Renesas HZS4B2TD-E
- Part No.:
- HZS4B2TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS4B2TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:

- Shipping:

Inventory:50,000
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Product details
Overview
HZS4B2TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 4.2 V (min 4.0 V, max 4.4 V), 400 mW power dissipation, and dynamic resistance of 1.0 Ω at 5 mA test current. It operates within −55°C to +175°C storage range and is used in industrial control logic supply rails and sensor biasing circuits.
For engineers reviewing the HZS4B2TD-E datasheet, HZS4B2TD-E pinout, HZS4B2TD-E application, or HZS4B2TD-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low dynamic impedance for stable regulation under load transients, DC-tested characteristics, and compatibility with 5 mm-pitch automated insertion equipment.
Technical Context
The HZS4B2TD-E employs a silicon planar junction structure optimized for low leakage and tight zener voltage distribution across grade B2 (±0.2 V). Its 400 mW power rating enables operation up to 100 mA at 4.2 V without thermal derating below 70°C ambient.
Zener voltage temperature coefficient is −3.5 mV/°C (typical) per Figure 2, indicating predictable negative drift over temperature - critical for reference stability in non-compensated analog circuits. Reverse current remains ≤1.0 µA at VR = 1.0 V, supporting low-quiescent-current designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.0 V min / 4.4 V max at IZ = 5 mA - defines regulation window for ±0.2 V tolerance design margin |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous 95 mA operation at 4.2 V before thermal limit |
| Dynamic Resistance (rd) | 1.0 Ω max at IZ = 5 mA - ensures <10 mV output shift per 10 mA load change |
| Reverse Current (IR) | ≤1.0 µA at VR = 1.0 V - enables use in ultra-low-power standby regulators |
| Junction Temperature (Tj) | 200°C maximum - allows high-reliability operation in sealed industrial enclosures |
| Package Type | MHD (glass-passivated DO-35 equivalent) - compatible with standard 5 mm-pitch auto-insertion tooling |
Pinout & Package
Package: MHD - miniature hermetically sealed glass package with axial leads, 2.0 mm diameter × 26.0 mm length, mass 0.084 g, JEITA code GRZZ0002ZC-A.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener reference terminal | Connected to regulated output node; polarity marking (lake blue band) identifies cathode for correct orientation |
| 2 (Anode) | Reference ground return | Connected to circuit common; reverse-biased operation requires anode at lower potential than cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 1.0 Ω max enables <10 mV regulation error during 10–100 mA load steps |
| Tight voltage grading | B2 grade (±0.2 V tolerance) reduces binning requirements in production calibration |
| High-temperature capability | 200°C junction rating supports operation in engine-control or power-converter proximity |
| Automated assembly compatibility | 5 mm pitch and MHD mechanical dimensions match standard high-speed insertion equipment |
| Low leakage performance | ≤1.0 µA at 1.0 V reverse bias minimizes standby current in battery-backed systems |
Applications
| Industrial Sensor Biasing | Microcontroller Reset Reference |
|---|---|
|
Use Scenario: Providing stable 4.2 V bias to analog front-end amplifiers in temperature/humidity sensors operating from unregulated 5 V rails. IC Role / Device Role / Timing Role: Zener voltage reference establishing fixed bias point for op-amp input stages and ADC reference dividers. Use Value: 1.0 Ω dynamic resistance maintains <5 mV output variation across 0–50 mA sensor excitation current swings. |
Use Scenario: Generating precise reset threshold for 3.3 V microcontrollers where POR must trigger below 3.0 V but above brown-out level. IC Role / Device Role / Timing Role: Passive voltage clamp defining reset assertion voltage via resistor-divider network. Use Value: ±0.2 V tolerance ensures reset occurs between 2.95 V and 3.05 V - eliminating marginal resets in noisy 12 V automotive accessory rails. |
| Low-Power Analog Supply Rail | Overvoltage Protection Clamp |
|
Use Scenario: Regulating 4.2 V supply for RF transceiver LDO inputs in battery-powered IoT nodes with wide input voltage range (3–5.5 V). IC Role / Device Role / Timing Role: Shunt regulator maintaining constant voltage despite varying input and load conditions. Use Value: 400 mW rating sustains 95 mA output current while holding regulation within ±1% over −40°C to +85°C ambient. |
Use Scenario: Clamping transient spikes on 5 V data lines exposed to ESD or inductive kickback in motor drive interfaces. IC Role / Device Role / Timing Role: Fast-acting shunt protection device limiting line voltage to 4.4 V peak. Use Value: 1.0 µA leakage at 1.0 V prevents signal integrity degradation on high-impedance digital buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A (ON Semiconductor) | Zener voltage 5.1 V ±5%, 1.0 W rating, 7 Ω rd, DO-41 package | Higher power and looser tolerance; suited for higher-current 5 V rail clamping | Select when >100 mA regulation current or 5.1 V reference is required; not a direct replacement due to voltage and impedance mismatch |
| BZX55-C4V3 (Vishay) | Zener voltage 4.3 V ±5%, 500 mW rating, 90 Ω rd, DO-35 package | Looser voltage tolerance and higher dynamic resistance; lower cost for non-critical references | Choose for cost-sensitive consumer applications where ±5% voltage accuracy and >50 mV load regulation are acceptable |
Compared with 1N4733A and BZX55-C4V3, the HZS4B2TD-E delivers tighter voltage control (±0.2 V vs. ±5%), lower dynamic impedance (1.0 Ω vs. ≥7 Ω), and optimized thermal performance for industrial-grade reliability - making it preferred for precision analog biasing and reset threshold generation where regulation stability is critical.
