Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZS4B2TD-E

Part No.:
HZS4B2TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS4B2TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:50,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZS4B2TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 4.2 V (min 4.0 V, max 4.4 V), 400 mW power dissipation, and dynamic resistance of 1.0 Ω at 5 mA test current. It operates within −55°C to +175°C storage range and is used in industrial control logic supply rails and sensor biasing circuits.

For engineers reviewing the HZS4B2TD-E datasheet, HZS4B2TD-E pinout, HZS4B2TD-E application, or HZS4B2TD-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low dynamic impedance for stable regulation under load transients, DC-tested characteristics, and compatibility with 5 mm-pitch automated insertion equipment.

Technical Context

The HZS4B2TD-E employs a silicon planar junction structure optimized for low leakage and tight zener voltage distribution across grade B2 (±0.2 V). Its 400 mW power rating enables operation up to 100 mA at 4.2 V without thermal derating below 70°C ambient.

Zener voltage temperature coefficient is −3.5 mV/°C (typical) per Figure 2, indicating predictable negative drift over temperature - critical for reference stability in non-compensated analog circuits. Reverse current remains ≤1.0 µA at VR = 1.0 V, supporting low-quiescent-current designs.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 4.0 V min / 4.4 V max at IZ = 5 mA - defines regulation window for ±0.2 V tolerance design margin
Power Dissipation (Pd) 400 mW at Ta = 25°C - supports continuous 95 mA operation at 4.2 V before thermal limit
Dynamic Resistance (rd) 1.0 Ω max at IZ = 5 mA - ensures <10 mV output shift per 10 mA load change
Reverse Current (IR) ≤1.0 µA at VR = 1.0 V - enables use in ultra-low-power standby regulators
Junction Temperature (Tj) 200°C maximum - allows high-reliability operation in sealed industrial enclosures
Package Type MHD (glass-passivated DO-35 equivalent) - compatible with standard 5 mm-pitch auto-insertion tooling

Pinout & Package

Package: MHD - miniature hermetically sealed glass package with axial leads, 2.0 mm diameter × 26.0 mm length, mass 0.084 g, JEITA code GRZZ0002ZC-A.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) Zener reference terminal Connected to regulated output node; polarity marking (lake blue band) identifies cathode for correct orientation
2 (Anode) Reference ground return Connected to circuit common; reverse-biased operation requires anode at lower potential than cathode

Key Features

Feature Design Value
Low zener impedance 1.0 Ω max enables <10 mV regulation error during 10–100 mA load steps
Tight voltage grading B2 grade (±0.2 V tolerance) reduces binning requirements in production calibration
High-temperature capability 200°C junction rating supports operation in engine-control or power-converter proximity
Automated assembly compatibility 5 mm pitch and MHD mechanical dimensions match standard high-speed insertion equipment
Low leakage performance ≤1.0 µA at 1.0 V reverse bias minimizes standby current in battery-backed systems

Applications

Industrial Sensor Biasing Microcontroller Reset Reference

Use Scenario: Providing stable 4.2 V bias to analog front-end amplifiers in temperature/humidity sensors operating from unregulated 5 V rails.

IC Role / Device Role / Timing Role: Zener voltage reference establishing fixed bias point for op-amp input stages and ADC reference dividers.

Use Value: 1.0 Ω dynamic resistance maintains <5 mV output variation across 0–50 mA sensor excitation current swings.

Use Scenario: Generating precise reset threshold for 3.3 V microcontrollers where POR must trigger below 3.0 V but above brown-out level.

IC Role / Device Role / Timing Role: Passive voltage clamp defining reset assertion voltage via resistor-divider network.

Use Value: ±0.2 V tolerance ensures reset occurs between 2.95 V and 3.05 V - eliminating marginal resets in noisy 12 V automotive accessory rails.

Low-Power Analog Supply Rail Overvoltage Protection Clamp

Use Scenario: Regulating 4.2 V supply for RF transceiver LDO inputs in battery-powered IoT nodes with wide input voltage range (3–5.5 V).

IC Role / Device Role / Timing Role: Shunt regulator maintaining constant voltage despite varying input and load conditions.

Use Value: 400 mW rating sustains 95 mA output current while holding regulation within ±1% over −40°C to +85°C ambient.

Use Scenario: Clamping transient spikes on 5 V data lines exposed to ESD or inductive kickback in motor drive interfaces.

IC Role / Device Role / Timing Role: Fast-acting shunt protection device limiting line voltage to 4.4 V peak.

