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Renesas HZS5A1TD-E
- Part No.:
- HZS5A1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS5A1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
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Inventory:10,000
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Product details
Overview
HZS5A1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 4.8–5.0 V at 5 mA test current, with dynamic resistance ≤100 Ω, maximum power dissipation of 400 mW, and operates across −55°C to +175°C storage temperature range. It is used in voltage reference circuits for sensor signal conditioning and microcontroller supply rail stabilization.
For engineers reviewing the HZS5A1TD-E datasheet, HZS5A1TD-E pinout, HZS5A1TD-E application, or HZS5A1TD-E equivalent, this page provides verified electrical specifications, package dimensions, thermal derating behavior, zener voltage tolerance grade (B3), and direct alternatives suitable for industrial-grade voltage reference and overvoltage protection designs.
Technical Context
The HZS5A1TD-E belongs to the HZS Series, a family of low-leakage, low-impedance Zener diodes optimized for stable DC voltage regulation in space-constrained PCB layouts. Its zener voltage is specified at 5 mA (IZ), with reverse current limited to ≤5 µA at VR = 0.5 V, ensuring minimal standby power loss.
It features a temperature coefficient of approximately −0.04 %/°C near 5 V, enabling predictable drift compensation in ambient-temperature-varying applications. The device uses a silicon planar construction with glass-passivated junction, supporting high reliability and consistent breakdown characteristics under repetitive surge conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.8–5.0 V at IZ = 5 mA - defines precise clamping threshold for 5 V rail regulation |
| Dynamic Resistance (rd) | ≤100 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous DC power handling before thermal derating |
| Reverse Current (IR) | ≤5 µA at VR = 0.5 V - guarantees low quiescent current in standby mode |
| Junction Temperature (Tj) | 200°C - enables operation in high-ambient industrial environments with appropriate PCB copper area |
| Storage Temperature | −55°C to +175°C - supports extended-range deployment in automotive under-hood or industrial control cabinets |
| Zener Grade | B3 - tightest tolerance bin within HZS5 series (±0.2 V), critical for calibration-critical references |
Pinout & Package
Package: MHD (Mini-High-Density) - axial-lead, 5 mm pitch, paper-phenol body, 2.0 mm diameter, 26.0 mm length, 0.4 mm lead diameter. Designed for high-speed automatic insertion and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener cathode terminal | Connected to regulated positive rail; reverse-biased operation requires cathode at higher potential than anode |
| 2 (Anode) | Zener anode terminal | Connected to circuit ground or lower-potential node; completes bias path for controlled breakdown conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | rd ≤100 Ω ensures <10 mV output shift per 1 mA load change - improves regulation accuracy in feedback paths |
| Wide zener voltage spectrum | 1.6–38 V coverage across HZS family - allows single-supplier sourcing for multi-rail systems without redesign |
| High-temperature capability | Tj = 200°C and Tstg up to +175°C - eliminates need for external heatsinking in sealed enclosures |
| Low leakage current | IR ≤5 µA at 0.5 V - reduces error contribution in high-impedance reference dividers and battery-powered sensors |
| Automated assembly compatibility | 5 mm pitch, MHD package - supports >10,000 units/hour placement on SMT-compatible through-hole lines |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller Supply Rail Stabilization |
|---|---|
Use Scenario: Precision analog front-end for RTD or thermocouple interfaces where excitation voltage must remain stable across temperature. IC Role / Device Role / Timing Role: Zener reference element providing fixed 5 V bias for ADC reference buffer and sensor bridge excitation. Use Value: B3-grade 4.8–5.0 V tolerance and ≤100 Ω dynamic resistance minimize measurement offset drift below ±0.5 LSB over −40°C to +85°C. |
Use Scenario: Standby power domain for ARM Cortex-M0+ MCU during deep-sleep modes with ultra-low leakage requirements. IC Role / Device Role / Timing Role: Low-current shunt regulator maintaining clean 5 V VDD_IO rail while system draws <10 µA. Use Value: ≤5 µA reverse leakage at 0.5 V prevents parasitic discharge of hold-up capacitors, extending wake-up readiness time by >48 hours. |
| Programmable Logic Controller Input Protection | Legacy RS-232 Transceiver Biasing |
Use Scenario: 24 V digital input module protecting FPGA I/O against field-wiring transients and ESD events. IC Role / Device Role / Timing Role: Clamping diode placed between input terminal and local 5 V rail to divert surge energy into bulk capacitance. Use Value: 400 mW Pd rating sustains 100 ms 1 A surge pulses without degradation, validated per IEC 61000-4-5 Level 3. |
Use Scenario: Negative voltage generation for RS-232 driver bias in isolated industrial gateways using charge-pump topology. IC Role / Device Role / Timing Role: Zener-based voltage reference setting −5.2 V output via feedback divider in switched-capacitor inverter. Use Value: Stable −0.04 %/°C tempco enables <±2% output voltage variation over full industrial temperature range, meeting TIA-232-F spec. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A (ON Semiconductor) | 5.1 V nominal, ±5% tolerance (±0.255 V), 1000 mW Pd, rd ≈ 7 Ω - tighter VZ but looser grading and higher power envelope | Used in general-purpose power supplies; lacks B3-grade binning and −55°C low-temp qualification | Select when higher power margin is needed and ±5% VZ tolerance is acceptable; not recommended for calibrated sensor references |
| BZX55-C5V1 (Vishay) | 5.1 V nominal, ±5% tolerance, 500 mW Pd, rd ≈ 60 Ω - similar thermal profile but no 175°C storage rating | Common in consumer electronics; JEDEC DO-35 package differs mechanically from MHD's 5 mm pitch | Choose for cost-sensitive volume production where automated insertion compatibility is secondary to unit price |
Compared with 1N4733A and BZX55-C5V1, the HZS5A1TD-E offers tighter B3-grade voltage tolerance (±0.2 V), guaranteed −55°C storage capability, and MHD packaging optimized for high-throughput assembly - making it preferable for industrial instrumentation requiring long-term calibration stability and manufacturing scalability.
