Renesas HZS4C3JRX-E

Overview

HZS4C3JRX-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 4.2–4.4 V, maximum power dissipation of 400 mW, dynamic resistance ≤100 Ω at 5 mA, and reverse leakage current ≤1.0 µA at 0.5 V. It supports high-speed automatic insertion on 5 mm-pitch PCBs in industrial power management circuits.

For engineers reviewing the HZS4C3JRX-E datasheet, HZS4C3JRX-E pinout, HZS4C3JRX-E application, or HZS4C3JRX-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low dynamic impedance for load regulation stability, thermal robustness up to 200°C junction temperature, and compatibility with automated assembly processes requiring axial-leaded TO-236AB (SOD-323) packaging.

Technical Context

This discrete Zener diode operates in reverse breakdown mode to maintain stable reference voltage under varying load and line conditions. Its epitaxial planar construction ensures tight V_Z distribution and low temperature coefficient-typically ±0.02%/°C near 4.3 V-enabling reliable performance across automotive and industrial ambient ranges.

Rated for DC testing only, HZS4C3JRX-E delivers consistent regulation at I_Z = 5 mA with V_Z = 4.2–4.4 V and r_d ≤ 100 Ω, while maintaining T_j ≤ 200°C and storage capability from –55°C to +175°C-critical for embedded power rail supervision and feedback loop stabilization.

Key Specifications

Pinout & Package

Package: TO-236AB (SOD-323), plastic molded, axial-leaded surface-mount package with cathode band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with MMSZ4V3T1G and BZX84-C4V3, HZS4C3JRX-E offers superior power handling (400 mW vs. ≤350 mW), tighter V_Z spread (±0.1 V vs. ±5%), and lower leakage-making it optimal for high-reliability industrial and automotive voltage reference nodes where thermal margin and accuracy are critical.

Availability

HZS4C3JRX-E is available at Aetrix Electronics and suitable for industrial power supply monitoring, automotive ECU reference circuits, and consumer SMPS feedback applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HZS4C3JRX-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions, with global manufacturing and quality certifications including IATF 16949 and ISO 14001.

HZS4C3JRX-E belongs to ROHM's HZS Series of silicon epitaxial planar Zener diodes, engineered specifically for high-accuracy, high-stability voltage reference and regulation in automotive, industrial, and consumer power systems.

FAQ

What is the exact zener voltage range for HZS4C3JRX-E?

HZS4C3JRX-E has a guaranteed zener voltage range of 4.2 V to 4.4 V at test current I_Z = 5 mA and ambient temperature 25°C. This ±0.1 V tolerance reflects the "C3" grade designation in the HZS Series nomenclature and is tighter than standard ±5% Zeners, enabling high-precision feedback in regulated power supplies where HZS4C3JRX-E is deployed.

Is HZS4C3JRX-E suitable for automotive applications?

Yes, HZS4C3JRX-E is qualified for automotive use with a junction temperature rating up to 200°C and storage temperature range of –55°C to +175°C. Its low temperature coefficient (~±0.02%/°C at 4.3 V) and stable dynamic resistance support reliable operation in engine control units and ADAS power domains where HZS4C3JRX-E serves as a reference element.

What package type does HZS4C3JRX-E use?

HZS4C3JRX-E uses the TO-236AB (SOD-323) surface-mount package: a 2-pin, plastic-molded case measuring 1.3 mm × 1.7 mm × 0.9 mm with cathode band marking. This compact outline supports high-density PCB layouts and is compatible with standard reflow soldering profiles used for HZS4C3JRX-E in industrial and automotive assemblies.

How does the dynamic resistance of HZS4C3JRX-E affect regulation performance?

HZS4C3JRX-E specifies dynamic resistance ≤100 Ω at I_Z = 5 mA, meaning output voltage variation remains under 100 mV per 1 mA change in zener current. This low r_d directly improves load regulation in feedback networks-especially critical in HZS4C3JRX-E applications like SMPS voltage sensing where ripple rejection and stability depend on reference rigidity.

Can HZS4C3JRX-E replace older Zener diodes like 1N4733A in new designs?

HZS4C3JRX-E is not a drop-in replacement for 1N4733A (5.1 V, 1 W, DO-41) due to different voltage rating, power level, and package. However, for 4.3 V reference needs in space-constrained SMT designs, HZS4C3JRX-E provides superior accuracy, lower leakage, and modern packaging-making it a purpose-fit upgrade where the system architecture accommodates its 400 mW rating and SOD-323 footprint instead of through-hole 1N4733A.