Use Value: 1.0 µA leakage at 1.0 V prevents signal integrity degradation on high-impedance digital buses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4733A (ON Semiconductor) Zener voltage 5.1 V ±5%, 1.0 W rating, 7 Ω rd, DO-41 package Higher power and looser tolerance; suited for higher-current 5 V rail clamping Select when >100 mA regulation current or 5.1 V reference is required; not a direct replacement due to voltage and impedance mismatch
BZX55-C4V3 (Vishay) Zener voltage 4.3 V ±5%, 500 mW rating, 90 Ω rd, DO-35 package Looser voltage tolerance and higher dynamic resistance; lower cost for non-critical references Choose for cost-sensitive consumer applications where ±5% voltage accuracy and >50 mV load regulation are acceptable

Compared with 1N4733A and BZX55-C4V3, the HZS4B2TD-E delivers tighter voltage control (±0.2 V vs. ±5%), lower dynamic impedance (1.0 Ω vs. ≥7 Ω), and optimized thermal performance for industrial-grade reliability - making it preferred for precision analog biasing and reset threshold generation where regulation stability is critical.

Availability

HZS4B2TD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, microcontroller reset reference, and low-power analog supply rail applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HZS4B2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS Series is part of Renesas' legacy discrete portfolio designed specifically for high-stability, low-leakage voltage reference and regulation in industrial power management and signal conditioning circuits.

FAQ

What is the exact zener voltage range for HZS4B2TD-E at 5 mA test current?

The HZS4B2TD-E has a guaranteed zener voltage range of 4.0 V minimum to 4.4 V maximum when tested at IZ = 5 mA and Ta = 25°C. This ±0.2 V tolerance corresponds to the B2 grade designation in the HZS Series datasheet (REJ03G0184-0500 Rev.5.00), confirming tight distribution for precision reference use.

Is HZS4B2TD-E suitable for surface-mount assembly?

No - HZS4B2TD-E uses the axial-lead MHD package (JEITA code GRZZ0002ZC-A), which is through-hole only. Its 26.0 mm body length and 5 mm lead pitch are optimized for high-speed automatic insertion, not reflow soldering. For SMD alternatives, consider Renesas' HZU series or equivalent SOD-123 Zeners.

What is the maximum reverse current specification for HZS4B2TD-E?

The HZS4B2TD-E specifies a maximum reverse current (IR) of 1.0 µA at VR = 1.0 V and Ta = 25°C. This low leakage supports energy-efficient designs such as battery-backed real-time clocks or always-on sensor interfaces where standby current must remain sub-microamp.

Does HZS4B2TD-E have a specified zener voltage temperature coefficient?

Yes - while not explicitly listed per part number, Figure 2 in the HZS Series datasheet shows the temperature coefficient γZ for 4.2 V devices (including HZS4B2 variants) is approximately −3.5 mV/°C. This negative coefficient is typical for zeners in the 3–6 V range and must be accounted for in wide-temperature applications.

Can HZS4B2TD-E replace a 4.3 V Zener like BZX55-C4V3 in existing designs?

Not directly - although both regulate near 4.3 V, the HZS4B2TD-E has tighter tolerance (±0.2 V vs. ±5%), lower dynamic resistance (1.0 Ω vs. ~90 Ω), and different thermal characteristics. Substitution requires verification of load regulation, temperature drift, and PCB footprint compatibility; the MHD package differs mechanically from DO-35.

HZS4B2TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS4B2TD-E FAQ

1.How can I place an order for HZS4B2TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS4B2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS4B2TD-E reliable?

The price and inventory of HZS4B2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4B2TD-E is usually 5 days.

3.What payment methods are accepted for HZS4B2TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4B2TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS4B2TD-E?

HZS4B2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS4B2TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS4B2TD-E?

For technical support, including HZS4B2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4B2TD-E requirements.

6.How does Aetrix verify that HZS4B2TD-E is sourced from the original manufacturer or authorized distributors?

All HZS4B2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4B2TD-E meets industry standards.

7.What is the process for return or replacement of HZS4B2TD-E?

All HZS4B2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4B2TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS4B2TD-E part is unused and in its original packaging.

Return procedure for HZS4B2TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZS4B2TD-E Tags

  • HZS4B2TD-E
  • HZS4B2TD-E PDF
  • HZS4B2TD-E Datasheet
  • HZS4B2TD-E Specifications
  • HZS4B2TD-E Images
  • Renesas
  • Renesas HZS4B2TD-E
  • Buy HZS4B2TD-E
  • HZS4B2TD-E Price
  • HZS4B2TD-E Distributor
  • HZS4B2TD-E Supplier
  • HZS4B2TD-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER