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Renesas HZS4.7NB3TD-E

Part No.:
HZS4.7NB3TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS4.7NB3TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:15,000

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Product details

Overview

HZS4.7NB3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 4.71 V to 4.91 V at 5 mA test current, with dynamic resistance of 100 Ω max, 400 mW power dissipation, and operates across –55°C to +175°C storage temperature range. It is used in voltage reference circuits for sensor signal conditioning and microcontroller reset supervision.

For engineers reviewing the HZS4.7NB3TD-E datasheet, HZS4.7NB3TD-E pinout, HZS4.7NB3TD-E application, or HZS4.7NB3TD-E equivalent, this page provides verified electrical parameters, package mapping to MHD (JEITA GRZZ0002ZC-A), cathode/anode terminal roles, thermal derating behavior, and two validated alternative Zener diodes for supply rail clamping and reference design reuse.

Technical Context

This device employs a planar diffusion process to achieve stable zener breakdown with low leakage (<5 µA at VR = 1.0 V) and tight voltage tolerance (±2.1% typical for B3 grade). Its junction temperature rating of 200°C supports operation in thermally demanding industrial environments.

The MHD package enables high-speed automatic insertion on 5 mm-pitch PCBs and features a black cathode band for polarity identification. Thermal resistance is optimized for surface-mount-compatible through-hole mounting with 26 mm lead length and 2.0 mm body diameter.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 4.71 V min to 4.91 V max at IZ = 5 mA - defines regulated output voltage window under nominal bias
Dynamic Resistance (rd) ≤100 Ω at IZ = 5 mA - determines load regulation sensitivity and ripple rejection capability
Power Dissipation (Pd) 400 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating
Reverse Current (IR) ≤5 µA at VR = 1.0 V - ensures minimal quiescent current in standby or high-impedance reference nodes
Junction Temperature (Tj) 200°C - allows reliable operation in enclosed enclosures or near heat-generating components
Storage Temperature –55°C to +175°C - supports automotive under-hood and industrial control cabinet deployment
Zener Voltage Tempco ≈+2.0 mV/°C near 4.7 V - enables predictable drift compensation in temperature-stable references

Pinout & Package

The HZS4.7NB3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, glass-passivated silicon planar Zener diode with 2.0 mm body diameter, 26 mm lead length, and black cathode band marking. Leads are tinned for solderability and compatible with wave and selective soldering processes.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) High-side reference node Connected to regulated voltage rail; reverse-biased during normal operation to maintain VZ
2 (Anode) Low-side return path Typically tied to ground or common reference; completes bias current path for zener conduction

Key Features

Feature Design Value
Low zener impedance 100 Ω max ensures stable regulation under varying load currents in feedback networks
400 mW power rating Supports >10 mA bias current at 4.7 V without external heatsinking in ambient ≤50°C
B3 grade voltage tolerance ±2.1% VZ spread enables tighter system-level voltage margining than B1/B2 grades
5 mm-pitch insertable Enables automated placement in legacy through-hole production lines without retooling
–55°C to +175°C storage range Validates suitability for long-term storage in uncontrolled warehouse environments prior to assembly

Applications

Microcontroller Reset Circuit Sensor Signal Conditioning

Use Scenario: Provides clean, temperature-compensated reset threshold for 3.3 V or 5 V microcontrollers during power-up and brownout events.

IC Role / Device Role / Timing Role: Voltage reference element in RC-based reset generator or dedicated reset IC input stage.

Use Value: Tight 4.71–4.91 V tolerance ensures deterministic reset assertion across temperature and unit-to-unit variation.

Use Scenario: Stabilizes excitation voltage for resistive bridge sensors (e.g., strain gauges, RTDs) in industrial transmitters.

IC Role / Device Role / Timing Role: Precision shunt reference supplying constant current or fixed bias to sensor elements.

Use Value: Low dynamic resistance (≤100 Ω) minimizes sensor output error caused by supply impedance modulation.

Industrial Power Supply Clamp LED Current Regulation Reference

Use Scenario: Clamps transient overvoltage on 5 V auxiliary rails in PLC I/O modules exposed to inductive switching noise.

IC Role / Device Role / Timing Role: Shunt protection device limiting rail excursion to safe levels during ESD or surge events.

Use Value: 400 mW rating sustains 80 ms surge pulses per IEC 61000-4-5 Level 3 without degradation.

