Renesas HZS5B2TD-E
- Part No.:
- HZS5B2TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS5B2TD-E.pdf
- Description:
- DIODE ZENER 0.4W
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Inventory:27,500
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Product details
Overview
HZS5B2TD-E from Renesas Electronics is a silicon planar Zener diode designed for voltage regulation and stabilization in low-power DC supply rails, featuring a nominal zener voltage of 4.8–5.0 V at 5 mA test current, 400 mW power dissipation, and low dynamic impedance of ≤100 Ω - deployed in precision reference circuits and overvoltage protection for microcontroller I/O rails.
For engineers reviewing the HZS5B2TD-E datasheet, HZS5B2TD-E pinout, HZS5B2TD-E application, or HZS5B2TD-E equivalent, this device serves as a stable, low-leakage voltage reference in space-constrained industrial control modules, sensor signal conditioning stages, and embedded power monitor circuits where thermal stability and consistent breakdown behavior under varying load are critical selection criteria.
Technical Context
The HZS5B2TD-E operates as a two-terminal shunt regulator with a defined reverse-biased breakdown characteristic. Its zener voltage is specified at 4.8–5.0 V (Grade B2) with ±0.2 V tolerance, tested at IZ = 5 mA under DC conditions, and exhibits a temperature coefficient of approximately −0.04 %/°C near 5 V - indicating slight negative drift with rising junction temperature.
It uses a silicon planar construction with epoxy-molded MHD package (JEITA code GRZZ0002ZC-A), rated for Tj up to 200°C and Tstg from −55°C to +175°C. The device is not radiation-hardened and is classified as "Standard" quality grade per Renesas' product categorization, intended for office equipment, industrial robots, and communications hardware.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.8–5.0 V at IZ = 5 mA - defines stable regulation point for 5 V logic rail clamping or reference generation. |
| Power Dissipation (Pd) | 400 mW - sets maximum continuous power handling without derating above 25°C ambient. |
| Dynamic Resistance (rd) | ≤100 Ω at IZ = 5 mA - ensures minimal output voltage variation under small-signal load transients. |
| Reverse Leakage (IR) | ≤5 µA at VR = 0.5 V - guarantees low standby current in bias networks and high-impedance sensing paths. |
| Junction Temperature (Tj) | 200°C max - supports operation in thermally demanding environments such as enclosed motor drives or power supply feedback loops. |
| Package Type | MHD (JEITA GRZZ0002ZC-A) - 2-pin axial lead, 5 mm pitch, compatible with high-speed automatic insertion equipment. |
Pinout & Package
The HZS5B2TD-E is housed in an MHD package: a miniature epoxy-molded axial-leaded diode with cathode band marking, 2.0 mm diameter body, 26 mm lead length, and 5 mm lead pitch - optimized for through-hole PCB assembly and automated insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to regulated voltage node; reverse-biased during normal operation to maintain fixed VZ drop. |
| 2 (Anode) | Reference ground return | Typically tied to system ground or lower-potential rail; completes current path for zener conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | rd ≤100 Ω enables tight voltage regulation under dynamic load shifts in feedback networks. |
| Wide zener voltage range | Part of HZS Series spanning 1.6–38 V - allows standardized design reuse across multiple supply rails. |
| High-temperature junction rating | Tj = 200°C supports reliable operation in proximity to power semiconductors or in sealed enclosures. |
| Low leakage current | IR ≤5 µA at 0.5 V ensures negligible quiescent drain in battery-backed or ultra-low-power monitoring circuits. |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller I/O Protection |
|---|---|
Use Scenario: Stabilizing excitation voltage for resistive bridge sensors in PLC analog input modules. IC Role / Device Role / Timing Role: Shunt voltage reference providing precise 5 V bias to Wheatstone bridges, compensating for supply ripple. Use Value: Maintains <±0.5% measurement accuracy despite ±10% input rail fluctuation due to rd ≤100 Ω and low tempco. | Use Scenario: Clamping GPIO pins against ESD or transient overvoltage in factory-floor HMIs. IC Role / Device Role / Timing Role: Bidirectional transient suppressor (with series resistor) limiting pin voltage to 5.0 V max during fast-rising surges. Use Value: Prevents latch-up in 3.3 V/5 V MCUs by clamping within safe absolute maximum ratings using low-IR and fast turn-on. |
| Embedded Power Monitor Reference | Legacy 5 V Logic Rail Regulation |
Use Scenario: Providing stable reference for ADC-based supply voltage monitoring in network edge gateways. IC Role / Device Role / Timing Role: Precision voltage source for comparator threshold setting in brown-out detection circuits. Use Value: Enables repeatable 4.9 V trip point across −40°C to +85°C ambient via predictable γZ ≈ −0.04 %/°C. | Use Scenario: Regulating unregulated 7–12 V wall adapter outputs to clean 5 V for legacy peripherals. IC Role / Device Role / Timing Role: Simple shunt regulator with series dropping resistor, dissipating excess power as heat. Use Value: Delivers stable 5 V at ≤80 mA load with <2% line regulation, leveraging Pd = 400 mW and low rd. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A | 5.1 V nominal VZ, 1 W Pd, DO-41 package, ±5% tolerance | Higher power and looser tolerance; suited for general-purpose regulation where precision is secondary | Select when higher surge energy handling is required and 5.1 V vs. 4.9 V nominal is acceptable. |
| BZX55-C4V7 | 4.7 V nominal VZ, 500 mW Pd, DO-35 package, ±5% tolerance | Lower VZ, larger package footprint, wider tolerance - less suitable for tight-reference designs | Choose only if 4.7 V target aligns with circuit margin requirements and board layout permits DO-35 spacing. |
Compared with 1N4733A and BZX55-C4V7, the HZS5B2TD-E offers tighter 4.8–5.0 V tolerance (Grade B2), lower dynamic impedance, and MHD package compatibility with high-speed insertion - making it preferable for compact, precision-stable 5 V reference applications in industrial automation hardware.
