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Renesas HZS5.6NB1TD-P-E
- Part No.:
- HZS5.6NB1TD-P-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS5.6NB1TD-P-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:6,250
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Product details
Overview
HZS5.6NB1TD-P-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power DC supply rails, with a nominal zener voltage of 5.6 V (min 5.5 V, max 5.8 V), dynamic resistance of 40 Ω at 5 mA, maximum power dissipation of 400 mW, and reverse current ≤1 µA at 2 V, commonly used in reference voltage generation for analog sensor interfaces and microcontroller reset circuits.
For engineers reviewing the HZS5.6NB1TD-P-E datasheet, HZS5.6NB1TD-P-E pinout, HZS5.6NB1TD-P-E application, or HZS5.6NB1TD-P-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low temperature coefficient (~2.0 mV/°C near 5.6 V), stable operation up to +200°C junction temperature, and compatibility with 5 mm-pitch automated insertion equipment.
Technical Context
This Zener diode employs an epitaxial planar structure to achieve low leakage and tightly controlled breakdown characteristics. Its 400 mW power rating and 40 Ω dynamic impedance at 5 mA enable stable regulation under moderate load variations without external buffering.
The device is characterized at 25°C with DC test conditions and exhibits a typical temperature coefficient of +2.0 mV/°C near its 5.6 V operating point, supporting predictable drift compensation in precision analog designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 5.5 V min to 5.8 V max at IZ = 5 mA - ensures ±0.3 V tolerance for tight-reference applications |
| Dynamic Resistance (rd) | 40 Ω max at IZ = 5 mA - maintains low output impedance for stable regulation under load transients |
| Reverse Current (IR) | ≤1 µA max at VR = 2 V - minimizes standby power loss in battery-backed systems |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in compact PCB layouts without forced cooling |
| Junction Temperature (Tj) | −55°C to +200°C - enables use in automotive under-hood and industrial control environments |
| Package | DO-35 (glass axial) - compatible with standard 5 mm-pitch automatic insertion equipment |
Pinout & Package
Package: DO-35 glass axial package with cathode band marking. Leads are tinned and suitable for wave soldering or reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to higher potential side of regulated rail; reverse-biased during normal operation |
| 2 (Non-banded End) | Anode | Connected to circuit ground or lower potential reference node |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 40 Ω max at 5 mA - reduces output voltage variation under changing load current |
| Wide zener voltage range coverage | Part of HZS series spanning 1.5 V–38 V - allows single-source procurement across multiple voltage rails |
| High-temperature junction rating | 200°C max Tj - supports reliable operation in thermally constrained enclosures |
| Automated assembly compatibility | 5 mm lead pitch - enables high-throughput placement using standard pick-and-place and insertion machines |
Applications
| Microcontroller Reset Circuit | ADC Reference Voltage Source |
|---|---|
Use Scenario: Providing a stable 5.6 V reference to a reset supervisor IC monitoring a 5 V logic rail. IC Role / Device Role / Timing Role: Zener diode acts as precision shunt voltage reference defining reset threshold voltage. Use Value: Tight 5.5–5.8 V tolerance and low 40 Ω dynamic resistance ensure accurate, repeatable reset assertion across temperature and supply variance. | Use Scenario: Supplying a clean, low-noise reference to a 12-bit SAR ADC in a data acquisition module. IC Role / Device Role / Timing Role: Functions as a passive shunt reference, replacing more complex IC references where cost and board space are constrained. Use Value: ≤1 µA reverse leakage at 2 V minimizes reference loading error; 2.0 mV/°C tempco enables predictable calibration offset correction. |
| Industrial Sensor Signal Conditioning | Low-Power IoT Node Power Rail Clamp |
Use Scenario: Stabilizing excitation voltage for a 4–20 mA current-loop pressure transducer in a factory automation controller. IC Role / Device Role / Timing Role: Provides regulated bias voltage to op-amp circuitry driving the loop transmitter. Use Value: 400 mW power rating sustains operation under transient overvoltage events while maintaining <±0.3 V regulation accuracy. | Use Scenario: Clamping supply rail to 5.6 V in a coin-cell-powered BLE sensor node during RF transmit bursts. IC Role / Device Role / Timing Role: Acts as overvoltage protection and rail stabilizer during peak current draw. Use Value: Low 1 µA leakage preserves battery life; DO-35 package allows manual repair or replacement in field-deployed units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4734A | 5.6 V nominal, ±5% tolerance (5.32–5.88 V), 100 Ω rd, 1 W Pd | Higher power, looser voltage tolerance, larger DO-41 package | Preferred when higher surge energy handling is required; not suitable for space-constrained 5 mm-pitch assembly |
| BZX55-C5V6 | 5.6 V nominal, ±5% tolerance, 60 Ω rd, 500 mW Pd, DO-35 package | Slightly higher dynamic resistance and wider tolerance than HZS5.6NB1TD-P-E | Acceptable where tighter regulation is not critical; same footprint enables drop-in replacement on legacy boards |
Compared with 1N4734A and BZX55-C5V6, HZS5.6NB1TD-P-E delivers superior voltage accuracy (±0.3 V vs. ±5%), lower dynamic impedance (40 Ω vs. ≥60 Ω), and optimized manufacturability for high-volume 5 mm-pitch insertion-making it ideal for next-generation compact, precision-stabilized supplies.
