My Inquiry
My Account
Renesas HZS4A1J-E
- Part No.:
- HZS4A1J-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS4A1J-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:11,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS4A1J-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies. It delivers a nominal zener voltage of 3.4–3.6 V at 5 mA, with dynamic resistance ≤100 Ω, maximum power dissipation of 400 mW, and reverse leakage current ≤1.0 µA at VR = 1.0 V - enabling reliable low-noise reference generation in compact DC-DC feedback loops.
For engineers reviewing the HZS4A1J-E datasheet, HZS4A1J-E pinout, HZS4A1J-E application, or HZS4A1J-E equivalent, key selection criteria include its tight 3.4–3.6 V zener tolerance (Grade A1), low 100 Ω dynamic impedance, 400 mW power rating in DO-35 package, and suitability for high-speed automated insertion on 5 mm-pitch PCBs.
Technical Context
This discrete Zener diode operates as a two-terminal shunt voltage reference, leveraging silicon epitaxial planar construction to achieve stable breakdown characteristics under DC bias. Its junction temperature rating of 200°C and storage range of −55°C to +175°C support operation in industrial and automotive ambient environments.
The device exhibits a zener voltage temperature coefficient optimized for mid-range voltages (≈−2.5 mV/°C near 3.5 V, per Fig.2), and its dynamic resistance remains ≤100 Ω at IZ = 5 mA - critical for maintaining regulation accuracy under varying load currents in linear regulator feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.4–3.6 V at IZ = 5 mA - defines precise DC reference level for feedback networks |
| Dynamic Resistance (rd) | ≤100 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Maximum Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous regulation in space-constrained PCB layouts |
| Reverse Leakage Current (IR) | ≤1.0 µA at VR = 1.0 V - reduces quiescent current error in low-power references |
| Junction Temperature (Tj) | 200°C - enables reliable operation in thermally demanding enclosures or near power stages |
| Package | DO-35 (glass axial, 2.5 mm diameter × 5 mm length) - compatible with standard 5 mm-pitch auto-insertion equipment |
Pinout & Package
DO-35 glass axial package with cathode band marking; leads are tinned and suitable for wave or reflow soldering. Cathode is marked by a colored band; anode is unmarked lead.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Breakdown terminal | Connected to regulated node; conducts when reverse-biased above VZ |
| Anode (unmarked end) | Reference return | Typically tied to ground or common reference potential in shunt regulator topology |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | ≤100 Ω at 5 mA - improves line/load regulation in feedback circuits |
| Tight zener voltage tolerance (Grade A1) | ±0.1 V window (3.4–3.6 V) - eliminates need for external trimming in many applications |
| High power density | 400 mW in DO-35 - enables robust voltage clamping without heatsinking in low-current rails |
| Automated assembly compatibility | 5 mm pitch lead spacing - supports high-throughput placement in consumer and industrial manufacturing |
Applications
| Switched-Mode Power Supply Feedback | Low-Power Reference Generator |
|---|---|
Use Scenario: Regulating output voltage in isolated flyback converters via optocoupler-coupled feedback loop. IC Role / Device Role / Timing Role: Shunt voltage reference providing precise 3.5 V threshold to TL431-like controller input. Use Value: Tight 3.4–3.6 V tolerance and ≤100 Ω rd ensure ±1% output regulation across line/load/temperature. | Use Scenario: Generating stable 3.5 V reference for microcontroller ADC or sensor biasing in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Passive two-terminal reference source replacing higher-cost IC references where ultra-low drift is not required. Use Value: 1.0 µA max reverse leakage at 1.0 V minimizes standby current drain while maintaining adequate accuracy. |
| Overvoltage Clamp Protection | Industrial Sensor Signal Conditioning |
Use Scenario: Clamping transient surges on 5 V logic rails during ESD events or inductive switching. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting rail voltage to ≤3.6 V before downstream IC damage occurs. Use Value: 400 mW Pd and 200°C Tj allow brief surge absorption without thermal runaway or parameter shift. | Use Scenario: Providing excitation voltage and offset compensation for bridge-based pressure sensors in factory automation systems. IC Role / Device Role / Timing Role: Stable bias source referenced to system ground, rejecting common-mode noise on long sensor cables. Use Value: Low temperature coefficient (~−2.5 mV/°C) and stable rd maintain sensor gain accuracy over −40°C to +125°C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4728A (ON Semiconductor) | Zener voltage 3.3 V (±5%), rd = 100 Ω, Pd = 1.0 W, DO-41 package | Higher power rating but looser tolerance; requires layout change due to larger DO-41 footprint | Select when higher surge energy handling is needed and board space allows larger package |
| BZX55-C3V3 (Nexperia) | Zener voltage 3.3 V (±5%), rd = 90 Ω, Pd = 500 mW, DO-35 package | Nominal voltage 0.1–0.3 V lower; tighter rd but wider VZ tolerance than HZS4A1J-E Grade A1 | Select when cost sensitivity outweighs need for sub-0.1 V VZ precision in non-critical references |
Compared with 1N4728A and BZX55-C3V3, HZS4A1J-E offers the narrowest VZ tolerance (±0.1 V) in DO-35, making it optimal for designs requiring minimal post-production calibration or tight closed-loop regulation without trimming.