Availability
HZS4B2TD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, microcontroller reset reference, and low-power analog supply rail applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for HZS4B2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HZS Series is part of Renesas' legacy discrete portfolio designed specifically for high-stability, low-leakage voltage reference and regulation in industrial power management and signal conditioning circuits.
FAQ
What is the exact zener voltage range for HZS4B2TD-E at 5 mA test current?
The HZS4B2TD-E has a guaranteed zener voltage range of 4.0 V minimum to 4.4 V maximum when tested at IZ = 5 mA and Ta = 25°C. This ±0.2 V tolerance corresponds to the B2 grade designation in the HZS Series datasheet (REJ03G0184-0500 Rev.5.00), confirming tight distribution for precision reference use.
Is HZS4B2TD-E suitable for surface-mount assembly?
No - HZS4B2TD-E uses the axial-lead MHD package (JEITA code GRZZ0002ZC-A), which is through-hole only. Its 26.0 mm body length and 5 mm lead pitch are optimized for high-speed automatic insertion, not reflow soldering. For SMD alternatives, consider Renesas' HZU series or equivalent SOD-123 Zeners.
What is the maximum reverse current specification for HZS4B2TD-E?
The HZS4B2TD-E specifies a maximum reverse current (IR) of 1.0 µA at VR = 1.0 V and Ta = 25°C. This low leakage supports energy-efficient designs such as battery-backed real-time clocks or always-on sensor interfaces where standby current must remain sub-microamp.
Does HZS4B2TD-E have a specified zener voltage temperature coefficient?
Yes - while not explicitly listed per part number, Figure 2 in the HZS Series datasheet shows the temperature coefficient γZ for 4.2 V devices (including HZS4B2 variants) is approximately −3.5 mV/°C. This negative coefficient is typical for zeners in the 3–6 V range and must be accounted for in wide-temperature applications.
Can HZS4B2TD-E replace a 4.3 V Zener like BZX55-C4V3 in existing designs?
Not directly - although both regulate near 4.3 V, the HZS4B2TD-E has tighter tolerance (±0.2 V vs. ±5%), lower dynamic resistance (1.0 Ω vs. ~90 Ω), and different thermal characteristics. Substitution requires verification of load regulation, temperature drift, and PCB footprint compatibility; the MHD package differs mechanically from DO-35.
HZS4B2TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS4B2TD-E FAQ
1.How can I place an order for HZS4B2TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS4B2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS4B2TD-E reliable?
The price and inventory of HZS4B2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4B2TD-E is usually 5 days.
3.What payment methods are accepted for HZS4B2TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4B2TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS4B2TD-E?
HZS4B2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS4B2TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS4B2TD-E?
For technical support, including HZS4B2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4B2TD-E requirements.
6.How does Aetrix verify that HZS4B2TD-E is sourced from the original manufacturer or authorized distributors?
All HZS4B2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4B2TD-E meets industry standards.
7.What is the process for return or replacement of HZS4B2TD-E?
All HZS4B2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4B2TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS4B2TD-E part is unused and in its original packaging.
Return procedure for HZS4B2TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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