My Inquiry
My Account
Renesas HZS4B1TD-E
- Part No.:
- HZS4B1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS4B1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:20,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS4B1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, featuring a nominal zener voltage of 4.0–4.2 V, 400 mW maximum power dissipation, and low dynamic impedance (≤100 Ω at 5 mA), commonly deployed in reference voltage generation for analog sensors and microcontroller reset circuits.
For engineers reviewing the HZS4B1TD-E datasheet, HZS4B1TD-E pinout, HZS4B1TD-E application, or HZS4B1TD-E equivalent, this device is evaluated for use in compact DC-DC feedback networks, low-current biasing, and voltage clamping where tight tolerance (±0.1 V), low leakage (<5 µA at 0.5 V), and thermal stability (−55 to +175 °C storage) are required.
Technical Context
This Zener diode operates in reverse breakdown mode with a specified test current of 5 mA, delivering stable regulation across ambient temperatures up to 75 °C before derating begins. Its planar construction ensures consistent junction characteristics and low parameter variation across production lots.
The device exhibits a negative temperature coefficient near 4 V (≈−3.5 mV/°C), requiring compensation in high-precision references; its 2.0 mm diameter MHD package supports high-speed automatic insertion on 5 mm pitch PCBs with cathode band polarity marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.0–4.2 V at IZ = 5 mA - defines regulated output level for feedback or reference circuits |
| Power Dissipation (Pd) | 400 mW max at Ta = 25 °C - sets upper limit for continuous power handling without heatsinking |
| Dynamic Resistance (rd) | ≤100 Ω at IZ = 5 mA - determines regulation stiffness and ripple rejection in shunt configurations |
| Reverse Leakage (IR) | ≤5 µA at VR = 1.0 V - minimizes parasitic current draw in battery-powered or high-impedance nodes |
| Junction Temperature (Tj) | 200 °C max - enables operation in thermally constrained enclosures with adequate PCB copper area |
| Package Type | MHD (2.0 mm diameter glass-passivated DO-35 variant) - compatible with standard 5 mm pitch auto-insertion equipment |
Pinout & Package
The HZS4B1TD-E uses the MHD axial-leaded package (JEITA code GRZZ0002ZC-A), with 2.0 mm body diameter, 26.0 mm lead length, and lake-blue cathode band marking. Leads are tinned copper-clad steel, suitable for wave soldering and hand assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated voltage node; reverse-biased terminal during normal Zener operation |
| 2 (Unbanded End) | Anode | Connected to ground or lower-potential rail; completes current path during breakdown conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low Zener Impedance | ≤100 Ω at 5 mA - improves load regulation and reduces output voltage drift under varying current demand |
| Wide Zener Voltage Range Coverage | Part of HZS Series spanning 1.6–38 V - enables standardized sourcing across multiple voltage rails in one design family |
| High-Temperature Storage Capability | −55 to +175 °C - supports use in automotive under-hood or industrial control environments with wide ambient swings |
| Automated Insertion Compatibility | 5 mm pitch, MHD package - reduces assembly cost and improves placement repeatability in high-volume manufacturing |
Applications
| Microcontroller Reset Circuit | ADC Reference Voltage Source |
|---|---|
Use Scenario: Provides stable 4.1 V threshold to trigger POR or brown-out detection in 3.3 V MCU systems. IC Role / Device Role / Timing Role: Voltage reference element defining logic-level transition point for reset assertion. Use Value: Tight ±0.1 V tolerance ensures deterministic reset timing across temperature and supply variance. |
Use Scenario: Supplies precise 4.1 V reference to 12-bit SAR ADC in portable sensor node. IC Role / Device Role / Timing Role: Shunt voltage reference establishing full-scale input range for analog-to-digital conversion. Use Value: Low 5 µA leakage prevents loading of high-impedance sensor front-end while maintaining <0.5 LSB error. |
| Low-Power Sensor Biasing | Overvoltage Clamp for I/O Protection |
Use Scenario: Biases photodiode amplifier stage in battery-operated gas detector. IC Role / Device Role / Timing Role: Stable DC bias generator setting op-amp common-mode voltage. Use Value: 400 mW rating allows brief surge handling during cold-start without degradation; 200 °C Tj margin prevents thermal runaway. |
Use Scenario: Clamps 3.3 V GPIO line against ESD transients from external connectors. IC Role / Device Role / Timing Role: Transient voltage suppressor limiting peak excursion to ≤4.2 V. Use Value: Fast response (ns-scale) and low rd ensure clamping within IEC 61000-4-2 Level 4 compliance margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A (ON Semiconductor) | Zener voltage 5.1 V ±5 %, Pd = 1 W, DO-41 package (3.6 mm diameter) | Higher power and looser tolerance; requires PCB layout change due to larger footprint | Select when higher surge energy absorption is needed and 5.1 V regulation suffices |
| BZX55-C4V3 (Vishay) | Zener voltage 4.3 V ±5 %, Pd = 500 mW, DO-35 package (same 2.0 mm diameter) | 0.2 V higher nominal VZ, wider tolerance band, identical MHD-compatible mechanical form | Choose for drop-in replacement where 4.3 V is acceptable and tighter thermal coefficient not critical |
Compared with HZS4B1TD-E, the 1N4733A offers greater power headroom but sacrifices precision and board-space efficiency, while the BZX55-C4V3 matches the MHD footprint and power rating but trades 0.1–0.2 V higher nominal voltage and ±5 % tolerance for broader vendor availability.
Availability
HZS4B1TD-E is available at Aetrix Electronics and suitable for microcontroller reset circuits, ADC reference sources, low-power sensor biasing, and overvoltage clamping requiring stable component supply with traceable lot control and RoHS-compliant packaging.
Supply support for HZS4B1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and consumer markets.
The HZS Series was developed as a family of precision silicon planar Zener diodes targeting cost-sensitive, space-constrained power regulation and voltage reference applications in office equipment, industrial controls, and consumer electronics.
FAQ
What is the exact zener voltage range specified for HZS4B1TD-E?
The HZS4B1TD-E has a guaranteed zener voltage range of 4.0 V to 4.2 V when tested at IZ = 5 mA and Ta = 25 °C, corresponding to Grade B1 within the HZS4 family. This 0.2 V window reflects tight process control for applications demanding stable reference points without post-calibration.
Is HZS4B1TD-E suitable for surface-mount assembly?
No, HZS4B1TD-E is an axial-leaded device in the MHD package (JEITA GRZZ0002ZC-A), designed for through-hole mounting and high-speed automatic insertion on 5 mm pitch boards. It is not a surface-mount component and lacks solder pads or tape-and-reel packaging for SMT lines.
What is the maximum reverse leakage current for HZS4B1TD-E at 1.0 V?
The maximum reverse leakage current for HZS4B1TD-E is 5 µA when measured at VR = 1.0 V and Ta = 25 °C. This low leakage supports use in ultra-low-power circuits such as battery-backed real-time clocks or energy-harvesting sensor nodes where standby current must remain below 10 µA.
Does HZS4B1TD-E have a specified temperature coefficient?
Yes, the HZS4B1TD-E exhibits a zener voltage temperature coefficient of approximately −3.5 mV/°C near its 4.1 V operating point, as confirmed by Figure 2 in the official Renesas datasheet REJ03G0184-0500. This negative coefficient must be accounted for in precision reference designs operating across −40 to +85 °C.
Can HZS4B1TD-E replace a 3.3 V Zener diode in a circuit?
No - HZS4B1TD-E is rated for 4.0–4.2 V regulation and is not a functional substitute for a 3.3 V Zener. Using it in place of a 3.3 V device would raise the regulated voltage by ~0.7–0.9 V, potentially exceeding IC absolute maximum ratings or disrupting logic thresholds. Select HZS3B3TD-E (3.3–3.5 V) instead.
HZS4B1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS4B1TD-E FAQ
1.How can I place an order for HZS4B1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS4B1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS4B1TD-E reliable?
The price and inventory of HZS4B1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4B1TD-E is usually 5 days.
3.What payment methods are accepted for HZS4B1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4B1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS4B1TD-E?
HZS4B1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS4B1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS4B1TD-E?
For technical support, including HZS4B1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4B1TD-E requirements.
6.How does Aetrix verify that HZS4B1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS4B1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4B1TD-E meets industry standards.
7.What is the process for return or replacement of HZS4B1TD-E?
All HZS4B1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4B1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS4B1TD-E part is unused and in its original packaging.
Return procedure for HZS4B1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS4B1TD-E Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
