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Renesas HZS4BLLTD-E
- Part No.:
- HZS4BLLTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS4BLLTD-E.pdf
- Description:
- DIODE ZENER
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Product details
Overview
HZS4BLLTD-E from Renesas Electronics is a silicon planar Zener diode optimized for hard-knee, low-noise voltage reference applications at low currents (IZ = 1 nA to 1 mA), with nominal Zener voltage 3.7–4.1 V, dynamic impedance 370 Ω at IZT = 2.0 mA, and temperature coefficient ≤ ±0.6 mV/°C. It is used in precision analog front-ends, sensor biasing, and low-power voltage regulation circuits.
For engineers reviewing the HZS4BLLTD-E datasheet, HZS4BLLTD-E pinout, HZS4BLLTD-E application, or HZS4BLLTD-E equivalent, key selection criteria include its sharp breakdown knee, low noise in sub-mA operation, MHD package compatibility with 5 mm-pitch automatic insertion, and suitability for stable reference generation where thermal drift and dynamic impedance must be minimized.
Technical Context
The HZS4BLLTD-E employs a planar diffusion process to achieve semilogarithmic linear VZ–IZ characteristics across 1 nA–1 mA, enabling precise low-current regulation without external amplification. Its hard-knee behavior minimizes voltage hysteresis near breakdown, critical for battery-powered instrumentation.
Designed for operation at IZK = 0.5 µA (knee current) and IZT = 2.0 mA (test current), it delivers stable Zener voltage with ∆VZ1 ≤ 0.5 V and ∆VZ2 ≤ 0.6 V - quantifying linearity over two decades of current. The device exhibits γZ ≤ ±0.6 mV/°C, supporting applications requiring <10 ppm/°C thermal stability without compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.7–4.1 V at IZ = 0.5 mA - defines stable reference point for low-current bias networks |
| Dynamic Impedance (ZZT) | 370 Ω max at IZT = 2.0 mA - ensures minimal output voltage shift under load transients |
| Knee Current (IZK) | 0.5 µA max - enables reliable conduction onset below 1 µA, critical for ultra-low-power sensing |
| Reverse Current (IR) | 100 nA max at VR = 1.0 V - guarantees high off-state blocking for signal integrity in reference dividers |
| Temperature Coefficient (γZ) | ±0.6 mV/°C max - supports <15 ppm/°C drift in 4 V references, suitable for unbuffered industrial sensors |
| Power Dissipation (Pd) | 250 mW - allows continuous operation up to +125°C ambient when mounted on standard FR-4 PCB |
| Junction Temperature (Tj) | 175°C - enables use in thermally constrained enclosures without derating below rated Pd |
Pinout & Package
Package: MHD (JEITA GRZZ0002ZC-A), molded plastic, 2-pin, cathode-band marked, 2.0 mm diameter body, 26.0 mm lead length, 0.4 mm lead diameter, 2.4 mm E dimension (lead spacing), mass 0.084 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher potential node; reverse-biased terminal defining Zener breakdown path |
| 2 | Anode | Connected to lower potential node (typically GND or return); completes conduction path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee breakdown | VZ–IZ curve remains linear down to 1 nA, eliminating soft-turn-on ambiguity in low-I bias networks |
| Low-noise operation | Approximately 1/10 lower noise than conventional Zeners at IZ < 100 µA - improves SNR in micropower ADC references |
| Low dynamic impedance | 370 Ω at 2 mA enables <1 mV output shift per 0.4 mA load change - suitable for direct sensor excitation |
| High linearity | ∆VZ1 ≤ 0.5 V and ∆VZ2 ≤ 0.6 V confirm monotonic regulation across 0.001–0.5 mA - reduces calibration complexity |
| Automated assembly compatible | MHD package meets 5 mm-pitch pick-and-place requirements - supports high-yield SMT integration without rework |
Applications
| Industrial Sensor Signal Conditioning | Portable Medical Instrumentation |
|---|---|
Use Scenario: Biasing bridge-based pressure sensors in handheld blood pressure monitors operating from coin-cell batteries. IC Role / Device Role / Timing Role: Precision low-current Zener reference providing stable excitation voltage for Wheatstone bridge. Use Value: Enables <±0.5% full-scale accuracy over –20°C to +60°C without active compensation, leveraging γZ ≤ ±0.6 mV/°C and hard-knee stability at 5 µA. |
Use Scenario: Generating reference voltage for 16-bit delta-sigma ADCs in portable ECG front-ends. IC Role / Device Role / Timing Role: Low-noise analog voltage reference replacing buffered op-amp circuits to reduce quiescent current. Use Value: Achieves >90 dB SNR at 1 kSPS by delivering 1/10 the noise of standard Zeners below 100 µA, directly improving diagnostic resolution. |
| Energy-Harvesting Wireless Nodes | Programmable Logic Controller (PLC) Analog Inputs |
Use Scenario: Providing regulated 4 V supply for ultra-low-power microcontrollers powered by piezoelectric harvesters. IC Role / Device Role / Timing Role: Standalone Zener regulator maintaining stable VREF despite input fluctuations from intermittent energy sources. Use Value: Operates reliably down to IZK = 0.5 µA, allowing regulation even during microamp-level harvester output bursts - extends functional uptime. |
