Renesas HZS4.3NB2TA-E

Overview

HZS4.3NB2TA-E from Renesas Electronics is a silicon planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits, with a nominal zener voltage of 4.3 V (B2 grade: 4.20–4.40 V), maximum power dissipation of 400 mW, dynamic resistance of 120 Ω at 5 mA, and reverse current ≤5 μA at 1.0 V. It is used in precision reference circuits, overvoltage protection, and biasing networks for analog ICs.

For engineers reviewing the HZS4.3NB2TA-E datasheet, HZS4.3NB2TA-E pinout, HZS4.3NB2TA-E application, or HZS4.3NB2TA-E equivalent, key selection criteria include zener voltage tolerance (±2.3%), thermal coefficient (≈−2.5 mV/°C near 4.3 V), junction temperature limit (200°C), package compatibility with 5 mm-pitch automated insertion, and compliance with Renesas Standard quality grade for industrial and consumer equipment.

Technical Context

The HZS4.3NB2TA-E operates as a two-terminal voltage reference device relying on controlled avalanche and Zener breakdown mechanisms. Its B2 grade specifies tight zener voltage tolerance (4.20–4.40 V) and guarantees dynamic resistance ≤120 Ω at I_Z = 5 mA, enabling stable regulation under moderate load variation.

Designed for surface-mount-compatible through-hole mounting in MHD package, it features low leakage (I_R ≤5 μA at V_R = 1.0 V), high thermal stability (T_j up to 200°C), and storage temperature range from −55°C to +175°C - suitable for environments requiring robustness without active thermal management.

Key Specifications

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), axial lead, 2.0 mm diameter body, 26.0 mm lead length, 5 mm pitch - optimized for high-speed automatic insertion and manual prototyping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4733A and BZX55-C4V3, the HZS4.3NB2TA-E offers superior voltage grading (±2.3% vs. ±5%), lower thermal drift near 4.3 V, and MHD package compatibility with legacy 5 mm-pitch assembly lines - making it optimal for space-constrained, high-accuracy industrial references.

Availability

HZS4.3NB2TA-E is available at Aetrix Electronics and suitable for stabilized power supply design, analog sensor biasing, overvoltage protection circuits, and microcontroller reset generation requiring stable component supply and consistent B2-grade voltage tolerance.

Supply support for HZS4.3NB2TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and consumer markets.

The HZS-N Series was developed as a family of precision silicon planar Zener diodes targeting cost-effective, high-reliability voltage reference and stabilization in industrial power supplies and analog signal conditioning systems.

FAQ

What is the exact zener voltage range for HZS4.3NB2TA-E at 5 mA test current?

The HZS4.3NB2TA-E has a guaranteed zener voltage range of 4.20 V to 4.40 V when tested at I_Z = 5 mA, per its B2 grade specification in the Renesas REJ03G0185-0300 datasheet. This ±2.3% tolerance enables tighter system-level voltage budgeting than standard ±5% Zeners. The HZS4.3NB2TA-E maintains this performance across its rated operating temperature range without recalibration.

Is HZS4.3NB2TA-E compatible with automated through-hole insertion equipment?

Yes, the HZS4.3NB2TA-E uses the MHD package with 5 mm lead pitch and standardized axial geometry, explicitly qualified for high-speed automatic insertion per the datasheet's "Suitable for 5mm-pitch high speed automatic insertion" feature statement. Its 2.0 mm body diameter and 26.0 mm lead length meet JEDEC and IPC guidelines for wave soldering and pick-and-place compatibility.

What is the maximum allowable power dissipation for HZS4.3NB2TA-E on a standard PCB?

The HZS4.3NB2TA-E has a rated power dissipation of 400 mW at T_a = 25°C on a 100 × 180 × 1.6 mm paper phenol PCB, as shown in Figure 3 of the datasheet. Derating begins above 25°C ambient, reaching zero dissipation at ~125°C ambient. For continuous operation, design must ensure junction temperature stays ≤200°C using actual board thermal resistance.

Does HZS4.3NB2TA-E meet RoHS compliance requirements?

Yes, HZS4.3NB2TA-E complies with the EU RoHS Directive, as confirmed by Renesas' environmental compliance documentation and product marking. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and is rated for Standard quality grade applications including office equipment, industrial robots, and consumer electronics.

How does the temperature coefficient of HZS4.3NB2TA-E affect its performance in a 0°C to 70°C operating range?

Based on Figure 2 in the datasheet, the HZS4.3NB2TA-E exhibits a zener voltage temperature coefficient of approximately −2.5 mV/°C near 4.3 V. Over a 0°C to 70°C range, this results in a total drift of ~−175 mV - or −4.1% of nominal V_Z. This predictable negative drift can be compensated in circuit design using complementary components, and is significantly lower than that of lower-voltage Zeners in the same series.