construction with a lake-blue cathode band marking, housed in the MHD package (JEITA code GRZZ0002ZC-A), and is rated for 5 µA maximum reverse current at 0.5 V below VZ, ensuring tight regulation under light-load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.3 V min / 3.5 V max at IZ = 5 mA - defines precise clamping threshold for 3.3 V rail stabilization |
| Power Dissipation (Pd) | 400 mW - enables continuous regulation without heatsinking in SMT-compatible layouts |
| Dynamic Resistance (rd) | 5 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Reverse Current (IR) | ≤5 µA at VR = 0.5 V below VZ - guarantees low standby power loss in always-on reference circuits |
| Junction Temperature (Tj) | 200°C - supports reliable operation in high-temperature industrial enclosures or near power components |
| Storage Temperature | −55°C to +175°C - compatible with extended-range reflow profiles and harsh environmental storage |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial-lead glass-passivated silicon planar diode, 2.0 mm diameter × 26.0 mm length, 0.084 g typical mass, lake-blue cathode band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference node | Connected to regulated output or higher-potential rail; polarity-sensitive for correct Zener conduction |
| 2 (Anode) | Reference ground return path | Typically tied to system ground or lower-potential rail; completes reverse-bias current path |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 5 Ω at 5 mA - minimizes AC ripple coupling into regulated nodes |
| Wide zener voltage spectrum | 1.6 V to 38 V coverage across HZS family - allows single-source sourcing for multi-rail designs |
| High-speed insertion compatibility | 5 mm pitch - supports automated placement in high-volume consumer electronics manufacturing |
| Stable temperature coefficient | ≈0.02 %/°C at 3.3 V - reduces drift-induced error in precision analog sensing front-ends |
Applications
| USB Peripheral Power Regulation | Industrial Sensor Biasing |
|---|---|
|
Use Scenario: Regulating 3.3 V supply for USB-connected sensors in factory-floor data loggers. IC Role / Device Role / Timing Role: Voltage reference and overvoltage clamp protecting downstream ADCs and microcontrollers. Use Value: Maintains <±3% output accuracy across −40°C to +85°C ambient, preventing sensor calibration drift. |
Use Scenario: Providing stable bias voltage for bridge-type pressure transducers in HVAC control units. IC Role / Device Role / Timing Role: Precision DC reference source for Wheatstone bridge excitation. Use Value: Delivers 5 Ω dynamic impedance to suppress supply noise coupling into millivolt-level bridge outputs. |
| Consumer Audio DAC Reference | Programmable Logic Controller I/O Protection |
|
Use Scenario: Generating clean 3.3 V reference for audio DACs in Bluetooth speakers. IC Role / Device Role / Timing Role: Low-noise voltage shunt regulator isolating DAC analog section from noisy digital rails. Use Value: 5 µA max reverse leakage prevents loading of high-impedance DAC reference inputs. |
Use Scenario: Clamping input signal lines against ESD and surge events in PLC digital I/O modules. IC Role / Device Role / Timing Role: Fast-response transient voltage suppressor on 3.3 V logic-level signal paths. Use Value: 400 mW power rating absorbs repetitive 1 kV/500 A surge pulses per IEC 61000-4-5 Level 3. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C3V3 (ON Semiconductor) | Same 3.3 V nominal VZ, but 500 mW Pd and 10 Ω rd; DO-35 package, not MHD | Higher power margin but larger footprint; less suitable for high-density 5 mm-pitch insertion | Select when board space permits larger DO-35 and higher surge energy absorption is needed |
| MMSZ4685 (Diodes Inc.) | SOD-123 package, 3.3 V VZ, 300 mW Pd, 10 Ω rd; surface-mount only, no axial leads | Requires rework of pick-and-place program and footprint; incompatible with through-hole auto-insertion | Choose only for fully SMT designs where board real estate is constrained and leaded assembly is excluded |
Compared with BZX55C3V3 and MMSZ4685, the HZS3C3TD-E offers optimal balance of axial-leaded manufacturability, 400 mW robustness, and 5 Ω regulation fidelity-making it preferred for cost-sensitive, high-volume industrial power-supply trimming where legacy insertion equipment remains in use.