Availability
HZS4A1J-E is available at Aetrix Electronics and suitable for switched-mode power supply feedback, low-power reference generation, and overvoltage clamp protection requiring stable component supply and consistent parametric performance across production lots.
Supply support for HZS4A1J-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.
HZS4A1J-E belongs to ROHM's HZS Series of silicon epitaxial planar Zener diodes, engineered specifically for high-precision, low-drift voltage stabilization in compact power management circuits.
FAQ
What is the exact zener voltage range specified for HZS4A1J-E?
HZS4A1J-E is rated for a zener voltage range of 3.4 V to 3.6 V at test current IZ = 5 mA, corresponding to Grade A1 in the HZS Series specification table. This ±0.1 V tolerance is tighter than standard ±5% Zeners and is confirmed in the Electrical Characteristics table on page 3 of the ADE-208-120A(Z) datasheet revision 1.
Does HZS4A1J-E have a specified temperature coefficient?
Yes - while not explicitly listed per grade in the tabular data, Figure 2 ("Temperature Coefficient vs. Zener Voltage") in the HZS Series datasheet shows that devices with VZ ≈ 3.5 V exhibit a temperature coefficient of approximately −2.5 mV/°C. This value is typical for mid-voltage Zeners and applies directly to HZS4A1J-E based on its nominal 3.5 V rating.
What is the maximum reverse leakage current for HZS4A1J-E and under what condition?
HZS4A1J-E has a maximum reverse leakage current (IR) of 1.0 µA, measured at reverse voltage VR = 1.0 V and ambient temperature Ta = 25°C. This value is specified in the "Electrical Characteristics" table for HZS4 Grade A1 on page 3 of the official ROHM datasheet ADE-208-120A(Z).
Is HZS4A1J-E compatible with lead-free reflow soldering processes?
Yes - HZS4A1J-E uses tinned leads and a glass-passivated DO-35 package rated for standard lead-free reflow profiles. The device's 200°C maximum junction temperature and construction are fully compatible with JEDEC J-STD-020-compliant peak temperatures up to 260°C, provided time-above-liquidus remains within specification limits.
Can HZS4A1J-E be used in place of a 3.3 V Zener like BZX55-C3V3?
HZS4A1J-E is not a direct functional replacement for 3.3 V Zeners: its nominal voltage is 3.5 V (3.4–3.6 V range), which is 0.2 V higher than BZX55-C3V3's 3.3 V (3.14–3.47 V). Substituting without circuit review may cause over-regulation or feedback loop instability; verify reference node voltage requirements before interchange.
HZS4A1J-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS4A1J-E FAQ
1.How can I place an order for HZS4A1J-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS4A1J-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS4A1J-E reliable?
The price and inventory of HZS4A1J-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4A1J-E is usually 5 days.
3.What payment methods are accepted for HZS4A1J-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4A1J-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS4A1J-E?
HZS4A1J-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS4A1J-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS4A1J-E?
For technical support, including HZS4A1J-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4A1J-E requirements.
6.How does Aetrix verify that HZS4A1J-E is sourced from the original manufacturer or authorized distributors?
All HZS4A1J-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4A1J-E meets industry standards.
7.What is the process for return or replacement of HZS4A1J-E?
All HZS4A1J-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4A1J-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS4A1J-E part is unused and in its original packaging.
Return procedure for HZS4A1J-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS4A1J-E Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