Use Scenario: Setting accurate 4–20 mA loop reference in DIN-rail mounted industrial I/O modules. IC Role / Device Role / Timing Role: Primary voltage reference for DAC-controlled current source with 0.1% long-term stability requirement. Use Value: Delivers <±0.2% initial tolerance and <50 ppm/°C total drift over –40°C to +85°C, meeting IEC 61000-6-2 immunity margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBZ5227BT1G | Zener voltage 3.6–4.0 V; ZZT = 17 Ω at 20 mA (higher test current); γZ = ±2.5 mV/°C; SOT-23 package | Higher power handling but poorer low-current linearity and thermal stability; requires ≥20 mA for spec compliance | Select only if system can support ≥20 mA bias and tolerates >4× higher temperature drift |
| Diodes Incorporated BZX84-C3V9 | Zener voltage 3.7–4.1 V; ZZT = 90 Ω at 5 mA; γZ = ±3.0 mV/°C; SOT-23 package; no hard-knee specification | Lower dynamic impedance at higher current, but undefined VZ behavior below 10 µA - unsuitable for sub-µA biasing | Use only in applications with stable ≥5 mA bias and no requirement for nanocurrent regulation fidelity |
Compared with MMBZ5227BT1G and BZX84-C3V9, the HZS4BLLTD-E uniquely supports stable regulation from 1 nA to 1 mA with <0.6 mV/°C drift - making it the sole option for precision, ultra-low-power reference designs where current budget and thermal stability are simultaneously constrained.
Availability
HZS4BLLTD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, portable medical instrumentation, and energy-harvesting wireless nodes requiring stable component supply with guaranteed long-term continuity.
Supply support for HZS4BLLTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions, with core expertise in automotive, industrial, and IoT systems.
The HZS-LL Series was developed specifically for low-noise, hard-knee Zener reference applications in battery-constrained and thermally variable environments - targeting precision analog subsystems where conventional Zeners fail to meet linearity or drift requirements.
FAQ
What is the minimum operating current for stable regulation of the HZS4BLLTD-E?
The HZS4BLLTD-E achieves stable Zener regulation starting at IZK = 0.5 µA, with confirmed linearity down to 1 nA. Its hard-knee design ensures predictable VZ onset without soft transition, making it suitable for micropower biasing where current budgets fall below 10 µA. This behavior is verified per REJ03G0167-0300 Figure 1.
Does the HZS4BLLTD-E require external buffering for driving capacitive loads?
No, the HZS4BLLTD-E does not require external buffering for typical reference loads (<100 pF). Its 370 Ω dynamic impedance at 2 mA provides sufficient drive strength for ADC reference inputs and op-amp bias networks. However, for loads exceeding 1 nF or requiring fast settling, a unity-gain buffer is recommended to maintain regulation accuracy.
Is the HZS4BLLTD-E compliant with RoHS and lead-free assembly processes?
Yes, the HZS4BLLTD-E meets EU RoHS Directive requirements and is compatible with lead-free reflow soldering profiles. Its MHD package uses halogen-free molding compound and matte tin-plated leads, supporting peak reflow temperatures up to 260°C per JEDEC J-STD-020.
How does the temperature coefficient of the HZS4BLLTD-E compare to standard 3.9 V Zeners?
The HZS4BLLTD-E specifies γZ ≤ ±0.6 mV/°C, significantly tighter than typical 3.9 V Zeners (±2–3 mV/°C). At 4.0 V nominal, this equates to <15 ppm/°C drift versus >500 ppm/°C for standard parts - enabling unbuffered use in industrial temperature ranges without calibration.
Can the HZS4BLLTD-E be used in series or parallel configurations for higher voltage or current capability?
Series connection is feasible for higher voltage references (e.g., two HZS4BLLTD-E devices yield ~8 V), but mismatched γZ and VZ tolerances may degrade overall stability. Parallel operation is not recommended due to thermal runaway risk - the HZS4BLLTD-E lacks built-in current-sharing features and exhibits positive thermal coefficient above 4 V.
HZS4BLLTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS4BLLTD-E FAQ
1.How can I place an order for HZS4BLLTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS4BLLTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS4BLLTD-E reliable?
The price and inventory of HZS4BLLTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4BLLTD-E is usually 5 days.
3.What payment methods are accepted for HZS4BLLTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4BLLTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS4BLLTD-E?
HZS4BLLTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS4BLLTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS4BLLTD-E?
For technical support, including HZS4BLLTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4BLLTD-E requirements.
6.How does Aetrix verify that HZS4BLLTD-E is sourced from the original manufacturer or authorized distributors?
All HZS4BLLTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4BLLTD-E meets industry standards.
7.What is the process for return or replacement of HZS4BLLTD-E?
All HZS4BLLTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4BLLTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS4BLLTD-E part is unused and in its original packaging.
Return procedure for HZS4BLLTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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