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Renesas HZS4C1TD-E
- Part No.:
- HZS4C1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS4C1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:12,500
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Product details
Overview
HZS4C1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 4.2–4.4 V, 400 mW power dissipation, and low dynamic resistance of 1.0 Ω at 5 mA test current. It operates within −55°C to +175°C storage range and is qualified for industrial-grade applications including office equipment and test instrumentation.
For engineers reviewing the HZS4C1TD-E datasheet, HZS4C1TD-E pinout, HZS4C1TD-E application, or HZS4C1TD-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low leakage (<5 µA at 0.5 V), thermal stability (γZ ≈ −0.02 %/°C near 4.3 V), and compatibility with 5 mm-pitch high-speed automatic insertion on PCBs.
Technical Context
The HZS4C1TD-E implements a planar-diffused junction structure optimized for stable reverse-breakdown behavior under DC bias. Its zener voltage is specified at IZ = 5 mA with tight grade-C tolerance (±0.2 V), and it exhibits low dynamic impedance (1.0 Ω) ensuring minimal output voltage variation under load transients.
Thermal performance is characterized by a maximum junction temperature of 200°C and a negative temperature coefficient near 4.3 V (−0.02 %/°C), enabling predictable drift compensation in ambient-varying environments. The device is rated for standard industrial quality grade per Renesas classification, excluding life-support or aerospace use without written consent.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.2–4.4 V at IZ = 5 mA - defines precise regulation point for 3.3 V or 5 V rail clamping and reference generation. |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in compact SMD-compatible through-hole packages without forced cooling. |
| Dynamic Resistance (rd) | 1.0 Ω max at IZ = 5 mA - ensures <10 mV output shift per 10 mA load change, critical for stable analog references. |
| Reverse Leakage (IR) | ≤5 µA at VR = 0.5 V - minimizes quiescent current loss in battery-backed or low-power monitoring circuits. |
| Junction Temperature (Tj) | 200°C max - enables reliable operation in high-temperature industrial enclosures or near power components. |
| Storage Temperature | −55°C to +175°C - compatible with reflow, wave, and hand-soldering processes and long-term shelf storage. |
Pinout & Package
Package: MHD (JEITA code GRZZ0002ZC-A), axial-leaded, 2.0 mm diameter × 26.0 mm length, paper-phenol body, cathode band marked in lake blue. Mass: 0.084 g (typ).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to regulated positive rail; reverse-biased during normal operation to clamp voltage. |
| 2 (Anode) | Reference ground node | Typically tied to circuit common; establishes reference potential for voltage stabilization. |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 1.0 Ω at 5 mA enables tight regulation under dynamic load steps in feedback loops and sensor references. |
| Wide zener voltage spectrum | Part of HZS Series covering 1.6–38 V - allows direct substitution across multiple supply rails without redesign. |
| High-speed insertion compatibility | 5 mm pitch and standardized MHD dimensions support automated placement in high-volume manufacturing. |
| Industrial temperature range | −55°C to +175°C storage and 200°C junction rating suit harsh environments like factory automation and test gear. |
Applications
| Voltage Reference for ADC/DAC | Overvoltage Clamp in Power Supply |
|---|---|
Use Scenario: Providing stable 4.3 V reference to 12-bit SAR ADC in portable data logger. IC Role / Device Role / Timing Role: Zener diode serves as precision shunt reference, replacing higher-cost bandgap ICs where ±1% accuracy suffices. Use Value: Delivers 4.3 V ±0.2 V with <1.0 Ω output impedance, reducing reference noise contribution by >20 dB vs. generic Zeners. |
Use Scenario: Clamping 5 V rail against transient spikes in microcontroller-based motor controller. IC Role / Device Role / Timing Role: Shunt protection element absorbing surge energy before downstream LDO or MCU input. Use Value: Withstands 400 mW peak dissipation and responds within nanoseconds to limit voltage to ≤4.4 V, preventing latch-up. |
| Signal Level Translation | Current Source Biasing |
Use Scenario: Level-shifting 3.3 V logic to interface with 5 V legacy peripherals using resistor-Zener network. IC Role / Device Role / Timing Role: Defines upper voltage threshold in passive translator; sets logic-high level independent of load. Use Value: Tight 4.2–4.4 V tolerance ensures consistent 5 V logic recognition margin (>0.6 V) across temperature and unit variance. |
Use Scenario: Biasing constant-current source for LED indicator in industrial HMI panel. IC Role / Device Role / Timing Role: Sets reference voltage for op-amp-controlled current mirror feeding 20 mA LED string. Use Value: Low 1.0 Ω rd maintains current stability within ±2% over 10–100 mA load range, eliminating need for trimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A (ON Semiconductor) | Zener voltage 5.1 V ±5%, Pd = 1 W, rd = 7 Ω - higher voltage, higher power, higher impedance. | Not suitable for 4.3 V regulation; requires layout change and resistor recalculations. | Select only if 5.1 V reference or >400 mW headroom is required; verify thermal derating above 70°C ambient. |
| BZX55-C4V3 (Vishay) | Zener voltage 4.3 V ±5%, Pd = 500 mW, rd = 90 Ω - same nominal voltage but looser tolerance and higher impedance. | Adequate for non-critical clamping but insufficient for precision reference use due to 90 Ω rd. | Acceptable for cost-sensitive overvoltage protection; avoid in ADC reference paths where <2 Ω impedance is mandatory. |
Compared with 1N4733A and BZX55-C4V3, the HZS4C1TD-E offers tighter voltage tolerance (±0.2 V vs. ±5%), lower dynamic resistance (1.0 Ω vs. 7–90 Ω), and industrial-grade thermal robustness - making it optimal for precision regulation where stability and low noise outweigh raw power handling.