Use Scenario: Sets reference voltage for constant-current LED driver ICs in signage and panel indicator applications.

IC Role / Device Role / Timing Role: Stable voltage source for op-amp or comparator feedback in current-sense loop.

Use Value: +2.0 mV/°C tempco aligns closely with LED forward voltage drift, improving thermal stability of luminance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4733A Zener voltage 5.1 V ±5%, Pd = 1 W, DO-41 package, higher power but looser tolerance Less precise for reset thresholds; better suited for higher-energy clamping Select when >500 mW surge handling is required and ±5% VZ is acceptable
BZX55-C4V7 Zener voltage 4.7 V ±5%, Pd = 500 mW, DO-35 package, axial leads, wider VZ spread Lower cost but reduced accuracy; not rated for 200°C junction temperature Choose for cost-sensitive consumer applications where 175°C max Tj suffices

Compared with HZS4.7NB3TD-E, the 1N4733A offers higher power handling but sacrifices voltage accuracy and thermal robustness, while the BZX55-C4V7 trades junction temperature capability and grade-specific tolerance for lower procurement cost in non-industrial designs.

Availability

HZS4.7NB3TD-E is available at Aetrix Electronics and suitable for industrial power supply design, sensor interface circuitry, and microcontroller reset supervision requiring stable component supply and long-lifecycle support.

Supply support for HZS4.7NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The HZS-N Series was developed as a family of precision silicon planar Zener diodes targeting stable voltage reference and overvoltage protection in industrial control, instrumentation, and power management systems.

FAQ

What is the exact zener voltage range for HZS4.7NB3TD-E at 5 mA?

The HZS4.7NB3TD-E has a guaranteed zener voltage range of 4.71 V minimum to 4.91 V maximum when tested at IZ = 5 mA and Ta = 25°C. This B3-grade specification reflects ±2.1% tolerance around the nominal 4.7 V rating, confirmed in Renesas document REJ03G0185-0300 Rev.3.00.

Does HZS4.7NB3TD-E support high-temperature operation?

Yes, HZS4.7NB3TD-E is rated for junction temperatures up to 200°C and storage temperatures from –55°C to +175°C. Its planar silicon construction and glass passivation enable reliable performance in industrial motor drives and power supply environments where ambient temperatures exceed 85°C.

What package type does HZS4.7NB3TD-E use, and is it RoHS-compliant?

HZS4.7NB3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, glass-passivated device with 2.0 mm body diameter and 26 mm leads. Per Renesas environmental compliance documentation, the HZS-N Series meets EU RoHS Directive requirements with lead-free terminations and compliant materials.

How does the dynamic resistance of HZS4.7NB3TD-E affect its regulation performance?

The dynamic resistance of HZS4.7NB3TD-E is specified at ≤100 Ω at IZ = 5 mA. This low value ensures minimal output voltage deviation under changing load conditions - for example, a 1 mA change in zener current causes less than 100 mV shift in regulated voltage, critical for precision reference stability in ADC biasing or op-amp feedback networks.

Can HZS4.7NB3TD-E be used as a direct replacement for older NEC-brand Zener diodes?

Yes, HZS4.7NB3TD-E is the Renesas Electronics successor to the original NEC HZS4.7NB3 part following the 2010 merger. Electrical specifications, package dimensions, and marking remain identical; Renesas explicitly states that documents referencing NEC Electronics are valid Renesas documents, confirming full form-fit-function compatibility.

HZS4.7NB3TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS4.7NB3TD-E FAQ

1.How can I place an order for HZS4.7NB3TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS4.7NB3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS4.7NB3TD-E reliable?

The price and inventory of HZS4.7NB3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4.7NB3TD-E is usually 5 days.

3.What payment methods are accepted for HZS4.7NB3TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4.7NB3TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS4.7NB3TD-E?

HZS4.7NB3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS4.7NB3TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS4.7NB3TD-E?

For technical support, including HZS4.7NB3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4.7NB3TD-E requirements.

6.How does Aetrix verify that HZS4.7NB3TD-E is sourced from the original manufacturer or authorized distributors?

All HZS4.7NB3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4.7NB3TD-E meets industry standards.

7.What is the process for return or replacement of HZS4.7NB3TD-E?

All HZS4.7NB3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4.7NB3TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS4.7NB3TD-E part is unused and in its original packaging.

Return procedure for HZS4.7NB3TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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