Availability
HZS3C3TD-E is available at Aetrix Electronics and suitable for USB peripheral power regulation, industrial sensor biasing, consumer audio DAC reference, and programmable logic controller I/O protection requiring stable component supply and long-term obsolescence management.
Supply support for HZS3C3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series belongs to Renesas' discrete voltage reference product line, engineered specifically for high-reliability, low-cost stabilized power supply applications in standard-grade commercial and industrial equipment.
FAQ
What is the exact zener voltage range specified for HZS3C3TD-E?
The HZS3C3TD-E has a guaranteed zener voltage range of 3.3 V minimum to 3.5 V maximum when tested at 5 mA zener current (IZ) and 25°C ambient temperature. This 3.3 V nominal grade falls within the HZS3 series C3 classification, and the tolerance band is confirmed in the Electrical Characteristics table on page 2 of Renesas document REJ03G0184-0500 Rev.5.00.
Is HZS3C3TD-E suitable for surface-mount assembly?
No, the HZS3C3TD-E uses the MHD axial-leaded package (JEITA GRZZ0002ZC-A) with 26 mm body length and 2.0 mm diameter, designed explicitly for through-hole mounting and 5 mm-pitch high-speed automatic insertion. It is not compatible with reflow soldering or pick-and-place SMT processes. For SMT alternatives, consider Renesas' MZ series or third-party SOD-123 equivalents.
What is the maximum reverse current specification for HZS3C3TD-E?
The HZS3C3TD-E specifies a maximum reverse current (IR) of 5 µA when measured at a reverse voltage (VR) of 0.5 V below its nominal zener voltage - i.e., at ≤2.8 V. This parameter is defined in the Electrical Characteristics table under "Reverse Current" for the HZS3 C3 grade and ensures minimal quiescent power draw in reference applications.
Does HZS3C3TD-E have automotive qualification?
No, the HZS3C3TD-E is classified as a "Standard" quality grade device per Renesas' quality grading system (page 1 of REJ03G0184-0500), intended for computers, office equipment, audiovisual gear, and industrial robots - not for automotive, medical, or aerospace use. It lacks AEC-Q200 stress testing and is not recommended for safety-critical vehicle subsystems.
What is the thermal resistance junction-to-ambient for HZS3C3TD-E?
Renesas does not publish a specific RθJA value for the HZS3C3TD-E in the provided datasheet. However, the device's 400 mW power dissipation rating and 200°C maximum junction temperature imply an effective RθJA of approximately 450°C/W under still-air conditions - derived from ΔT = P × RθJA. For thermal design, users must rely on PCB copper area, airflow, and mounting orientation to maintain Tj ≤ 200°C.
HZS3C3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS3C3TD-E FAQ
1.How can I place an order for HZS3C3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS3C3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS3C3TD-E reliable?
The price and inventory of HZS3C3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS3C3TD-E is usually 5 days.
3.What payment methods are accepted for HZS3C3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS3C3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS3C3TD-E?
HZS3C3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS3C3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS3C3TD-E?
For technical support, including HZS3C3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS3C3TD-E requirements.
6.How does Aetrix verify that HZS3C3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS3C3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS3C3TD-E meets industry standards.
7.What is the process for return or replacement of HZS3C3TD-E?
All HZS3C3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS3C3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS3C3TD-E part is unused and in its original packaging.
Return procedure for HZS3C3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS3C3TD-E Tags
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BZT52C5V6T-7
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MMSZ5231B-7-F
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BZX84C3V3LT1G
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MMSZ5245BS-7-F
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MMSZ4682T1G
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BZT52C15S-7-F
Diodes Incorporated
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
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BZT52C3V6LP-7
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SMAZ12-13-F
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