Availability
HZS4C1TD-E is available at Aetrix Electronics and suitable for stabilized power supply design, analog reference circuits, and overvoltage protection requiring stable component supply across industrial OEM production cycles.
Supply support for HZS4C1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series was developed as a family of precision silicon planar Zener diodes targeting cost-effective, high-stability voltage regulation in industrial power management and signal conditioning applications.
FAQ
What is the exact zener voltage range for HZS4C1TD-E?
The HZS4C1TD-E has a guaranteed zener voltage range of 4.2 V to 4.4 V when tested at IZ = 5 mA and Ta = 25°C. This corresponds to Grade C specification within the HZS4 family, offering ±0.2 V tolerance - significantly tighter than standard 5% Zeners. The value remains stable across its operating temperature range due to its planar junction design and documented temperature coefficient near −0.02 %/°C.
Is HZS4C1TD-E suitable for surface-mount assembly?
No, the HZS4C1TD-E uses the MHD axial-leaded package (JEITA GRZZ0002ZC-A) with 2.0 mm diameter and 26.0 mm length, designed explicitly for through-hole mounting and 5 mm-pitch high-speed automatic insertion. It is not a surface-mount device. For SMT equivalents, Renesas offers other series such as the UDZS or NZ9F families - but HZS4C1TD-E itself requires wave soldering or manual through-hole placement.
What is the maximum reverse leakage current for HZS4C1TD-E?
The maximum reverse leakage current (IR) for HZS4C1TD-E is 5 µA when measured at VR = 0.5 V and Ta = 25°C. This low leakage supports energy-efficient designs, especially in battery-powered or always-on monitoring circuits where standby current must remain below 10 µA. The value is confirmed in the official Renesas Electrical Characteristics table on page 2 of REJ03G0184-0500 Rev.5.00.
Does HZS4C1TD-E have automotive qualification?
No, the HZS4C1TD-E is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, communications gear, and industrial robots - not for automotive or safety-critical systems. It lacks AEC-Q200 stress testing or PPAP documentation. For automotive-grade Zeners, Renesas offers the "HQ" (High Quality) series such as HQZSxx variants, which undergo extended temperature cycling and vibration validation.
How does the dynamic resistance of HZS4C1TD-E affect voltage regulation accuracy?
The dynamic resistance (rd) of HZS4C1TD-E is specified at ≤1.0 Ω at IZ = 5 mA. This low value means that a 10 mA change in zener current causes less than 10 mV shift in output voltage - directly improving regulation accuracy in variable-load applications like sensor biasing or reference buffering. In contrast, typical 5% Zeners exhibit rd >50 Ω, resulting in >500 mV drift under identical conditions. This makes HZS4C1TD-E particularly valuable in precision analog stages where HZS4C1TD-E's low rd reduces system-level calibration burden.
HZS4C1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS4C1TD-E FAQ
1.How can I place an order for HZS4C1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS4C1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS4C1TD-E reliable?
The price and inventory of HZS4C1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS4C1TD-E is usually 5 days.
3.What payment methods are accepted for HZS4C1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS4C1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS4C1TD-E?
HZS4C1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS4C1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS4C1TD-E?
For technical support, including HZS4C1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS4C1TD-E requirements.
6.How does Aetrix verify that HZS4C1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS4C1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS4C1TD-E meets industry standards.
7.What is the process for return or replacement of HZS4C1TD-E?
All HZS4C1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS4C1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS4C1TD-E part is unused and in its original packaging.
Return procedure for HZS4C1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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