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Renesas HZS4B3TD-E
- Part No.:
- HZS4B3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS4B3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
HZS4B3TD-E from Renesas Electronics is a silicon planar Zener diode designed for voltage regulation and stabilization in low-power supply circuits, with a nominal zener voltage of 4.2–4.4 V (Grade B3), 400 mW power dissipation, 1.0 Ω typical dynamic resistance at 5 mA, and operation up to 200°C junction temperature - used in precision reference and biasing applications within industrial control modules.
For engineers reviewing the HZS4B3TD-E datasheet, HZS4B3TD-E pinout, HZS4B3TD-E application, or HZS4B3TD-E equivalent, this device serves as a stable, low-leakage voltage reference in space-constrained DC-DC feedback paths, analog sensor conditioning stages, and microcontroller reset circuitry where tight tolerance and thermal stability are required.
Technical Context
This Zener diode operates in reverse breakdown mode with DC-tested characteristics, optimized for stabilized power supply functions requiring low zener impedance and minimal temperature drift. Its planar construction ensures consistent parametric performance across production lots and reliable long-term stability under continuous DC bias.
The device exhibits a zener voltage temperature coefficient near zero (±0.02 %/°C typical in the 4–5 V range), enabling stable reference generation without external compensation. It supports high-speed automatic insertion via 5 mm pitch compatibility and is rated for storage from −55°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.2–4.4 V at IZ = 5 mA - defines precise regulation point for feedback or reference use. |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating. |
| Dynamic Resistance (rd) | 1.0 Ω max at IZ = 5 mA - ensures minimal output voltage variation under load current changes. |
| Reverse Leakage (IR) | 5 µA max at VR = 0.5 V - guarantees low standby current in always-on reference circuits. |
| Junction Temperature (Tj) | 200°C - enables operation in high-ambient industrial environments without derating. |
| Package Type | MHD (Mini-High-Density) - surface-mount compatible leadframe package with 2.0 mm diameter body and 26 mm lead length. |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), epoxy-molded, axial-lead miniature package with cathode band marking; dimensions: φD = 2.0 mm (nom), L = 26.0 mm (min), mass ≈ 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference node | Connected to regulated output or feedback point; polarity must be observed to maintain reverse-bias operation. |
| 2 (Anode) | Reference ground return path | Completes current loop during regulation; tied to system ground or lower-potential rail in shunt configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 1.0 Ω max enables tight regulation under varying load conditions in feedback networks. |
| Wide zener voltage range coverage | 4.2–4.4 V Grade B3 variant supports precise matching to common 3.3 V/5 V system rails. |
| High thermal endurance | 200°C max junction temperature allows use in enclosed or high-temperature industrial enclosures. |
| Automated assembly compatibility | 5 mm pitch design supports high-throughput placement in automated PCB assembly lines. |
Applications
| Microcontroller Reset Circuit | ADC Reference Stabilization |
|---|---|
|
Use Scenario: Provides stable threshold voltage for RC-based reset generators in embedded microcontrollers. IC Role / Device Role / Timing Role: Shunt voltage reference defining logic-high reset release level. Use Value: Ensures deterministic reset timing across temperature (−55°C to +125°C ambient) due to low tempco and 400 mW power margin. |
Use Scenario: Supplies clean, low-noise reference voltage to 12-bit analog-to-digital converters. IC Role / Device Role / Timing Role: Low-impedance DC reference source replacing higher-cost IC references. Use Value: 1.0 Ω dynamic resistance minimizes code-width variation caused by supply ripple or load transients. |
| DC-DC Converter Feedback | Sensor Biasing Network |
|
Use Scenario: Sets output voltage in isolated flyback or buck converter secondary-side feedback loops. IC Role / Device Role / Timing Role: Precision shunt element in optocoupler-coupled error amplifier path. Use Value: Tight 4.2–4.4 V tolerance reduces need for post-production trimming; 400 mW rating accommodates transient overloads. |
Use Scenario: Establishes fixed bias point for bridge-type pressure or temperature sensors. IC Role / Device Role / Timing Role: Stable excitation voltage source independent of main supply fluctuations. Use Value: Low leakage (<5 µA) prevents loading errors in high-impedance Wheatstone bridge arms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A (ON Semiconductor) | 5.1 V nominal, 1.0 W power rating, DO-41 package, 17 Ω rd | Higher power and voltage; less suitable for 4.3 V precision feedback | Select only if 5.1 V regulation and higher dissipation are required; not a direct replacement. |
| BZX55-C4V3 (Vishay) | 4.3 V nominal, 500 mW, DO-35 package, 90 Ω rd at 5 mA | Higher dynamic resistance limits accuracy in precision references | Acceptable for general-purpose clamping but inferior regulation stability vs. HZS4B3TD-E. |
Compared with 1N4733A and BZX55-C4V3, the HZS4B3TD-E delivers superior regulation accuracy (1.0 Ω rd vs. ≥17 Ω), tighter voltage tolerance (±0.1 V vs. ±5%), and optimized thermal robustness (200°C Tj) - making it preferred for industrial-grade feedback and reference designs demanding long-term stability.