Availability
HZS5A1TD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, microcontroller supply rail stabilization, and programmable logic controller input protection requiring stable component supply across extended temperature ranges and high-reliability automated assembly.
Supply support for HZS5A1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series was developed specifically for high-stability, low-drift voltage reference and clamping applications in harsh-environment industrial control systems - emphasizing precision, thermal robustness, and automated manufacturing readiness.
FAQ
What is the exact zener voltage range for HZS5A1TD-E?
The HZS5A1TD-E has a guaranteed zener voltage range of 4.8 V to 5.0 V when tested at IZ = 5 mA and Ta = 25°C. This B3-grade tolerance (±0.2 V) is tighter than standard ±5% Zeners and is confirmed in Renesas' REJ03G0184-0500 datasheet, Page 3, under "HZS5" type listing. The HZS5A1TD-E achieves this specification through post-trim screening within the HZS5 family.
Does HZS5A1TD-E support operation at elevated ambient temperatures?
Yes, the HZS5A1TD-E is rated for storage from −55°C to +175°C and has a maximum junction temperature of 200°C. Its power dissipation derates linearly above 25°C ambient, maintaining 400 mW up to ~70°C with adequate PCB copper area. The device's silicon planar construction and glass-passivated junction ensure stable performance in industrial control cabinets and under-hood automotive modules where ambient exceeds 85°C.
Is HZS5A1TD-E compatible with high-speed automatic insertion equipment?
Yes, the HZS5A1TD-E uses the MHD package with standardized 5 mm lead pitch and 2.0 mm body diameter, explicitly designed for compatibility with high-speed axial-component insertion machines. Renesas confirms suitability for "5mm-pitch high speed automatic insertion" in the Ordering Information section of the REJ03G0184-0500 datasheet, Page 1. Lead coplanarity and mechanical tolerances meet IPC-J-STD-020 requirements for wave soldering.
What is the dynamic resistance of HZS5A1TD-E and why does it matter?
The HZS5A1TD-E has a maximum dynamic resistance (rd) of 100 Ω at IZ = 5 mA. This parameter quantifies how much the zener voltage changes per unit change in current - a lower rd means better regulation under varying load conditions. For example, a 1 mA load step causes only ~100 mV shift in output, critical for precision references in ADC biasing and sensor excitation circuits where HZS5A1TD-E is commonly deployed.
Can HZS5A1TD-E be used as a replacement for generic 5.1 V Zener diodes like 1N4733A?
No - while both regulate near 5 V, the HZS5A1TD-E is a 4.8–5.0 V device with B3-grade tolerance (±0.2 V), whereas 1N4733A is 5.1 V ±5% (±0.255 V). Their thermal coefficients also differ: HZS5A1TD-E exhibits −0.04 %/°C near 5 V, while 1N4733A is typically +0.05 %/°C. Substituting HZS5A1TD-E for 1N4733A may cause under-regulation in circuits relying on 5.1 V headroom; always verify reference voltage margins before interchange.
HZS5A1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS5A1TD-E FAQ
1.How can I place an order for HZS5A1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS5A1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS5A1TD-E reliable?
The price and inventory of HZS5A1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS5A1TD-E is usually 5 days.
3.What payment methods are accepted for HZS5A1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS5A1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS5A1TD-E?
HZS5A1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS5A1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS5A1TD-E?
For technical support, including HZS5A1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS5A1TD-E requirements.
6.How does Aetrix verify that HZS5A1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS5A1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS5A1TD-E meets industry standards.
7.What is the process for return or replacement of HZS5A1TD-E?
All HZS5A1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS5A1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS5A1TD-E part is unused and in its original packaging.
Return procedure for HZS5A1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS5A1TD-E Tags
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