Availability
HZS5.6NB1TD-P-E is available at Aetrix Electronics and suitable for microcontroller reset circuits, ADC reference sources, industrial sensor signal conditioning, and low-power IoT node power rail clamping requiring stable component supply and consistent parametric performance across production lots.
Supply support for HZS5.6NB1TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer electronics.
The HZS Series is engineered for high-precision, low-drift voltage stabilization in space-constrained and thermally demanding applications-targeting design-in where tight zener tolerance, low dynamic impedance, and automated assembly compatibility are critical.
FAQ
What is the exact zener voltage range specified for HZS5.6NB1TD-P-E?
The HZS5.6NB1TD-P-E has a guaranteed zener voltage range of 5.5 V minimum to 5.8 V maximum when tested at IZ = 5 mA and Ta = 25°C. This ±0.3 V tolerance is tighter than standard 5% Zener diodes and supports high-accuracy reference design without trimming.
Does HZS5.6NB1TD-P-E support automated PCB assembly?
Yes, HZS5.6NB1TD-P-E uses a DO-35 package with 5 mm lead pitch, explicitly qualified for high-speed automatic insertion per the HZS Series datasheet. Its axial lead geometry and tinned terminations meet IPC-A-610 standards for wave and selective soldering processes.
What is the maximum junction temperature rating for HZS5.6NB1TD-P-E?
HZS5.6NB1TD-P-E is rated for a maximum junction temperature of +200°C, enabling reliable operation in under-hood automotive, motor drive, and industrial control environments where ambient temperatures exceed 125°C and thermal derating must be minimized.
How does the dynamic resistance of HZS5.6NB1TD-P-E compare to common alternatives?
HZS5.6NB1TD-P-E specifies 40 Ω maximum dynamic resistance at 5 mA, significantly lower than the 60–100 Ω typical of BZX55-C5V6 or 1N4734A. This results in better line and load regulation-critical for precision analog circuits where output voltage stability directly impacts measurement fidelity.
Is HZS5.6NB1TD-P-E suitable for low-leakage applications like battery-powered sensors?
Yes-HZS5.6NB1TD-P-E guarantees reverse current ≤1 µA at VR = 2 V, making it well-suited for ultra-low-power applications such as coin-cell-powered IoT nodes or energy-harvesting sensor interfaces where standby current must remain below 10 µA.
HZS5.6NB1TD-P-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS5.6NB1TD-P-E FAQ
1.How can I place an order for HZS5.6NB1TD-P-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS5.6NB1TD-P-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS5.6NB1TD-P-E reliable?
The price and inventory of HZS5.6NB1TD-P-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS5.6NB1TD-P-E is usually 5 days.
3.What payment methods are accepted for HZS5.6NB1TD-P-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS5.6NB1TD-P-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS5.6NB1TD-P-E?
HZS5.6NB1TD-P-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS5.6NB1TD-P-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS5.6NB1TD-P-E?
For technical support, including HZS5.6NB1TD-P-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS5.6NB1TD-P-E requirements.
6.How does Aetrix verify that HZS5.6NB1TD-P-E is sourced from the original manufacturer or authorized distributors?
All HZS5.6NB1TD-P-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS5.6NB1TD-P-E meets industry standards.
7.What is the process for return or replacement of HZS5.6NB1TD-P-E?
All HZS5.6NB1TD-P-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS5.6NB1TD-P-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS5.6NB1TD-P-E part is unused and in its original packaging.
Return procedure for HZS5.6NB1TD-P-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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