Renesas HZS5.1NB1TA-E

Overview

HZS5.1NB1TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 5.1 V (min 4.85 V, max 5.03 V at I_Z = 5 mA), with dynamic resistance of 1.5 Ω, maximum power dissipation of 400 mW, and reverse leakage current ≤5 μA at V_R = 1.5 V - enabling stable reference generation in sensor biasing and IC supply rail clamping circuits.

For engineers reviewing the HZS5.1NB1TA-E datasheet, HZS5.1NB1TA-E pinout, HZS5.1NB1TA-E application, or HZS5.1NB1TA-E equivalent, key selection criteria include its B1-grade zener voltage tolerance (±2.2%), low impedance at 5 mA test current, MHD package compatibility with 5 mm-pitch automated insertion, and suitability for industrial-grade power conditioning where thermal stability up to 200°C junction temperature is required.

Technical Context

This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its zener voltage exhibits a positive temperature coefficient near 5.1 V (≈+2.0 mV/°C per Fig.2), minimizing drift across –55°C to +175°C storage range. The MHD package provides mechanical robustness and thermal path optimization for PCB-mounted regulation.

Electrical behavior is defined under pulsed test conditions (PW = 40 ms) to limit self-heating, ensuring specified V_Z, r_d, and I_R values remain valid at T_a = 25°C. Power derating follows a linear curve down to zero dissipation at 150°C ambient (Fig.3), requiring layout-aware thermal design in enclosed environments.

Key Specifications

Pinout & Package

MHD package: axial-leaded, cylindrical glass-body diode with cathode band marking; leads spaced 5 mm for standard pick-and-place feeders; mass ≈0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4733A and BZX55-C5V1, HZS5.1NB1TA-E offers tighter voltage tolerance and lower dynamic resistance in an MHD package optimized for automated insertion - making it preferable for industrial-grade precision regulation where long-term stability and assembly efficiency are prioritized over raw power handling.

Availability

HZS5.1NB1TA-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller I/O protection, and programmable logic controller power monitoring requiring stable component supply and consistent B1-grade voltage performance.

Supply support for HZS5.1NB1TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS-N Series was developed as a family of precision silicon planar Zener diodes targeting cost-sensitive yet thermally demanding industrial power regulation applications - emphasizing low leakage, repeatable breakdown characteristics, and compatibility with high-volume automated assembly.

FAQ

What is the zener voltage tolerance of HZS5.1NB1TA-E?

HZS5.1NB1TA-E has a B1-grade zener voltage specification of 4.85 V to 5.03 V at I_Z = 5 mA, corresponding to ±2.2% tolerance around the nominal 5.1 V rating. This tighter tolerance than standard Zeners (e.g., ±5%) reduces need for external trimming in precision reference designs and is confirmed in the REJ03G0185-0300 datasheet Table on Page 2.

Does HZS5.1NB1TA-E support high-temperature operation?

Yes, HZS5.1NB1TA-E is rated for junction temperatures up to 200°C and storage temperatures from –55°C to +175°C. Its MHD package and planar construction enable reliable operation in industrial motor drives and under-hood automotive modules, provided power dissipation is derated per Figure 3 in the REJ03G0185-0300 datasheet.

What is the dynamic resistance of HZS5.1NB1TA-E and why does it matter?

HZS5.1NB1TA-E has a maximum dynamic resistance of 1.5 Ω at I_Z = 5 mA. This low value ensures minimal output voltage variation under changing load currents - critical for maintaining accuracy in sensor excitation and feedback networks where even 1 mA load shift would cause only ~1.5 mV drop, unlike higher-r_d alternatives.

Can HZS5.1NB1TA-E be used in place of older NEC Zener diodes?

Yes, HZS5.1NB1TA-E is a direct successor to NEC's pre-merger HZS5.1N series, retaining identical electrical specs, MHD package dimensions, and pinout. The "TA-E" suffix denotes Renesas' post-2010 standardized packaging and traceability coding, fully backward compatible with legacy NEC designs documented in REJ03G0185-0300.

Is HZS5.1NB1TA-E RoHS compliant?

HZS5.1NB1TA-E complies with the EU RoHS Directive, as confirmed by Renesas' environmental compliance documentation. The MHD package contains no lead in solderable terminations, and all materials meet restricted substance thresholds - verified through Renesas' material declarations and third-party testing reports available upon request.