Availability
HZS4B3TD-E is available at Aetrix Electronics and suitable for industrial control systems, sensor signal conditioning modules, and embedded power management circuits requiring stable component supply with full traceability and lifecycle continuity.
Supply support for HZS4B3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series belongs to Renesas' discrete Zener diode product line, engineered specifically for high-stability voltage reference and shunt regulation in cost-sensitive, thermally demanding industrial power supplies.
FAQ
What is the exact zener voltage range specified for HZS4B3TD-E?
The HZS4B3TD-E has a guaranteed zener voltage range of 4.2 V to 4.4 V when tested at IZ = 5 mA and Ta = 25°C. This Grade B3 tolerance (±0.1 V) ensures predictable regulation behavior in feedback and reference applications without calibration. The value is confirmed in Renesas document REJ03G0184-0500 Rev.5.00, Page 2.
Does HZS4B3TD-E support surface-mount assembly?
No - HZS4B3TD-E uses the MHD axial-lead package (JEITA code GRZZ0002ZC-A) with 26 mm leads intended for through-hole mounting or manual/automated axial insertion. It is not a surface-mount device; its 5 mm pitch compatibility applies to high-speed automatic through-hole placement, not reflow soldering.
What is the maximum allowable reverse current before breakdown for HZS4B3TD-E?
The HZS4B3TD-E specifies a maximum reverse leakage current (IR) of 5 µA at VR = 0.5 V and Ta = 25°C. This low leakage ensures minimal parasitic loading in high-impedance reference nodes. The parameter is measured per Renesas REJ03G0184-0500, Page 2, under "Electrical Characteristics".
Can HZS4B3TD-E be used in automotive applications?
HZS4B3TD-E is classified as a "Standard" quality grade device per Renesas documentation and is intended for computers, office equipment, industrial robots, and test equipment - not automotive or safety-critical systems. For automotive use, Renesas requires explicit written consent and qualification per their quality grading policy (REJ03G0184-0500, Page 1).
What is the thermal resistance junction-to-ambient for HZS4B3TD-E?
The datasheet does not specify a numerical junction-to-ambient thermal resistance (RθJA) for HZS4B3TD-E. Instead, Renesas provides the derating curve in Figure 3 (Page 5): power dissipation linearly decreases from 400 mW at 25°C ambient to 0 mW at ~150°C ambient. Designers must apply this curve directly for thermal design rather than using RθJA.
HZS4B3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS4B3TD-E FAQ
1.How can I place an order for HZS4B3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS4B3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS4B3TD-E reliable?
The price and inventory of HZS4B3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4B3TD-E is usually 5 days.
3.What payment methods are accepted for HZS4B3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4B3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS4B3TD-E?
HZS4B3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS4B3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS4B3TD-E?
For technical support, including HZS4B3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4B3TD-E requirements.
6.How does Aetrix verify that HZS4B3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS4B3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4B3TD-E meets industry standards.
7.What is the process for return or replacement of HZS4B3TD-E?
All HZS4B3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4B3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS4B3TD-E part is unused and in its original packaging.
Return procedure for HZS4B3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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