Availability
HZS5B2TD-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller protection circuits, and embedded power monitor systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for HZS5B2TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and communications markets.
The HZS Series belongs to Renesas' discrete diode product line, engineered specifically for stabilized DC power supply applications - emphasizing low leakage, tight voltage tolerance, and thermal robustness in cost-sensitive, high-volume industrial electronics.
FAQ
What is the exact zener voltage range for HZS5B2TD-E?
The HZS5B2TD-E has a guaranteed zener voltage range of 4.8 V to 5.0 V when tested at IZ = 5 mA and Ta = 25°C, corresponding to Grade B2 within the HZS5 family. This 0.2 V window reflects tight process control for applications requiring stable 5 V references without external trimming. The HZS5B2TD-E maintains this specification across its qualified operating temperature range.
Does HZS5B2TD-E support surface-mount assembly?
No, the HZS5B2TD-E uses the MHD package - a through-hole, axial-leaded configuration with 5 mm lead pitch and 26 mm lead length - designed explicitly for wave soldering and high-speed automatic insertion equipment. It is not compatible with reflow or pick-and-place SMT processes. For SMT alternatives, Renesas offers other series such as the UDZS, but HZS5B2TD-E itself is through-hole only.
What is the maximum reverse leakage current for HZS5B2TD-E?
The maximum reverse leakage current (IR) for HZS5B2TD-E is 5 µA, measured at VR = 0.5 V and Ta = 25°C. This low leakage ensures minimal parasitic loading in high-impedance reference divider networks and battery-powered monitoring circuits. The HZS5B2TD-E maintains this performance across its full storage temperature range of −55°C to +175°C.
Can HZS5B2TD-E be used in automotive applications?
The HZS5B2TD-E is classified as a "Standard" quality grade device per Renesas documentation and is not qualified for automotive use. It lacks AEC-Q101 stress testing, extended temperature validation beyond −55°C to +175°C storage, or PPAP documentation. For automotive-grade Zener diodes, Renesas offers separate qualified parts - the HZS5B2TD-E is intended for office equipment, industrial robots, and communications gear per its official application scope.
What is the thermal resistance junction-to-ambient for HZS5B2TD-E?
Renesas does not publish a specific RθJA value for the HZS5B2TD-E in the HZS Series datasheet (REJ03G0184-0500). However, Figure 3 shows power dissipation derating: Pd drops linearly from 400 mW at 25°C ambient to 0 mW at ~125°C ambient on a standard FR-4 PCB with typical copper land patterns. Designers must apply empirical layout rules - such as ≥100 mm² copper pour per lead - to achieve published thermal performance. The HZS5B2TD-E's 200°C maximum junction temperature remains valid regardless of ambient.
HZS5B2TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS5B2TD-E FAQ
1.How can I place an order for HZS5B2TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS5B2TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS5B2TD-E reliable?
The price and inventory of HZS5B2TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS5B2TD-E is usually 5 days.
3.What payment methods are accepted for HZS5B2TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS5B2TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS5B2TD-E?
HZS5B2TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS5B2TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS5B2TD-E?
For technical support, including HZS5B2TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS5B2TD-E requirements.
6.How does Aetrix verify that HZS5B2TD-E is sourced from the original manufacturer or authorized distributors?
All HZS5B2TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS5B2TD-E meets industry standards.
7.What is the process for return or replacement of HZS5B2TD-E?
All HZS5B2TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS5B2TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS5B2TD-E part is unused and in its original packaging.
Return procedure for HZS5B2TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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